AP18N20AGS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic 200V RDS(ON) 170mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 18A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Rating Units VDS Symbol Drain-Source Voltage 200 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 18 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 9.5 A 60 A 89 W Parameter 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation 3.13 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice Value Units 1.4 ℃/W 40 ℃/W 1 201011091 AP18N20AGS-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Units 200 - - V VGS=10V, ID=8A - - 170 mΩ VGS=4.5V, ID=5A - - 180 mΩ V VGS=0V, ID=250uA 2 Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 gfs Forward Transconductance VDS=10V, ID=8A - 25 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA 2 Qg Total Gate Charge ID=8A - 18 29 nC Qgs Gate-Source Charge VDS=160V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 8.5 - nC 2 td(on) Turn-on Delay Time VDD=100V - 8 - ns tr Rise Time ID=8A - 13 - ns td(off) Turn-off Delay Time RG=10Ω - 72 - ns tf Fall Time VGS=10V - 37 - ns Ciss Input Capacitance VGS=0V - 1600 2560 pF Coss Output Capacitance VDS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Min. Typ. Max. Units IS=10A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions trr Reverse Recovery Time IS=8A, VGS=0V - 160 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1260 - nC Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18N20AGS-HF 30 40 o 10V 8.0V 7.0V 6.0V V G = 5.0V 30 o 10V 8.0V 7.0V 6.0V V G =5.0V T C = 150 C ID , Drain Current (A) ID , Drain Current (A) T C = 25 C 20 20 10 10 0 0 0 4 8 12 0 16 4 Fig 1. Typical Output Characteristics 12 16 20 Fig 2. Typical Output Characteristics 2.8 132 I D =8A T C =25 o C I D =8A V G =10V 2.4 Normalized RDS(ON) 130 RDS(ON) (mΩ) 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 128 126 2.0 1.6 124 1.2 122 0.8 0.4 120 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 I D =250uA Normalized VGS(th) (V) 1.6 IS(A) 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18N20AGS-HF f=1.0MHz 10 2400 2000 8 C iss 1600 C (pF) VGS , Gate to Source Voltage (V) I D = 8A V DS =160V 6 1200 4 800 2 400 C oss C rss 0 0 0 10 20 30 1 40 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 Operation in this area limited by RDS(ON) 100us ID (A) 10 1ms 10ms 100ms DC 1 o T c =25 C Single Pulse DUTY=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C SINGLE PULSE 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4