Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 General Description Features The AP4301 is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. Op Amp · Input Offset Voltage: 0.5mV · Supply Current: 250µA per Op-Amp at 5.0V Supply Voltage · Unity Gain Bandwidth: 1MHz · Output Voltage Swing: 0 to (VCC-1.5)V The device contains two operational amplifiers and a precision shunt regulator. Op Amp 1 is designed for voltage control, whose non-inverting input internally connects to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. · Power Supply Range: 3 to 18V Voltage Reference · Fixed Output Voltage Reference: 1.25V, 1.24V · Voltage Tolerance: 0.5%, 1% · Sink Current Capability from 0.1 to 80mA The AP4301 is available in standard packages of DIP8 and SOIC-8. Applications · · SOIC-8 Battery Charger Switching Power Supply DIP-8 Figure 1. Package Types of AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ / VKA 3 6 INPUT 2- GND 4 5 INPUT 2+ Top View Figure 2. Pin Configuration of AP4301 Functional Block Diagram OUTPUT 1 1 - 8 VCC 7 OUTPUT 2 + 2 INPUT 1 + 3 6 INPUT 2 GND 4 5 Figure 3. Functional Block Diagram of AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Functional Block Diagram (Continued) VCC 6µA 4µA 100µA Q5 Q6 Q2 INPUT- Q3 Cc Q7 Q4 Q1 Rsc OUTPUT INPUT+ Q11 Q10 Q8 Q13 Q12 Q9 50µA Figure 4. Op Amp Functional Block Diagram (Each Amplifier) VKA 20µA 20µA GND Figure 5. Voltage Reference Functional Block Diagram Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Ordering Information AP4301 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Voltage Tolerance A: 0.5% B: 1% Package M: SOIC-8 P: DIP-8 Package Reference Voltage Voltage Tolerance 1.25V DIP-8 1.24V Temperature Range Output Voltage Reference C: 1.25V D: 1.24V Part Number Marking ID Tin Lead Lead Free 0.5% AP4301AP-C 1% AP4301BP-C 0.5% -40 to 85oC 1% 0.5% Tin Lead Lead Free AP4301AP-CE1 AP4301AP-C AP4301AP-CE1 AP4301BP-CE1 AP4301BP-C AP4301BP-CE1 AP4301AP-D AP4301AP-DE1 AP4301AP-D AP4301AP-DE1 AP4301BP-D AP4301BP-DE1 AP4301BP-D AP4301BP-DE1 AP4301AM-C AP4301AM-CE1 AP4301AM-C AP4301AM-CE1 AP4301AM-CTR AP4301AM-CTRE1 AP4301AM-C AP4301AM-CE1 1.25V AP4301BM-C 1% -40 to 85oC SOIC-8 AP4301BM-CE1 AP4301BM-CTR AP4301BM-CTRE1 AP4301BM-C AP4301BM-CE1 AP4301AM-D 0.5% 1.24V AP4301AM-DE1 AP4301AM-D AP4301AM-DE1 AP4301AM-DTR AP4301AM-DTRE1 AP4301AM-D AP4301AM-DE1 AP4301BM-D 1% AP4301BM-C AP4301BM-CE1 AP4301BM-DE1 Packing Type Tube Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel AP4301BM-D AP4301BM-DE1 Tube AP4301BM-DTR AP4301BM-DTRE1 AP4301BM-D AP4301BM-DE1 Tape/ Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage (VCC to GND) VCC 20 V Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) VIN -0.3 to VCC+0.3 V Op Amp 2 Input Differential Voltage (Pins 5, 6) VID 20 V IK 100 mA Voltage Reference Cathode Current (Pin 3) Power Dissipation PD Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) DIP-8 800 SOIC-8 500 mW TJ 150 o TSTG -65 to 150 o TL 260 o C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Temperature Jul. 2006 Rev. 1. 2 Min Max Unit 3 18 V -40 85 o C BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Electrical Characteristics Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Total Supply Current, Excluding Current in Voltage Reference Min Typ Max VCC=5V, no load, -40oC≤TA≤85oC 0.5 0.8 VCC=18V, no load, -40oC≤TA≤85oC 0.6 1.2 Unit mA Voltage Reference Section Refeence Voltage for AP4301-C Reference Voltage for AP4301-D IK=10mA 0.5% tolerance TA=25oC 1% tolerance 1.237 IK=10mA 0.5% tolerance 1.234 TA=25oC 1% tolerance 1.244 V 1.263 1.246 1.240 1.227 Reference Voltage Deviation over Full I =10mA, T =-40 to 85oC K A Temperature Range Minimum Cathode Current for Regulation Dynamic Impedance 1.256 1.250 IK=1.0 to 80mA, f<1kHz V 1.252 5 17 mV 0.2 1 mA 0.2 0.5 Ω 0.5 3 Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) TA=25oC Input Offset Voltage mV 5 TA=-40 to 85oC µV/oC 7 Input Offset Voltage Temperature Drift TA=-40 to 85oC Input Bias Current (Inverting Input Only) TA=25oC Large Signal Voltage Gain VCC=15V, RL=2KΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio VCC=5 to 18V 70 90 dB Source VCC=15V, VID=1V, VO=2V 20 40 mA Sink VCC=15V, VID=-1V, VO=2V 10 20 mA Output Voltage Swing (High) VCC=18V, RL=10KΩ, VID=1V 16 16.5 V Output Voltage Swing (Low) VCC=18V, RL=10KΩ, VID=-1V Slew Rate VCC=18V, RL=2kΩ, AV=1, VIN=0.5 to 2V, CL=100pF 0.2 0.5 V/µ s Gain Bandwidth Product VCC=18V, RL=2kΩ, CL=100pF, VIN=10mV, f=100kHz 0.7 1 MHz 20 150 nA Output Current Jul. 2006 Rev. 1. 2 17 100 mV BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Electrical Characteristics (Continued) Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max 0.5 3 Unit Op Amp2 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) TA=25oC mV Input Offset Voltage 5 TA=-40 to 85oC µV/oC Input Offset Voltage Temperature Drift TA=-40 to 85oC 7 Input Offset Current TA=25oC 2 30 nA Input Bias Current TA=25oC 20 150 nA Input Voltage Range VCC=0 to 18V 0 VCC-1.5 V Common Mode Rejection Ratio TA=25oC, VCM=0 to 3.5V 70 85 dB Large Signal Voltage Gain VCC=15V, RL=2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio VCC=5 to 18V 70 90 dΒ Source VCC=15V, VID=1V, VO=2V 20 40 mA Sink VCC=15V, VID=-1V, VO=2V 10 20 mA Output Voltage Swing (High) VCC=18V, RL=10kΩ, VID=1V 16 16.5 V Output Voltage SWing (Low) VCC=18V, RL=10kΩ, VID=-1V Slew Rate VCC=18V, RL=2kΩ, AV=1, VIN=0.5 to 2V, CL=100pF 0.2 0.5 V/µ s Gain Bandwidth Product VCC=18V, RL=2kΩ, CL=100pF, VIN=10mV, f=100kHz 0.7 1 MHz Output Current Jul. 2006 Rev. 1. 2 17 100 mV BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Typical Performance Characteristics 1.244 1.254 AP4301-D Reference Voltage (V) Reference Voltage (V) 1.242 1.252 AP4301-C 1.250 1.248 1.238 1.236 1.234 1.232 1.246 -40 1.240 -20 0 20 40 60 80 100 1.230 -40 120 o 0 20 40 60 80 100 120 Amibient Temperature ( C) Figure 6. Reference Voltage vs. Ambient Temperature Figure 7. Reference Voltage vs. Ambient Temperature 150 150 100 100 AP4301-C VKA=VREF Cathode Current (mA) Cathode Current (mA) -20 o Amibient Temperature ( C) o 50 TA=25 C 0 -50 AP4301-D VKA=VREF o TA=25 C 50 0 -50 -100 -100 -150 -150 -1 0 -1 1 0 1 Cathode Voltage (V) Cathode Voltage (V) Figure 8. Cathode Current vs. Cathode Voltage Figure 9. Cathode Current vs. Cathode Voltage Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Typical Performance Characteristics (Continued) 110 30 100 Voltage Gain(dB) Input Bias Current (nA) 25 20 15 10 80 RL=2KΩ RL=20KΩ 70 5 0 -40 90 60 -20 0 20 40 60 80 100 120 0 o 2 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Ambient Temperature ( C) Figure10. Input Bias Current vs. Ambient Temperature Figure 11. Op Amp Voltage Gain Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Typical Application R1 R6 Opto Isolator AC Line Battery Pack Op Amp 2 SMPS + R4 R3 Current R2 Sense R7 R5 Op Amp 2 + R8 AP4301 Figure 12. Application of AP4301 in a Constant Current and Constant Voltage Charger Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 11 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 12 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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