APM3011NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • Avalanche Rated • Lead Free Available (RoHS Compliant) G Super High Dense Cell Design D S Top View of TO-252 Reliable and Rugged (2) D1 Applications • (1) G1 Power Management in Desktop Computer or DC/DC Converters S1 (3) N-Channel MOSFET Ordering and Marking Information P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube T R : T ape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e A PM 3011N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode A PM 3011N U : A PM 3011N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM3011NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG Storage Temperature Range V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD RθJC Maximum Power Dissipation TC=25°C 100 TC=100°C 65 TC=25°C 40 TC=100°C 22 TC=25°C 50 TC=100°C 20 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation TA=25°C 100 TA=100°C 65 TA=25°C 10 TA=100°C 6 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 TA=25°C 100 TA=100°C 65 TA=25°C 7 TA=100°C 4 TA=25°C 1.5 TA=100°C 0.5 75 A A W °C/W www.anpec.com.tw APM3011NU Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy (TA = 25°C unless otherwise noted) Test Condition Zero Gate Voltage Drain Current IGSS a 30 1 30 Gate Leakage Current VGS=±20V, VDS=0V 1 Unit mJ V VDS=24V, VGS=0V VDS=VGS, IDS=250µA Drain-Source On-state Resistance Max. 100 Gate Threshold Voltage Diode Characteristics a VSD Diode Forward Voltage b IS Typ. TJ=85°C VGS(th) RDS(ON) Min. ID=20A, VDD=20V Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS APM3011NU 1.5 µA 2 V ±100 nA VGS=10V, IDS=20A 9 11 VGS=4.5V, IDS=10A 13 17 ISD=10A , VGS=0V 0.9 1.3 V 20 A Diode continuous forward current TC=25°C mΩ b Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 1560 pF 345 245 10 20 15 25 35 50 15 20 17.8 24 ns b VDS=15V, VGS=4.5V, IDS=20A 4.6 nC 10 Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM3011NU Typical Characteristics Drain Current Power Dissipation 50 60 40 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 30 20 10 10 0 0 20 40 60 0 80 100 120 140 160 180 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 100 ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 300 it Lim n) o ( s Rd 10ms 100ms 10 1s DC 1 o Tc=25 C 0.1 0.1 0 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 70 Mounted on 1in pad o RθJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 4 www.anpec.com.tw APM3011NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 40 24 VGS=5,6,7,8,9,10V 35 4V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 30 25 20 3.5V 15 10 3V 5 0 20 16 VGS=4.5V 12 VGS=10V 8 4 2.5V 0 2 4 6 8 0 10 0 5 10 15 20 25 35 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 40 1.6 40 IDS =250µA Normalized Threshold Vlotage 36 32 ID - Drain Current (A) 30 28 o Tj=125 C 24 o 20 Tj=-55 C o Tj=25 C 16 12 8 1.4 1.2 1.0 0.8 0.6 0.4 4 0 0 1 2 3 4 0.2 -50 -25 5 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 5 www.anpec.com.tw APM3011NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 40 1.8 VGS = 10V IDS = 20A 10 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 9mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge V VGS - Gate-source Voltage (V) 2000 Ciss 1500 1000 500 Coss Crss 5 1.4 10 9 C - Capacitance (pF) 0.6 VSD - Source-Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 2500 0 0.2 DS =15 V ID = 2 0 A 8 7 6 5 4 3 2 1 10 15 20 0 25 5 10 15 20 25 30 35 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 6 www.anpec.com.tw APM3011NU Avalanche Test Circuit and Waveforms V DS tp L V D SX( SU S) V DS DUT IA S RG V DD V DD IL tp EA S 0.0 1 Ω tAV Switching Time Test Circuit and Waveforms V DS RD V DS DUT V 90% GS RG V DD 10% V GS tp t d (on) t r Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 t d (off) t f www.anpec.com.tw APM3011NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0. 0 20 8 www.anpec.com.tw APM3011NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM3011NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 D1 10 Ko www.anpec.com.tw APM3011NU Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 Bo Ko t 2.5± 0.1 0.3±0.05 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 11 www.anpec.com.tw