AME AME8861 n General Description The AME8861 family of positive, linear regulators feature low quiescent current (30µA typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-25 package is attractive for "Pocket" and "Hand Held" applications. These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the "Worst" of operating conditions. 600mA CMOS LDO n Functional Block Diagram IN OUT Overcurrent Shutdown Thermal Shutdown EN BYP R1 www.microchip.com In applications requiring a low noise, regulated supply, place a 1000 pF capacitor between Bypass and ground. AMP The AME8861 is stable with an output capacitance of 2.2µF or greater. R2 Vref =1.215V n Features GND l Very Low Dropout Voltage l 600mA Output l Accurate to within 1.5% l 30µA Quiescent Current n Typical Application l Over-Temperature Shutdown l Current Limiting INPUT IN l Short Circuit Current Fold-back BYP l Power-Saving Shutdown Mode l Factory Pre-set Output Voltages OUTPUT AME8861 l Noise Reduction Bypass Capacitor l Space-Saving SOT- 25 Package OUT GND EN C1 C2 C3 1µF 1000pF 2.2µF 5V l Low Temperature Coefficient l All AME's Lead Free Products Meet RoHS Standards n Applications l Instrumentation l Portable Electronics l Wireless Devices l Cordless Phones l PC Peripherals l Battery Powered Widgets l Electronic Scales Rev.E.05 1 AME AME8861 600mA CMOS LDO n Pin Configuration SOT-25 Top View 5 4 AME8861 1. IN 2. GND AME8861 3. EN 4. BYP 5. OUT 1 2 3 * Die Attach: Conductive Epoxy n Ordering Information AME8861 x x x x x x Special Feature Voltage Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration A: 1. IN 2. GND (TSOT-25) 3. EN 4. BYP 5. OUT (SOT-25) 2 Operating Ambient Number Temperature Package Type of Range Pins E: -40OC to +85OC E: SOT-2X V: 5 Output Voltage 180: 250: 300: 330: V=1.8V V=2.5V V=3.0V V=3.3V Special Feature L: Low Profile Y: Lead Free & Low Profile Z: Lead Free Rev.E.05 AME AME8861 600mA CMOS LDO n Ordering Information (contd.) Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME8861AEEV180Y BFNww 1.8V TSOT-25 - 40oC to + 85oC AME8861AEEV180Z BFNww 1.8V SOT-25 - 40oC to + 85oC AME8861AEEV250 AXCww 2.5V SOT-25 - 40oC to + 85oC AME8861AEEV250L AXCww www.microchip.com 2.5V TSOT-25 - 40oC to + 85oC AME8861AEEV250Y AXCww 2.5V TSOT-25 - 40oC to + 85oC AME8861AEEV250Z AXCww 2.5V SOT-25 - 40oC to + 85oC AME8861AEEV300 AWGww 3.0V SOT-25 - 40oC to + 85oC AME8861AEEV300L AWGww 3.0V TSOT-25 - 40oC to + 85oC AME8861AEEV300Y AWGww 3.0V TSOT-25 - 40oC to + 85oC AME8861AEEV300Z AWGww 3.0V SOT-25 - 40oC to + 85oC AME8861AEEV330 AXBww 3.3V SOT-25 - 40oC to + 85oC AME8861AEEV330L AXBww 3.3V TSOT-25 - 40oC to + 85oC AME8861AEEV330Y AXBww 3.3V TSOT-25 - 40oC to + 85oC AME8861AEEV330Z AXBww 3.3V SOT-25 - 40oC to + 85oC Note: ww represents the date code and pls refer to date Code Rule before Package Dimension. * A line on top of the first character represents lead free plating such as BFNww. Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type. Rev.E.05 3 AME AME8861 600mA CMOS LDO n Absolute Maximum Ratings Parameter Maximum Unit 8 V PD / (V IN - VO) A GND - 0.3 to VIN + 0.3 V Input Voltage Output Current Input, Output Voltage B* ESD Classification Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V n Recommended Operating Conditions Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 o C Junction Temperature Range TJ - 40 to +125 o C Storage Temperature Range TSTG - 65 to +150 o C n Thermal Information Parameter Package Die Attach Thermal Resistance* ( Junction to Case) Symbol Maximum θJC 81 Unit o C/W Thermal Resistance ( Junction to Ambient) SOT-25 Conductive Epoxy Internal Power Dissipation θJA 260 PD 400 mW Maximum Junction Temperature 150 o Solder Iron (10 Sec)** 350 o C C * Measure θJC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F 4 Rev.E.05 AME AME8861 600mA CMOS LDO n Electrical Specifications TA = 25OC unless otherwise noted. Parameter Symbol Input Voltage VIN Output Voltage Accuracy VO Dropout Voltage VDROPOUT Test Condition IO=1mA IO=600mA Min Typ Max Units Note 1 7 V -1.5 1.5 % 1.3V<VO(NOM)<=1.4V 1900 1.4V<VO(NOM)<=2.0V See 1400 chart 800 VO=VO(NOM) -2.0% 2.0V<VO(NOM)<=2.8V www.microchip.com 2.8V<VO(NOM) Output Current mV 600 IO VO>1.2V 600 Current Limit ILIM VO>1.2V 600 Short Circuit Current ISC VO<0.8V 300 600 mA Quiescent Current IQ IO=0mA 30 50 µA Ground Pin Current IGND IO=1mA to 600mA 35 Line Regulation Load Regulation Over Temperature Shutdown Over Temperature Hysterisis VO Temperature Coefficient Power Supply Rejection Output Voltage Noise REGLINE REGLOAD mA 800 mA µA 1.3V<=VO<=1.4V -0.2 0.2 IO=1mA 1.4V<VO <=2.0V -0.15 0.15 VIN =VO+1 to VO+2 2.0V<VO< 4.0V -0.1 0.02 0.1 VO>=4.0V -0.4 0.2 0.4 0.2 1 IO=1mA to 600mA % % 150 o C OTH 30 o C TC 30 OTS PSRR eN IO=100mA f=1kHz 75 CO=2.2µF ceramic f=10kHz 55 CBYP=0.01µF f=100kHz 30 f=10Hz to 100kHz IO=10mA, Co=2.2µF 30 ppm/oC dB µVrms CBYP=0.01µF Rev.E.05 5 AME AME8861 600mA CMOS LDO n Electrical Specifications (contd.) Parameter Symbol Test Condition Min VEH VIN =2.7V to 7V VEL VIN =2.7V to 7V IEH Max Units 2.0 Vin V 0 0.4 V VEN =V IN , VIN =2.7V to 7V 0.1 µA IEL VEN =0V, VIN =2.7V to 7V 0.5 µA Shutdown Supply Current ISD VIN =5V, V O=0V, VEN <V EL 1 µA PG Leakage Current ILC VPG=7V 1 µA EN Input Threshold EN Input Bias Current Typ 0.5 Note1: V IN(MIN)=VOUT+VDROPOUT Note2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. 6 Rev.E.05 AME AME8861 n Detailed Description The AME8861 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, and thermal shutdown. 600mA CMOS LDO All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection. n Enable The P-channel pass transistor receives data from the The Enable pin normally floats high. When actively, error amplifier, over-current shutdown, and thermal propulled low, the PMOS pass transistor shuts off, and all tection circuits. During normal operation, the error ampliinternal circuits are powered down. In this state, the quifier compares the output voltage to a precision reference. escent current is less than 1µA. This pin behaves much Over-current and Thermal shutdown circuits become aclike an electronic switch. tive when the junction temperature exceeds 150oC, or the current exceeds 600mA. During thermalwww.microchip.com shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. The AME8861 switches from voltage mode to current mode when the load exceeds the rated output current. This prevents over-stress. The AME8861 also incorporates current foldback to reduce power dissipation when the output is short circuited. This feature becomes active when the output drops below 0.8 volts, and reduces the current flow by 65%. Full current is restored when the voltage exceeds 0.8 volts. n External Capacitors The AME8861 is stable with an output capacitor to ground of 2.2µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect. A third capacitor can be connected between the BYPASS pin and GND. This capacitor can be a low cost Polyester Film variety between the value of 0.001 ~ 0.01µF. A larger capacitor improves the AC ripple rejection, but also makes the output come up slowly. This "Soft" turn-on is desirable in some applications to limit turn-on surges. Rev.E.05 7 AME AME8861 600mA CMOS LDO n Characterization Curve Ground Current vs. Input Voltage Load Step (1mA-600mA) Vo(10mV/DIV) 45 40 85 OC Ground Current (µ A) 35 30 Output C L=2.2µF CIN=2.2µF 25 O 25 C IL(200mA/DIV) 20 15 10 5 I Load 0 0 0 1 2 3 4 5 6 7 8 TIME ( 20mS/DIV) Input Voltage (V) Drop Out Voltage vs. Output Voltage Power Supply Rejection Ratio 0 1200 ILOAD=600mA 800 600 400 100mA CL=2.2µF Tantalum C BYP=0 -20 PSRR (dB) Drop Out Voltage (mV) -10 1000 -30 -40 -50 10mA 100mA -60 200 -70 100 µ A 100 µ A 1mA -80 0 1 2 3 4 5 10 6 1K 100K 10M Frequency (Hz) Output Voltage (V) Safe Operating Area Power Supply Rejection Ratio -20 100mA 600 PSRR (dB) Output Current (mA) -30 SOT-2X 100 1mA -40 -50 100mA -60 -70 10 0.1 1.0 8.0 Input-Output Voltage Differential (V) 8 C L=2.2µF Tantalum CBYP=1000pF -80 10 10mA 100µA 100µA 1K 100K 10M Frequency (Hz) Rev.E.05 AME AME8861 600mA CMOS LDO n Characterization Curve Overtemperature Shutdown I OUT (200mA/DIV) Vo (1mV DIV) Noise Measurement 0 R LOAD=6.6 Ω VOUT (1V/DIV) C L=2.2µF No Filter www.microchip.com 0 TIME (20ms/DIV) TIME (0.5Sec/DIV) Short Circuit Response C LOAD =2.2µF C IN=1.0µF RLOAD=3.3Ω VOUTNOM =3.3V TIME (2mS/DIV) TIME (2mS/DIV) Rev.E.05 C L=2µF R L=10Ω 0 0 VIN(1V/DIV) Line Transient Response VOUT (10mV/DIV) Output (1V/DIV) Enable (2V/DIV) Chip Enable Transient Response TIME ( 1mS/DIV) C LOAD=2.2µF C IN=1µF R LOAD <100mΩ VOU T (1V/DIV) IOUT (200mA/DIV) VOUT (1V/DIV) IOUT (200mV/DIV) Current Limit Response C LOAD=2.2µF ILOAD =1mA VOUTDC=3.3V VINDC=4.5V TIME (200mS/DIV) 9 AME AME8861 600mA CMOS LDO n Date Code Rule Marking Date Code Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 n Tape and Reel Dimension SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size 10 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm Rev.E.05 AME AME8861 600mA CMOS LDO n Tape and Reel Dimension TSOT-25 P W www.microchip.com AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Rev.E.05 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size TSOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm 11 AME AME8861 600mA CMOS LDO n Package Dimension SOT-25 Top View Side View SYMBOLS D MILLIMETERS MIN θ1 1.20REF E H A L S1 0.0472REF 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC 2.60 θ1 S1 0.07480 BSC 3.00 0.37BSC L 0 o 10 0.10236 0.11811 0.0146BSC o 0o 10o 0.95BSC 0.0374BSC MILLIMETERS INCHES A1 A MAX 0.00 H Front View MIN A1 e e MAX INCHES b TSOT-25 Top View Side View D E H θ1 L S1 SYMBOLS MIN MAX MIN MAX A+A1 0.90 1.25 0.0354 0.0492 b 0.30 0.50 0.0118 0.0197 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 e H e L θ1 b 12 S1 2.40 3.00 0.35BSC 0o 10o 0.95BSC 0.07480 BSC 0.09449 0.11811 0.0138BSC 0o 10o 0.0374BSC A1 A Front View 1.90 BSC Rev.E.05 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , November 2008 Document: 2006/2095-DS8861-E.05 Corporate Headquarter AME, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District Taipei 114, Taiwan. Tel: 886 2 2627-8687 Fax: 886 2 2659-2989