ETC HWD4558M

Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
General Description
Features
The HWD4558 consists of two high performance opera- · Internal frequency compensation
tional amplifiers. The IC features high gain, high input · Large DC voltage gain with 100 dB typical
resistance, excellent channel separation, wide range of · High input resistance with 5MΩ typical
operating voltage and internal frequency compensa· Low input noise voltage with 10nV/ HZ
tion. It is specifically suitable for applications in differential-in, differential-out as well as in potential-metric · Maximum power supply voltages: ± 18V
amplifiers and where gain and phase matched channels · Compatible with NJM 4558
are mandatory. The HWD4558 contains ± 18Vmaximum
power supply voltage.
Applications
The HWD558 is available in DIP-8 or SOIC-8 package. ·
·
Audio AC-3 decoded system
Audio amplifier
Pin Configuration
SOIC-8/DIP-8
SOIC-8
OUTPUT 1
1
8
VCC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+
3
6
INPUT 2-
VEE
4
5
INPUT 2+
DIP-8
Top View
Figure 2. Pin Configuration of HWD4558
Figure 1. Package Types of HWD4558
Functional Block Diagram
3.1 KΩ
V CC
- Input
150 Ω
+ Input
25 Ω
Output
25 Ω
10pF
7.1 KΩ
87pF
7.1
KΩ
480 Ω
4.2 KΩ
36 KΩ
V EE
Figure 3. Representative Schematic Diagram of HWD4558 (Each amplifier)
Issue Date: Jan. 2003
1
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Ordering Information
Package
SOIC-8
DIP-8
Temperature Range
Part Number
-40 to 85oC
Marking ID
Packing Type
HWD4558M
4558M
Tube, Reel
HWD4558P
HWD4558P
Tube
Absolute Maximum Ratings
Parameter
Symbol
Value
VCC
+ 18
VEE
- 18
Differential Input Voltage
VID
± 30
V
Input Voltage
VIC
± 15
V
Power Dissipation
PD
Operating Temperature Range
TOP
-40 to 85
o
Storage Temperature Range
TSTG
-40 to 125
o
Power Supply Voltage
Unit
V
DIP
500
SOIC
800
mW
C
C
Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operation Ratings" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operation Ratings
Parameter
Min.
Max.
Unit
Supply Voltage
±4
± 18
V
Issue Date: Jan. 2003
2
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Electrical Characteristics
Operating Conditions: VCC = +15V, VEE = - 15V, TA= 25oC unless otherwise specified.
Parameter
Conditions
Input Offset Voltage
Min.
Typ.
Max.
Unit
-
0.5
6
mV
Input Bias Current
VCM = 0V
-
25
250
nA
Input Offset Current
VCM = 0V
-
2.5
100
nA
0.3
5
-
MΩ
-
3.3
5.7
mA
Input Resistance
RL = ∞, Over full temperature
Supply Current
range
Large Signal Voltage Gain
RL ≥2Κ, VO = 1V to 11V
85
100
-
dB
Common Mode Rejection Ratio
VCM = 0V to VCC - 15V
80
92
-
dB
Power Supply Rejection Ratio
VCC=5V to 18V
VEE =− 5V to - 18V
80
95
-
dB
Output Current
Source
V+ = 1V, V- = 0V
-
50
-
mA
Sink
V+ = 0V, V- = 1V
-
50
-
mA
Output Voltage Swing
RL≥2KΩ
±10
±13
-
RL≥10KΩ
±12
±14
-
-
1.3
-
V / µS
-
10
-
nV/(HZ)0.5
-
3.4
-
MHz
Slew Rate
Equivalent Input Noise Voltage
Rs=50Ω, f=1KHz
Gain Bandwidth Product
Issue Date: Jan. 2003
3
V
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Typical Characteristics
30
VCC=15V, VEE=-15V
100
25
o
RL=2K,TA=25 C
Output Voltage Swing (V)
Open Loop Voltage Gain (dB)
120
80
60
40
VCC=15V,VEE=-15V,
20
o
RL=2K, TA=25 C
15
10
20
5
0
0
1
2x10 HZ 10 HZ
2
10 HZ
3
4
10 HZ
10 HZ
5
10 HZ
0
6
10 HZ
1
10 HZ
2
3
10 HZ
10 HZ
5
10 HZ
6
10 HZ
Frequency (HZ)
Frequency (HZ)
Figure 4. Open Loop Voltage Gain vs. Frequency
Figure 5. Maximum Output Voltage Swing vs. Frequency
3
30
0.5
Equivllent Input Noise Voltage (nV/(HZ) )
10
o
VCC=15V,VEE=-15V,TA=25 C
28
Output Voltage Swing (V)
4
10 HZ
26
24
22
20
18
16
14
12
VCC=15V, VEE=-15V
o
RS=50Ω,TA=25 C
2
10
1
10
0
0.1K
1K
10
0
10 HZ
10K
Load Resistance (kΩ)
2
10 HZ
3
10 HZ
Frequency (HZ)
Figure 6. Maximum Output Voltage Swing
vs. Load Resistance
Issue Date: Jan. 2003
1
10 HZ
Figure 7. Equivalent Input Noise Voltage vs. Frequency
4
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Typical Characteristics (Continued)
80
1.2
70
1.1
VCC=15V
VEE=-15V
V CC=15V
V EE=-15V
60
0.9
Bias Current (nA)
Offset Voltage (mV)
1.0
0.8
0.7
0.6
0.5
50
40
30
20
0.4
10
0.3
0.2
-25
0
25
50
75
100
0
125
-25
0
25
50
75
100
125
o
o
Ambient Temperature ( C)
Ambient Temperature ( C)
Figure 8. Input Offset Voltage vs. Temperature
Figure 9. Input Bias Current vs. Temperature
Typical Application
C1 10 µF
R5 20K
R2 20K
VIN
R3 10K
R4 20K
D1
1S1588
R1 20K
HWD4558
HWD4558
VO=VIN
D2
1S1588
R6 15K
R7 6.2K
Figure 10. Typical Application of HWD4558
Issue Date: Jan. 2003
5
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Mechanical Dimensions
DIP - 8
9.2±0.10
7.62±0.25
5°
0.7
6°
6°
4°
3.30±0.30
1.46±0.31
4°
φ3×0.15±0.05
0.254
0.457
0.28±0.07
2.54
10.0MAX
R0.75
Issue Date: Jan.
. n 2003
6.60±0.50
0.13MIN
6
Rev.1.0
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Mechanical Dimensions (Continued)
0.2±0.10
7°
0.70±0.025
4.9±0.10
7°
0.32
0.22±0.03
1.55±0.20
SOIC - 8
8°
8°
D
6.00±0.20
D
φ0.8
0.20
20:1
0.90
3.90±0.10
4°
±4°
1.00
R0.15
R0.15
3°
±2°
0.42±0.09
Issue Date: Jan. 2003
7
Rev.1.0
Chengdu Sino Microelectronics System Co.,Ltd
(Http://www.csmsc.com)
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