HY AA16-9DIL18

AA16-9 DIL18
16 Element
Avalanche Photodiode Array
Special characteristics:
quantum efficiency >80% at λ 760-910 nm
high speed, low noise
good uniformity between elements
low cross talk
AA16-9 DIL18
no. of Elements
Active Area / Element
[µm]
Gap / Separation
[µm]
Pitch
[µm]
Spectral Range
Spectral Responsivity 1)
(at 905 nm, M = 100)
16
648 * 208
320
450 … 1050
min. 55 A/W
typ. 60 A/W
15 14 13
1
2
4
3
12
11
10
5
6
7
8
9
22.8
1.5
typ. 100
typ. 5 nA
window
2.2
0.7
typ. 2 pF
7.1
100 … 300 V
typ. 2 ns
2.54
typ. 50 dB
± 20 %
typ. ± 5 %
± 20 %
typ. ± 5 %
-20 ... +70 °C
-60 ... +100 °C
Increase the photo current up to 100 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
www.silicon-sensor.com
17 16
112
1) measurement conditions:
Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED
(880 nm, 80 nm bandwith).
Version: 06-03-03
Specification before: AD-LA-16-9-DIL 18
Order Number: 500038
18
7.62
Max. Gain
(Ipo= 1nA)
Dark Current 1)
(M = 100)
Capacitance 1)/Element
(M=100)
Breakdown Voltage UBR
(at ID = 2 µA)
Rise Time
at 905 nm, 50 Ω
Cross-talk
(at 905 nm)
Photo Current Uniformity
(at M= 50)
Dark Current Uniformity
(at M= 50)
Operating Temperature
Storage Temperature
Package DIL18:
7.5
Parameters:
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Function
Element
1
Element
3
Element
5
Element
7
Element
9
Element
11
Element
13
Element
15
Guard Ring
Element
16
Element
14
Element
12
Element
10
Common Anode
Element
8
Element
6
Element
4
Element
2
www.pacific-sensor.com
Spectral Responsivity at M = 1
Spectral Responsivity at M = 100
series - 9
0,700
7 0 ,0 0
0,600
6 0 ,0 0
0,500
5 0 ,0 0
Responsivity (AW)
Responsivity (A/W)
series - 9
0,400
0,300
0,200
0,100
4 0 ,0 0
3 0 ,0 0
2 0 ,0 0
1 0 ,0 0
0,000
0 ,0 0
400
500
600
700
800
900
1000
1100
400
500
600
700
W avelength (nm)
800
900
1000
1100
W a v e le ngth (nm)
Quantum Efficiency for M = 100
series - 9
1 0 0 ,0
9 0 ,0
8 0 ,0
7 0 ,0
QE
6 0 ,0
5 0 ,0
4 0 ,0
3 0 ,0
2 0 ,0
1 0 ,0
0 ,0
400
500
600
700
800
900
1000
1100
W a v e le ngth (nm)
Example of DC-Operating Circuit:
16x Transimpedance Amplifier
Maximum Ratings:
ƒ
ƒ
ƒ
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
ƒ
( Pelectr. = Popt. * Sabs * M * UR )
400 mW at 22°C
200 mW for 1 s
IPh (DC) ≤ 250 µA
≤ 1 mA for signal 50 µs "on" / 1 ms "off"
Out 1
Diode, protective circuit
Application Hints:
ƒ
ƒ
ƒ
ƒ
Current should be limited by a protecting resistor or current limiting IC inside the power supply.
Use of low noise read-out - IC.
For high gain applications bias voltage should be temperature compensated.
For low light level applications, blocking of ambient light should be used.
Out 16
C1 C2 C3
C16 GR
AD-LA-16-9
Common Anode
R
-UR
Handling Precautions:
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
min. Pin - length
2 mm
ESD - protection
Standard precautionary measures are sufficient.
Storage
Store devices in conductive foam.
Avoid skin contact with window!
Clean window with Ethyl alcohol if necessary.
Do not scratch or abrade window.
Silicon Sensor GmbH
Ostendstr. 1
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax:
+49 (0)30-63 99 23 33
E-Mail: [email protected]
Deutschland:
Inselkammerstraße 10
D-82008 Unterhaching
Tel: 089 614 503-10
E-Mail: [email protected]
URL: www.hy-line.de
Schweiz:
Gründenstraße 82
CH-8247 Flurlingen
Tel.: 052 647 42 00
E-Mail: [email protected]
URL: www.hy-line.ch