APTGT150X120E3G 3 Phase bridge Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 150A @ Tc = 80°C Application • AC Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration 17 15 20 14 21 13 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 220 150 350 ±20 700 Tj = 125°C 300A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2006 1 2 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS complaint V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT150X120E3G – Rev 1 19 APTGT150X120E3G All ratings @ Tj = 25°C unless otherwise specified ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Diode Forward Voltage Er Reverse Recovery Energy trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 5.0 1.7 2.0 5.8 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 2.2Ω Test Conditions VR=1200V DC Forward current VF Min IF = 150A VGE = 0V IF = 150A VR = 600V di/dt =3000A/µs Typ 10.8 0.56 0.5 250 30 420 Unit 250 2.1 µA 6.5 600 V nA Max Unit V nF ns 70 300 50 520 ns 90 14 mJ 17 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 125°C 150 1.6 1.6 12 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 170 280 15 29 APT website – http://www.advancedpower.com Max Max 250 500 Unit V µA A 2.1 V mJ ns January, 2006 Symbol Characteristic µC 2-5 APTGT150X120E3G – Rev 1 Electrical Characteristics APTGT150X120E3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 3 Typ Max 0.18 0.34 Unit °C/W V 150 125 125 4.5 300 °C N.m g E3 Package outline (dimensions in mm) PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT website – http://www.advancedpower.com 3-5 APTGT150X120E3G – Rev 1 January, 2006 PIN 21 APTGT150X120E3G Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 300 TJ = 125°C 250 TJ =25°C 200 150 VGE =15V 150 100 100 50 50 VGE=9V 0 0 1 2 VCE (V) 3 4 0 40 30 200 E (mJ) TJ=125°C 150 100 3 4 Eon Eoff 20 Eon Er 10 T J=125°C 50 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2 Ω T J = 125°C T J=25°C 250 1 Energy losses vs Collector Current Transfert Characteristics 300 IC (A) VGE=13V 200 0 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 35 350 V CE = 600V VGE =15V IC = 150A TJ = 125°C 25 Eon 250 Eoff 20 15 300 Eon IC (A) 30 E (mJ) VGE =17V TJ=125°C IC (A) IC (A) 250 Er 10 200 150 V GE=15V T J=125°C RG=2.2 Ω 100 5 50 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16 0 400 800 VCE (V) 1200 1600 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 0.02 IGBT 0.9 January, 2006 0.16 0.14 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT150X120E3G – Rev 1 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 0.18 APTGT150X120E3G Forward Characteristic of diode 300 50 VCE=600V D=50% RG=2.2 Ω TJ=125°C TC=75°C ZVS 40 ZCS 250 200 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 150 100 20 Hard Switching 10 TJ=125°C 50 TJ =25°C 0 0 10 40 70 100 130 160 190 0 220 0.4 0.8 IC (A) 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT150X120E3G – Rev 1 January, 2006 rectangular Pulse Duration (Seconds)