APM4550K Dual Enhancement Mode MOSFET (N- and P-Channel) Pin Description Features • N-Channel 30V/7A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -30V/-5A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V (7) (8) D1 D1 RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V • • • Super High Dense Cell Design Reliable and Rugged (4) G2 Lead Free Available (RoHS Compliant) (2) G1 Applications • (3) S2 S1 (1) Power Management in Notebook Computer, D2 (5) Portable Equipment and Battery Powered N-Channel Systems D2 (6) P-Channel Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel TU : Tube Lead Free Code L : Lead Free Device APM4550 Lead Free Code Handling Code Temp. Range Package Code APM4550K : APM4550 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 1 www.anpec.com.tw APM4550K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 7 -5 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current 30 -20 IS* Diode Continuous Forward Current 2.5 -2 TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation VGS=±10V Parameter A A °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient 2 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. Symbol V 150 RθJA* Electrical Characteristics Unit W °C/W 62.5 (TA = 25°C unless otherwise noted) APM4550K Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA N-Ch 30 VGS=0V, IDS=-250µA P-Ch -30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IDSS V 1 N-Ch 30 TJ=85°C VDS=-24V, VGS=0V -1 P-Ch -30 TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 VDS=VGS, IDS=250µA N-Ch 1 1.5 2 VDS=VGS, IDS=-250µA P-Ch -1 -1.5 -2 VGS=±20V, VDS=0V N-Ch ±100 P-Ch ±100 VGS=10V, IDS=7A N-Ch 20 27.5 VGS=-10V, IDS=-5A P-Ch 40 50 VGS=4.5V, IDS=5A N-Ch 30 40 VGS=-4.5V, IDS=-4A P-Ch 62 80 2 µA V nA mΩ www.anpec.com.tw APM4550K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4550K Test Condition Min. Typ. Max. Unit Diode Characteristics VSD a Diode Forward Voltage ISD=2.5A, V GS=0V N-Ch 0.8 1.3 ISD=-2A, V GS=0V P-Ch -0.8 -1.3 trr Reverse Recovery Time N-Channel ISD=7A, dlSD/dt=100A/µs N-Ch 8 P-Ch 13 Q rr Reverse Recovery Charge N-Channel ISD=-5A, dlSD/dt=100A/µs N-Ch 3 P-Ch 5 N-Ch 2 P-Ch 8.3 N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz N-Ch 620 P-Ch 590 N-Ch 85 P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz P-Ch 95 N-Ch 65 P-Ch 70 N-Ch 6 11 P-Ch 5 9 N-Ch 10 18 P-Ch 12 23 N-Ch 22 41 P-Ch 27 50 N-Ch 3 6 P-Ch 13 24 N-Channel VDS=15V, V GS=10V, IDS=7A N-Ch 14 19 P-Ch 11 15 N-Ch 1.4 P-Channel VDS=-15V, V GS=-10V, IDS=-5A P-Ch 1.3 N-Ch 2.6 P-Ch 2.7 Dynamic Characteristics Gate Resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf ns nC b RG td(OFF) V VGS=0V,V DS=0V,F=1MHz N-Channel VDD=15V, R L=15Ω, IDS=1A, V GEN=10V, R G=6Ω Turn-off Delay Time P-Channel VDD=-15V, R L=15Ω, IDS=-1A, V GEN=-10V, R G=6Ω Turn-off Fall Time Gate Charge Characteristics Ω pF ns b Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge nC Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 3 www.anpec.com.tw APM4550K Typical Characteristics N-Channel Drain Current Power Dissipation 8 2.5 7 2.0 ID - Drain Current (A) Ptot - Power (W) 6 1.5 1.0 5 4 3 2 0.5 1 o o TA=25 C 0.0 0 20 TA=25 C,VG=10V 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 10 Rd s(o n) ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 300µs 1ms 1 10ms 100ms 0.1 1s DC O TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) N-Channel Output Characteristics 30 Drain-Source On Resistance 50 VGS= 4.5,5,6,7,8,9,10V 27 4V RDS(ON) - On - Resistance (mΩ) 45 ID - Drain Current (A) 24 21 18 15 3.5V 12 9 3V 6 40 VGS=4.5V 35 30 25 VGS=10V 20 15 10 3 2.5V 0 0.0 5 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 30 IDS=250µΑ ID=7A 1.4 Normalized Threshold Voltage 45 RDS(ON) - On - Resistance (mΩ) 25 VDS - Drain-Source Voltage (V) 50 40 35 30 25 20 15 10 20 1.2 1.0 0.8 0.6 0.4 0.2 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.00 30 VGS = 10V IDS = 7A 10 o Tj=150 C 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 20mΩ 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1000 10 Frequency=1MHz VDS=15V 900 VGS - Gate - source Voltage (V) 9 C - Capacitance (pF) 800 700 Ciss 600 500 400 300 200 100 0 Coss IDS=7A 8 7 6 5 4 3 2 1 Crss 0 0 5 10 15 20 25 30 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 0 6 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Power Dissipation Drain Current 6 2.5 5 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 0.5 4 3 2 1 o 0.0 o TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 300µs 1ms 1 10ms 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0 Tj - Junction Temperature (°C) 50 10 TA=25 C,VG=-10V 0.1 1 10 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 20 90 RDS(ON) - On - Resistance (mΩ) 18 100 VGS=-4.5-5,-6,-7 -8,-9,-10V -4V -ID - Drain Current (A) 16 -3.5V 14 12 10 -3V 8 6 4 -2.5V 80 VGS=-4.5V 70 60 50 VGS=-10V 40 30 20 2 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 8 12 16 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 ID=-5A 90 20 IDS= -250µΑ 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 4 -VDS - Drain - Source Voltage (V) 100 80 70 60 50 40 30 20 0 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 20 2.0 VGS = -10V IDS = -5A 10 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 40mΩ 0.2 -50 -25 0 25 50 75 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 Frequency=1MHz VDS= -15V 9 C - Capacitance (pF) 600 -VGS - Gate - source Voltage (V) 700 Ciss 500 400 300 200 100 0 Coss Crss 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 IDS= -5A 9 www.anpec.com.tw APM4550K Package Information SOP-8 D E E1 SEE VIEW A h X 45 ° c A 0.25 b A2 e L 0 A1 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L SOP-8 MILLIMETERS MIN. INCHES MAX. A MIN. MAX. 1.75 0.069 0.004 0.25 0.010 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 0.049 D 4.90 BSC 0.193 BSC E 6.00 BSC 0.236 BSC E1 3.90 BSC 0.154 BSC e 1.00 BSC 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0° 8° 0° Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 10 8° www.anpec.com.tw APM4550K Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP-8 A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Devices Per Reel Package Type SOP- 8 Devices Per Reel 2500 Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 11 www.anpec.com.tw APM4550K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Time 25°C to Peak Temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 12 www.anpec.com.tw APM4550K Classification Reflow Profiles (Cont.) Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures 3 Volume mm ≥350 3 Package Thickness Volume mm <350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm <350 Volume mm 350-2000 Volume mm >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* * Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST ESD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78 Description 245°C, 5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100%RH, 121°C -65°C~150°C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms, 1tr > 100mA Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pao Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 13 www.anpec.com.tw