AUSTIN AS27C256

UVEPROM
AS27C256
Austin Semiconductor, Inc.
256K UVEPROM
PIN ASSIGNMENT
(Top View)
UV Erasable Programmable
Read-Only Memory
28-Pin DIP (J)
(600 MIL)
AVAILABLE AS MILITARY
SPECIFICATIONS
VPP
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
• -55C to 125C operation
• MILITARY Processing Method MIL-PRF-38535, Class Q
• Commercial Version Available
FEATURES
•
•
•
•
•
•
•
•
Organized 32,768 x 8
Single +5V ±10% power supply
Pin-compatible with existing 256K ROM’s and EPROM’s
All inputs/outputs fully TTL compatible
Power-saving CMOS technology
Very high-speed FLASHRITE Pulse Programming
3-state output buffers
400-mV DC assured noise immunity with standard TTL
loads
• Latchup immunity of 250 mA on all input and output pins
• Low power dissipation (CMOS Input Levels)
-Active - 165mW Worst Case
-Standby - 1.7mW Worst Case (CMOS-input levels)
* FUTURE High Speed Offerings: 55ns, 70ns, 90ns
• Timing
120ns access
150ns access
170ns access
200ns access
250ns access
300ns access
55ns access
70ns access
90ns access
Vcc
A14
A13
A8
A9
A11
G\
A10
E\
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A12
A12
A14
6
VA10
PP
NC
NC
CC
VVCC
A15
A14
CE2
A13
32-Pin LCC (ECA)
(450 x 550 mils)
4 3 2 1 32 31 30
A6 5
A7
A5 6
A6
A4 7
A5
A3 8
A4
A2 9
A3
A2
A1 10
A1
A0 11
A0
NC 12
DQ1
DQ0 13
MARKING
29 A8
WE \
28 A9
A13
27 A11
A8
26 NC
A9
25 G\
A11
24 A10
OE \
23 E\A10
22 DQ7
CE1\
21 DQ6
DQ8
14 15 16 17 18 19 20
-12
-15
-17
-20
-25
-30
-55
-70
-90
Pin Name
Pin- Name
A0
A14
DQ0-DQ7
E\
G\
GND
• Package(s)
Ceramic DIP (600mils) J
No. 110
Ceramic LCC (450 x 550 mils) ECA No. 208
• Processing / Operating Temperature Ranges
Full Military (-55oC to +125oC)
M
Industrial (-40°C to +85°C)
I
Military Temp (-55oC to +125oC) XT
AS27C256
Rev. 2.0 7/06
28
27
26
25
24
23
22
21
20
19
18
17
16
15
DQ1
DQ2
DQ2
DQ3
VSS
GND
DQ4
NC
DQ5
DQ3
DQ6
DQ4
DQ7
DQ5
OPTIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Function
Function
Address Inputs
Inputs (programming)/Outputs
Chip Enable/Power Down
Output Enable
Ground
VCC
5V Supply
VPP
13V Programming Power Supply
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
UVEPROM
AS27C256
Austin Semiconductor, Inc.
GENERAL DESCRIPTION
The AS27C256 series is a set of 262,144 bit, ultraviolet-light
erasable, electrically programmable read-only
memories.
These devices are fabricated using power-saving CMOS technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be
driven by Series 54 TTL circuits without the use of external
pullup resistors. Each output can drive one Series 54 TTL
circuit without external resistors. The data outputs are 3-state
for connecting multiple devices to a
common bus. The
AS27C256 is pin-compatible with 28-pin 256K ROMs and
EPROMs. It is offered in a 600mil dual-in-line ceramic package
(J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for
operation from -55°C to 125°C.
Because this EPROM operates from a single 5V supply (in
the read mode), it is ideal for use in microprocessor-based systems. One other supply (12.75V) is needed for programming.
All programming signals are TTL level. This device is
programmable by the AMD FLASHRITE Pulse programming algorithm. The FLASHRITE Pulse programming algorithm uses a
VPP of 12.75VV and a VCC of 6.25V for a nominal programming
time of four seconds. For programming outside the system,
existing EPROM programmers can be used. Locations can be
programmed singly, in blocks, or at random.
FUNCTIONAL BLOCK DIAGRAM*
EPROM 32,768 x 8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
E\
G\
10
9
8
7
6
5
4
3
25
24
21
23
2
26
27
20
22
0
A
0
32,767
A
A
A
A
A
A
A
A
11
12
13
15
16
17
18
19
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
14
[PWR DWN]
&
EN
* This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
UVEPROM
AS27C256
Austin Semiconductor, Inc.
OPERATION
The seven modes of operation for the AS27C256 are listed in Table 1. The read mode requires a single 5V supply.
All inputs are TTL level except for VPP during programming (12.75V for FLASHRITE Pulse), and (12V) on A9
for signature mode.
TABLE 1. OPERATION MODES
1
2
MODE*
OUTPUT
STANDBY PROGRAMMING VERIFY
DISABLE
FUNCTION
(PINS)
READ
E\
VIL
VIL
VIH
VIL
VIH
G\
VIL
VIH
X
VIH
VIL
X
VIL
VPP
X1
X1
X1
VPP
VPP
VPP
VCC
VCC
VCC
VCC
VCC+/-.3V
VCC
VCC
VCC
PROGRAM
SIGNATURE MODE
INHIBIT
VIL
VIH
VCC
A9
X
X
X
X
X
X
2
VID
A0
X
X
X
X
X
X
VIL
DQ0-DQ7
Data Out
High-Z
High-Z
Data In
Data Out
High-Z
2
VID
VIH
CODE**
MFG
DEVICE
01h
10h
For normal standby & read operation, VPP is Don't Care X.
VID = 12V +/- .5V
NOTES:
* X can be VIL or VIH
**
Die is AMD. User can program on benchtop programmer by selecting AM27C256 from the device
type selection menu.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
UVEPROM
Austin Semiconductor, Inc.
AS27C256
READ/OUTPUT DISABLE
FLASHRITE PULSE PROGRAMMING
When the outputs of two or more AS27C256 are connected in
parallel on the same bus, the output of any particular device in
the circuit can be read with no interference from the competing outputs of the other devices. To read the output of the
selected AS27C256, a low-level signal is applied to E\ and G\.
All other devices in the circuit should have their outputs
disabled by applying a high-level signal to one of these pins.
Output data is accessed at pins DQ0 through DQ7.
The AS27C256 EPROM is programmed by using the AMD
FLASHRITE Pulse programming algorithm as illustrated by the
flowchart in Figure 1. This algorithm programs the device in a
nominal time of 4 seconds. Actual programming time varies as
a function of the programmer used.
LATCHUP IMMUNITY
The FLASHRITE Pulse programming algorithm uses initial
pulses of 100 microseconds (µs) followed by a byte-verification step to determine when the addressed byte has been successfully programmed. Up to 25 100µs pulses per byte are
provided before a failure is recognized.
Data is presented in parallel (eight bits) on pins DQ0 to DQ7.
Once addresses and data are stable, E\ is pulsed.
Latchup immunity on the AS27C256 is a minimum of 250mA on
all inputs and outputs. This feature provides latchup
immunity beyond any potential transients at the printed
circuit board level when the EPROM is interfaced to industry
standard TTL or MOS logic devices. Input/output layout
approach controls latchup without compromising performance
or packing density.
The programming mode is achieved when VPP = 12.75V,
VCC= 6.25V, G\ = VIH, and E\ = VIL. More than one device can be
programmed when the devices are connected in parallel. Locations can be programmed in any order. When the AMD
FLASHRITE Pulse programming routine is completed, all bits
are verified with VCC = VPP = 5V.
POWER DOWN
Active ICC supply current can be reduced from 25mA (AS27C25612 through AS27C256-25) to 1mA (TTL-level inputs) or 300µA
(CMOS-level inputs) by applying a high TTL/CMOS signal to
the E\ pin. In this mode all outputs are in the high-impedance
state.
PROGRAM INHIBIT
Programming can be inhibited by maintaining a high-level
input on E\.
ERASURE
Before programming, the AS27C256 is erased by exposing the
chip through the transparent lid to a high-intensity ultraviolet
light (wavelength 2537 Å). EPROM erasure before programming is necessary to ensure that all bits are in the logic-high
state. Logic-lows are programmed into the desired locations. A
programmed logic-low can be erased only by ultraviolet light.
The recommended minimum exposure dose (UV intensity x exposure time) is 15W•s/cm2. A typical 12mW/cm2, filterless UV
lamp erases the device in 21 minutes. The lamp should be
located about 2.5cm above the chip during erasure. After erasure, all bits are in the high state. It should be noted that normal
ambient light contains the correct wavelength for erasure; therefore, when using the AS27C256, the window should be covered
with an opaque label.
AS27C256
Rev. 2.0 7/06
PROGRAM VERIFY
Programmed bits can be verified with VPP = 12.75V when G\ =
VIL, and E\ = VIH.
SIGNATURE MODE
The signature mode provides access to a binary code
identifying the manufacturer and device type. This mode is activated when A9 is forced to 12V ±0.5V. Two identifier bytes are
accessed by A0 (terminal 10); i.e., A0=VIL accesses the manufacturer code, which is output on DQ0-DQ7; A0=VIH accesses
the device code, which is also output on DQ0-DQ7. All other
addresses must be held at VIL. Each byte contains odd parity
on bit DQ7. The manufacturer code for these devices is 01h
and the device code is 10h.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
UVEPROM
Austin Semiconductor, Inc.
AS27C256
FIGURE 1. FLASHRITE PULSE PROGRAMMING FLOWCHART
Start
Address = First Location
VCC=6.25V, VPP=12.75V
X=0
Program One 100us Pulse
Increment X
Programming
Section
X = 25 ?
FAIL
Increment Address
NO
YES
NO
Program
Verify
Byte?
Pass
Last
Address?
Yes
VCC = VPP = 5.25V
Read
Verify
Section
READ
Verify
Bytes?
FAIL
Device Failed
Pass
Device Passed
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
UVEPROM
AS27C256
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range, VCC**...........................-0.6V to +7.0V
Supply Voltage Range, Vpp**...............................-0.6V to +13.5V
Input Voltage Range, All inputs except A9**..-0.6V to +6.0V
A9.....-0.6V to +13.5V
Output Voltage Range**...............................-0.6V to VCC +.6V
Minimum Operating Free-air Temperature, TA..............-55°C
Maximum Operating Case Temperature, TC...................125°C
Storage Temperature Range, Tstg.....................-65°C to 150°C
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
** All voltage values are with respect to GND.
RECOMMENDED OPERATING CONDITIONS
1
VCC
Supply Voltage
VPP
Supply Voltage
Read Mode
FLASHRITE Pulse programming algorithm
MIN
TYP
4.5
5
MAX
5.5
6
6.25
6.5
12.5
12.75
2
VIH
Read Mode
FLASHRITE Pulse programming algorithm
13
2.2
VCC+.6
CMOS inputs
VCC-0.2
VCC+.6
TTL inputs
CMOS inputs
-0.5
-0.5
0.8
0.2
TTL inputs
High-level input voltage
VCC-0.6
VIL
Low-level input voltage
VID
Voltage level on A9 for signature mode
11.5
TA
Operating free-air temperature
-55
TC
Operating case temperature
12
12.5
+125
NOTES:
1. VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The deivce must not be inserted into or
removed from the board when VPP or VCC is applied.
2. VPP can be connected to VCC directly (except in the program mode). VCC supply current in this case would be ICC2 + IPP1.
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE
AND OPERATING FREE-AIR TEMPERATURE
TEST CONDITIONS
PARAMETER
MIN
TYP
1
MAX
UNIT
VOH
High-level output voltage
IOH = -400µA
VOL
Low-level output voltage
IOL = 2.1mA
0.4
V
II
Input current (leakage)
VI = 0V to 5.5V
±1
µA
IO
2.4
V
Output current (leakage)
VO = 0V to V CC
±5
µA
IPP1
VPP supply current
VPP = VCC = 5.5V
100
µA
IPP2
VPP supply current (during program pulse)
50
mA
mA
ICC1
ICC2
2
VCC supply current (standby)
VCC supply current (active)
30
VPP = 13V
TTL-Input Level
VCC = 5.5V, E\=V IH
1
CMOS-Input Level
VCC = 5.5V, E\=V CC
300
µA
'27C256-12
'27C256-15
'27C256-17
'27C256-20,-25
tcycle = minimum, outputs
open
25
mA
E\=VIL, VCC=5.5V
15
NOTES:
1. Typical values are at TA=25°C and nominal voltages.
2. This parameter has been characterized at 25°C and is not tested.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
UVEPROM
AS27C256
Austin Semiconductor, Inc.
CAPACITANCE OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE, f = 1MHz*
PARAMETER
TEST CONDITIONS
TYP**
MAX
UNIT
Ci
Input capacitance
VI = 0V
6
10
pF
Co
Output capacitance
VO = 0V
10
14
pF
* Capacitance measurements are made on a sample basis only.
** Typical values are at TA = 25°C and nominal voltages.
SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE1,2
TEST
PARAMETER
-12
CONDITIONS
1, 2
-15
MIN MAX MIN MAX
UNIT
ta(A)
Access time from address
120
150
ns
ta(E)
Access time from E\
120
150
ns
40
50
ns
30
ns
ten(G)R Output enable time from G\
tdis
tv(A)
see Figure 2
Disable time of output from G\ or E\,
0
3
whichever occurs first
Output data valid time after change of
0
3
address, E\, or G\, whichever occurs first
TEST
PARAMETER
30
CONDITIONS
1, 2
0
0
ns
-17
-20
-25
MIN MAX MIN MAX MIN MAX
UNIT
ta(A)
Access time from address
170
200
250
ns
ta(E)
Access time from E\
170
200
250
ns
50
60
60
ns
60
ns
ten(G)R Output enable time from G\
tdis
tv(A)
see Figure 2
Disable time of output from G\ or E\,
0
3
whichever occurs first
Output data valid time after change of
0
3
address, E\, or G\, whichever occurs first
40
0
50
0
0
0
ns
NOTES:
1.Timing measurements are made at 2V for logic high and 0.8V for logic low (see figure 2).
2. Common test conditions apply for tdis except during programming.
3. Value calculated from 0.5V delta to measured output level. This parameter is only sampled and not 100% tested.
SWITCHING CHARACTERISTICS FOR PROGRAMMING: VCC = 6.5V and VPP = 12.75V (AMD
FLASHRITE ALGO), TA = 25°C
PARAMETER
tdis(G)
Output disable time from G\
ten(G)W Output enable time from G\
AS27C256
Rev. 2.0 7/06
MIN
0
MAX
130
UNIT
ns
150
ns
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
UVEPROM
AS27C256
Austin Semiconductor, Inc.
RECOMMENDED TIMING REQUIREMENTS FOR PROGRAMMING: VCC = 6.5 and VPP =
12.75V (AMD FLASHRITE ALGO), TA = 25°C (See Figure 2)
MIN
0
TYP
MAX
UNIT
µs
th(A)
Hold Time, Address
th(D)
Hold Time, Data
2
Pulse Duration, Initial Program
95
tsu(A)
Setup Time, Address
2
µs
tsu(G)
Setup Time, G\
2
µs
tsu(E)
Setup Time, E\
2
µs
tsu(D)
Setup Time, Data
2
µs
tsu(VPP) Setup Time, VPP
2
µs
tsu(VCC) Setup Time, VCC
2
µs
tw(E)PR
µs
100
105
µs
PARAMETER MEASUREMENT INFORMATION
2.08V
RL = 800Ω
Output Under Test
CL = 100 pF1
NOTES:
1. CL includes probe and fixture capacitance.
The AC testing inputs are driven at 2.4V for logic high and 0.4V for logic low. Timing measurements are made
at 2V for logic high and 0.8V for logic low for both inputs and outputs.
FIGURE 2. LOAD CIRCUIT AND VOLTAGE WAVEFORMS
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
UVEPROM
Austin Semiconductor, Inc.
AS27C256
FIGURE 3. READ-CYCLE TIMING
FIGURE 4. PROGRAM-CYCLE TIMING (FLASHRITE PULSE PROGRAMMING)
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
UVEPROM
AS27C256
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #110 (Package Designator J)
D
S2
A
Q
L
E
S1
b2
e
b
eA
c
Symbol
A
b
b2
c
D
E
eA
e
L
Q
S1
S2
SMD Specifications
MIN
MAX
--0.232
0.014
0.026
0.045
0.065
0.008
0.018
--1.490
0.500
0.610
0.600 BSC
0.100 BSC
0.125
0.200
0.015
0.060
0.005
--0.005
---
*All measurements are in inches.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
UVEPROM
AS27C256
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA)
D1
A
L1
e
E1
E
See Detail A
L
D
b
Detail A
b1
SYMBOL
A
b
b1
D
D1
E
E1
e
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.060
0.120
0.022
0.028
0.006
0.022
0.442
0.458
0.300 BSC
0.540
0.560
0.400 BSC
0.050 BSC
0.045
0.055
0.075
0.095
*All measurements are in inches.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
UVEPROM
Austin Semiconductor, Inc.
AS27C256
ORDERING INFORMATION
EXAMPLE: AS27C256-30JM/MIL
Device Number
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
Speed
Package Type
-55
-70
-90
-12
-15
-17
-20
-25
-30
Operating Temp.
J
J
J
J
J
J
J
J
J
*
*
*
*
*
*
*
*
*
EXAMPLE: AS27C256-15ECAM
Device Number
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
AS27C256
Speed
-55
-70
-90
-12
-15
-17
-20
-25
-30
Package Type
ECA
ECA
ECA
ECA
ECA
ECA
ECA
ECA
ECA
Operating Temp.
*
*
*
*
*
*
*
*
*
*PROCESS / OPERATING TEMPERATURE
M = Full Military Processing Per
-55oC to +125oC
MIL-PRF-3835, Class Q
I = Industrial Temperature Range
-40°C to +85°C
XT = Military Temperature Range
-55oC to +125oC
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
UVEPROM
AS27C256
Austin Semiconductor, Inc.
SMD ORDERING INFORMATION
AS27C256
Rev. 2.0 7/06
SMD
5962-8606301XA
5962-8606311XA
5962-8606302XA
5962-8606312XA
5962-8606303XA
5962-8606313XA
5962-8606304XA
5962-8606314XA
5962-8606305XA
5962-8606315XA
5962-8606306XA
5962-8606316XA
5962-8606307XA
5962-8606317XA
5962-8606308XA
5962-8606318XA
5962-8606309XA
5962-8606319XA
ASI PN
AS27C256 -20JM
AS27C256 -20JM
AS27C256 -25JM
AS27C256 -25JM
AS27C256 -30JM
AS27C256 -30JM
AS27C256 -17JM
AS27C256 -17JM
AS27C256 -15JM
AS27C256 -15JM
AS27C256 -12JM
AS27C256 -12JM
AS27C256 -90JM
AS27C256 -90JM
AS27C256 -70JM
AS27C256 -70JM
AS27C256 -55JM
AS27C256 -55JM
SPEED
200ns
200ns
250ns
250ns
300ns
300ns
170ns
170ns
150ns
150ns
120ns
120ns
90ns
90ns
70ns
70ns
55ns
55ns
PACKAGE
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
600mil, 28LD. DIP
SMD
5962-8606301YA
5962-8606311YA
5962-8606302YA
5962-8606312YA
5962-8606303YA
5962-8606313YA
5962-8606304YA
5962-8606314YA
5962-8606305YA
5962-8606315YA
5962-8606306YA
5962-8606316YA
5962-8606307YA
5962-8606317YA
5962-8606308YA
5962-8606318YA
5962-8606309YA
5962-8606319YA
ASI PN
AS27C256 -20ECA
AS27C256 -20ECA
AS27C256 -25ECA
AS27C256 -25ECA
AS27C256 -30ECA
AS27C256 -30ECA
AS27C256 -17ECA
AS27C256 -17ECA
AS27C256 -15ECA
AS27C256 -15ECA
AS27C256 -12ECA
AS27C256 -12ECA
AS27C256 -90ECA
AS27C256 -90ECA
AS27C256 -70ECA
AS27C256 -70ECA
AS27C256 -55ECA
AS27C256 -55ECA
SPEED
200ns
200ns
250ns
250ns
300ns
300ns
170ns
170ns
150ns
150ns
120ns
120ns
90ns
90ns
70ns
70ns
55ns
55ns
PACKAGE
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
32-LD. 0.450 x 0.550, LCC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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