AP05FN50I
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast trr Performance
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
500V
RDS(ON)
1.8Ω
ID
4.4A
S
Description
AP05FN50 series are specially designed as main switching devices
for universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
4.4
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
2.7
A
18
A
31.3
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201211273
AP05FN50I
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
500
-
-
V
VGS=10V, ID=2.7A
-
-
1.8
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=500V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
Qg
Total Gate Charge
ID=1A
-
20
32
nC
Qgs
Gate-Source Charge
VDS=400V
-
3.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.5
-
nC
td(on)
Turn-on Delay Time
VDD=250V
-
9
-
ns
tr
Rise Time
ID=3.1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=12Ω
-
36
-
ns
tf
Fall Time
VGS=10V
-
13.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
900
1440
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
5
Ω
Min.
Typ.
IS=4.5A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=3.1A, VGS=0V,
-
75
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
185
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP05FN50I
5
8
ID , Drain Current (A)
6
4
10V
7 .0V
5 .0 V
V G = 4.0V
T C =150 o C
4
ID , Drain Current (A)
10V
8.0V
7.0V
6.0V
V G =5.0V
o
T C =25 C
3
2
2
1
0
0
0
4
8
12
16
20
0
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =2.7A
V G =10V
Normalized RDS(ON)
Normalized BVDSS
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
10
1.5
IS (A)
T j = 150 o C
Normalized VGS(th)
8
o
T j = 25 C
6
4
1
0.5
2
0
0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP05FN50I
f=1.0MHz
12
1600
V DS =250V
V DS =300V
V DS =400V
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
I D =1A
10
6
C iss
800
4
400
2
C oss
C rss
0
0
0
10
20
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
DC
T c =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4