Features • • • • • • • • • • • • Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Data Sheet Describes Mode 0 Operation Low-voltage and Standard-voltage Operation – 1.8 (VCC = 1.8V to 5.5V) 20 MHz Clock Rate (5V) 64-byte Page Mode and Byte Write Operation Block Write Protection – Protect 1/4, 1/2, or Entire Array Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data Protection Self-timed Write Cycle (5 ms Max) High-reliability – Endurance: 1 Million Write Cycles – Data Retention: >100 Years Green (Pb/Halide-free/RoHS Compliant) Packaging Options Die Sales: Wafer Form, Waffle Pack, and Bumped Die Description SPI Serial EEPROMS 128K (16,384 x 8) 256K (32,768 x 8) AT25128B AT25256B The AT25128B/256B provides 131,072/262,144 bits of serial electrically-erasable programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The devices are available in space saving 8-lead SOIC, 8-lead TSSOP, 8-ball VFBGA and 8-lead UDFN packages. In addition, the entire family is available in 1.8V (1.8V to 5.5V). The AT25128B/256B is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no separate Erase cycle is required before Write. Table 0-1. Pin Configurations Pin Function CS Chip Select SCK Serial Data Clock SI Serial Data Input SO Serial Data Output GND Ground VCC Power Supply WP Write Protect HOLD Suspends Serial Input 8-lead SOIC CS SO WP GND 8-lead TSSOP 1 8 VCC 2 7 3 6 4 5 HOLD SCK SI 8-lead UDFN VCC HOLD SCK SI 8 1 CS 7 2 SO 6 3 WP 5 4 GND Bottom View CS SO WP GND 1 8 2 7 3 6 4 5 VCC HOLD SCK SI 8-ball VFBGA VCC HOLD SCK SI 8 1 7 2 6 3 5 4 CS SO WP GND Bottom View Block Write protection is enabled by programming the status register with top ¼, top ½ or entire array of write protection. Separate Program Enable and Program Disable instructions are provided for additional data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. 8698B–SEEPR–3/10 1. Absolute Maximum Ratings* Operating Temperature ........................–55°C to +125°C *NOTICE: Storage Temperature .........................–65°C to + 150°C Voltage on Any Pin with Respect to Ground.............................. –1.0 V +7.0V Maximum Operating Voltage................................. 6.25V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current .............................................. 5.0 mA Figure 1-1. Block Diagram 16384/32768 x 8 2 AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B Table 1-1. Pin Capacitance (1 Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted) Symbol Test Conditions Max Units COUT Output Capacitance (SO) 8 pF VOUT = 0V CIN Input Capacitance (CS, SCK, SI, WP, HOLD) 6 pF VIN = 0V Notes: Conditions 1. This parameter is characterized and is not 100% tested. Table 1-2. DC Characteristics Applicable over recommended operating range from TA = −40°C to +85°C, VCC = +1.8V to +5.5V, VCC = +1.8V to +5.5V(unless otherwise noted) Symbol Parameter VCC1 Supply Voltage VCC2 Max Units 1.8 5.5 V Supply Voltage 2.5 5.5 V VCC3 Supply Voltage 4.5 5.5 V ICC1 Supply Current VCC = 5.0V at 20 MHz, SO = Open, Read 9.0 10.0 mA ICC2 Supply Current VCC = 5.0V at 10 MHz, SO = Open, Read, Write 5.0 7.0 mA ICC3 Supply Current VCC = 5.0V at 1 MHz, SO = Open, Read, Write 2.2 3.5 mA ISB1 Standby Current VCC = 1.8V, CS = VCC 0.2 3.0 µA ISB2 Standby Current VCC = 2.5V, CS = VCC 0.5 3.0 µA ISB3 Standby Current VCC = 5.0V, CS = VCC 2.0 5.0 µA IIL Input Current VIN = 0V to VCC –3.0 3.0 µA IOL Output Leakage VIN = 0V to VCC, TAC = 0°C to 70°C –3.0 3.0 µA Input Low-voltage –1.0 VCC x 0.3 V VIH Input High-voltage VCC x 0.7 VCC + 0.5 V VOL1 Output Low-voltage 0.4 V VOH1 Output High-voltage VOL2 Output Low-voltage VOH2 Output High-voltage VIL(1) (1) Notes: Test Condition 3.6V VCC 5.5V 1.8V VCC 3.6V Min IOL = 3.0 mA IOH = 1.6 mA VCC - 0.8 IOL = 0.15 mA IOH = 100 µA Typ V 0.2 VCC - 0.2 V V 1. VIL min and VIH max are reference only and are not tested. 3 8698B–SEEPR–3/10 Table 1-3. AC Characteristics Applicable over recommended operating range from TA = – 40°C to + 85°C, VCC = As Specified, CL = 1 TTL Gate and 30 pF (unless otherwise noted) 4 Symbol Parameter Voltage Min Max Units fSCK SCK Clock Frequency 4.5–5.5 2.5–5.5 1.8–5.5 0 0 0 20 10 5 MHz tRI Input Rise Time 4.5–5.5 2.5–5.5 1.8–5.5 2 2 2 µs tFI Input Fall Time 4.5–5.5 2.5–5.5 1.8–5.5 2 2 2 µs tWH SCK High Time 4.5–5.5 2.5–5.5 1.8–5.5 20 40 80 ns tWL SCK Low Time 4.5–5.5 2.5–5.5 1.8–5.5 20 40 80 ns tCS CS High Time 4.5–5.5 2.5–5.5 1.8–5.5 100 100 200 ns tCSS CS Setup Time 4.5–5.5 2.5–5.5 1.8–5.5 100 100 200 ns tCSH CS Hold Time 4.5–5.5 2.5–5.5 1.8–5.5 100 100 200 ns tSU Data In Setup Time 4.5–5.5 2.5–5.5 1.8–5.5 5 10 20 ns tH Data In Hold Time 4.5–5.5 2.5–5.5 1.8–5.5 5 10 20 ns tHD HOLD Setup Time 4.5–5.5 2.5–5.5 1.8–5.5 5 10 20 ns tCD HOLD Hold Time 4.5–5.5 2.5–5.5 1.8–5.5 5 10 20 ns tV Output Valid 4.5–5.5 2.5–5.5 1.8–5.5 0 0 0 tHO Output Hold Time 4.5–5.5 2.5–5.5 1.8–5.5 0 0 0 20 40 80 ns ns AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B Table 1-3. AC Characteristics (Continued) Applicable over recommended operating range from TA = – 40°C to + 85°C, VCC = As Specified, CL = 1 TTL Gate and 30 pF (unless otherwise noted) Symbol Parameter Voltage Min Max Units tLZ HOLD to Output Low Z 4.5–5.5 2.5–5.5 1.8–5.5 0 0 0 25 50 100 ns tHZ HOLD to Output High Z 4.5–5.5 2.5–5.5 1.8–5.5 25 50 100 ns tDIS Output Disable Time 4.5–5.5 2.5–5.5 1.8–5.5 25 50 100 ns tWC Write Cycle Time 4.5–5.5 2.5–5.5 1.8–5.5 5 5 5 ms Endurance (1) Notes: 2. 3.3V, 25°C, Page Mode 1M Write Cycles 1. This parameter is characterized and is not 100% tested. Contact Atmel for further information. Serial Interface Description MASTER: The device that generates the serial clock. SLAVE: Because the serial clock pin (SCK) is always an input, the AT25128B/256B always operates as a slave. TRANSMITTER/RECEIVER: The AT25128B/256B has separate pins designated for data transmission (SO) and reception (SI). MSB: The Most Significant Bit (MSB) is the first bit transmitted and received. SERIAL-OP CODE: After the device is selected with CS going low, the first byte will be received. This byte contains the op-code that defines the operations to be performed. INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the AT25128B/256B, and the serial output pin (SO) will remain in a high impedance state until the falling edge of CS is detected again. This will reinitialize the serial communication. CHIP SELECT: The AT25128B/256B is selected when the CS pin is low. When the device is not selected, data will not be accepted via the SI pin, and the serial output pin (SO) will remain in a high impedance state. HOLD: The HOLD pin is used in conjunction with the CS pin to select the AT25128B/256B. When the device is selected and a serial sequence is underway, HOLD can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low. To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the high impedance state. WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when held high. When the WP pin is brought low and WPEN bit is “1”, all write operations to the status register are inhibited. WP going low while CS is still low will interrupt a write to the status register. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation to the status register. The WP pin function is blocked when the WPEN bit in the status register is “0”. This will allow the user to install the AT25128B/256B in a system with the WP pin tied to ground and still be able to write to the status register. All WP pin functions are enabled when the WPEN bit is set to “1”. 5 8698B–SEEPR–3/10 Figure 2-1. SPI Serial Interface AT25128B/256B 6 AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 3. Functional Description The AT25128B/256B is designed to interface directly with the synchronous serial peripheral interface (SPI) of the 6800 type series of microcontrollers. The AT25128B/256B utilizes an 8-bit instruction register. The list of instructions and their operation codes are contained in Table 3-1. All instructions, addresses, and data are transferred with the MSB first and start with a high-tolow CS transition. Table 3-1. Instruction Set for the AT25128B/256B Instruction Name Instruction Format Operation WREN 0000 X110 Set Write Enable Latch WRDI 0000 X100 Reset Write Enable Register RDSR 0000 X101 Read Status Register WRSR 0000 X001 Write Status Register READ 0000 X011 Read Data from Memory Array WRITE 0000 X 010 Write Data to Memory Array WRITE ENABLE (WREN): The device will power-up in the write disable state when VCC is applied. All programming instructions must therefore be preceded by a Write Enable instruction. WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable instruction disables all programming modes. The WRDI instruction is independent of the status of the WP pin. READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to the status register. The Ready/Busy and Write Enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection bits indicate the extent of protection employed. These bits are set by using the WRSR instruction. Table 3-2. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 WPEN X X X BP1 BP0 WEN RDY Table 3-3. Read Status Register Bit Definition Bit Definition Bit 0 (RDY) Bit 0 = “0” (RDY) indicates the device is ready. Bit 0 = “1” indicates the write cycle is in progress. Bit 1 (WEN) Bit 1 = 0 indicates the device is not write enabled. Bit 1 = “1” indicates the device is write enabled. Bit 2 (BP0) See Table 2-4 on page 9. Bit 3 (BP1) See Table 2-4 on page 9. Bits 4 – 6 are 0s when device is not an internal write cycle. Bit 7 (WPEN) See Table 3-5 on page 8 Bits 0 – 7 are “1”s during an internal write cycle. 7 8698B–SEEPR–3/10 WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of four levels of protection. The AT25128B/256B is divided into four array segments. Top quarter (1/4), top half (1/2), or all of the memory segments can be protected. Any of the data within any selected segment will therefore be read only. The block write protection levels and corresponding status register control bits are shown in Table 2-4. The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties and functions as the regular memory cells (e.g. WREN, tWC, RDSR) Table 3-4. Block Write Protect Bits. Status Register Bits Level Array Addresses Protected BP1 BP0 AT25128B AT25256B 0 0 0 None None 1 (1/4) 0 1 3000 – 3FFF 6000 – 7FFF 2 (1/2) 1 0 2000 – 3FFF 4000 – 7FFF 3 (All) 1 1 0000 – 3FFF 0000 – 7FFF The WRSR instruction also allows the user to enable or disable the write protect (WP) pin through the use of the write protect enable (WPEN) bit. Hardware write protection is enabled when the WP pin is low and the WPEN bit is “1”. Hardware write protection is disabled when either the WP pin is high or the WPEN bit is “0”. When the device is hardware write protected, writes to the Status Register, including the Block Protect bits and the WPEN bit, and the blockprotected sections in the memory array are disabled. Writes are only allowed to sections of the memory which are not block-protected. Note: When the WPEN bit is hardware write protected, it cannot be changed back to “0”, as long as the WP pin is held low. Table 3-5. WPEN Operation WPEN WP WEN Protected Blocks Unprotected Blocks Status Register 0 X 0 Protected Protected Protected 0 X 1 Protected Writable Writable 1 Low 0 Protected Protected Protected 1 Low 1 Protected Writable Protected X High 0 Protected Protected Protected X High 1 Protected Writable Writable READ SEQUENCE (READ): Reading the AT25128B/256B via the SO pin requires the following sequence. After the CS line is pulled low to select a device, the Read op-code is transmitted via the SI line followed by the byte address to be read (Table 2-6). Upon completion, any data on the SI line will be ignored. The data (D7 - D0) at the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high after the data comes out. The read sequence can be continued since the byte address is automatically incremented and data will continue to be shifted out. When the highest address is reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one continuous read cycle. 8 AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B WRITE SEQUENCE (WRITE): In order to program the AT25128B/256B, two separate instructions must be executed. First, the device must be write enabled via the Write Enable (WREN) Instruction. Then a Write instruction may be executed. Also, the address of the memory location(s) to be programmed must be outside the protected address field location selected by the Block Write Protection Level. During an internal write cycle, all commands will be ignored except the RDSR instruction. A Write Instruction requires the following sequence. After the CS line is pulled low to select the device, the Write op-code is transmitted via the SI line followed by the byte address and the data (D7 - D0) to be programmed (see Table 2-6 for the address key). Programming will start after the CS pin is brought high. (The Low-to-High transition of the CS pin must occur during the SCK low time immediately after clocking in the D0 (LSB) data bit. The Ready/Busy status of the device can be determined by initiating a Read Status Register (RDSR) Instruction. If Bit 0 = 1, the Write cycle is still in progress. If Bit 0 = 0, the Write cycle has ended. Only the Read Status Register instruction is enabled during the Write programming cycle. The AT25128B/256B is capable of a 64-byte Page Write operation. After each byte of data is received, the six low order address bits are internally incremented by one; the high order bits of the address will remain constant. If more than 64 bytes of data are transmitted, the address counter will roll over and the previously written data will be overwritten. The AT25128B/256B is automatically returned to the write disable state at the completion of a Write cycle. Note: If the device is not write enabled (WREN), the device will ignore the Write instruction and will return to the standby state, when CS is brought high. A new CS falling edge is required to re-initiate the serial communication. Table 3-6. Address Key Address AT25128B AT25256B AN A13 − A0 A14 − A0 Don’t Care Bits A15 − A14 A15 9 8698B–SEEPR–3/10 4. Timing Diagram (for SPI Mode 0 (0,0) Figure 4-1. Synchronous Data Timing t CS VIH CS VIL t CSH tCSS VIH t WH SCK t WL VIL tH t SU VIH SI VALID IN VIL tV VOH SO t HO t DIS HI-Z HI-Z VOL Figure 4-2. WREN Timing CS SCK SI WREN OP-CODE HI-Z SO Figure 4-3. WRDI Timing CS SCK SI SO 10 WRDI OP-CODE HI-Z AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B Figure 4-4. RDSR Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK SI INSTRUCTION DATA OUT HIGH IMPEDANCE SO 7 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 MSB Figure 4-5. WRSR Timing CS 0 1 2 3 4 5 6 7 SCK DATA IN SI 6 5 4 3 2 1 0 HIGH IMPEDANCE SO Figure 4-6. 7 INSTRUCTION READ Timing CS 0 1 2 3 4 5 6 7 8 23 24 25 26 27 28 29 30 SCK BYTE ADDRESS SI INSTRUCTION AN ... A0 DATA OUT SO HIGH IMPEDANCE 7 6 5 4 3 2 1 0 MSB 11 8698B–SEEPR–3/10 Figure 4-7. WRITE Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31 SCK BYTE ADDRESS SI SO Figure 4-8. 15 14 13 ... 3 INSTRUCTION 2 DATA IN 1 0 7 6 5 4 3 2 1 0 HIGH IMPEDANCE HOLD Timing CS t CD t CD SCK t HD HOLD t HD t HZ SO tLZ 12 AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 5. Ordering Code Detail AT 2 5 1 28 B - S S H L - B Atmel Designator Shipping Carrier Option B or blank = Bulk (tubes) T = Tape and Reel Product Family Operating Voltage L Device Density 128 = 128k 256 = 156k Device Revision = 1.8V to 5.5V Package Device Grade or Wafer/Die Thickness H = Green, NiPdAu lead finish, Industrial Temperature range (-40°C to +85°C) U = Green, matte Sn lead finish, Industrial Temperature range (-40°C to +85°C) 11 = 11mil wafer thickness Package Option SS = X = MA = C = WWU WDT JEDEC SOIC TSSOP UDFN VFBGA = Wafer unsawn = Die in Tape and Reel 13 8698B–SEEPR–3/10 6. Part Markings AT25128B-SSHL Top Mark Seal Year | Seal Week | | | |---|---|---|---|---|---|---|---| A T M L H Y W W |---|---|---|---|---|---|---|---| 5 D B L @ |---|---|---|---|---|---|---|---| * LOT NUMBER |---|---|---|---|---|---|---|---| | PIN 1 INDICATOR (DOT) @ = Country of Y = SEAL YEAR 6: 2006 0: 7: 2007 1: 8: 2008 2: 9: 2009 3: Ass’y 2010 2011 2012 2013 WW 02 04 :: :: 50 52 = = = : : = = SEAL Week Week :::: :::: Week Week WEEK 2 4 : :: 50 52 WW 02 04 :: :: 52 = = = : : = SEAL Week Week :::: :::: Week WEEK 2 4 : :: 52 AT25128B-XHL Top Mark PIN 1 INDICATOR (DOT) | * |---|---|---|---|---|---| A T H Y W W |---|---|---|---|---|---| 5 D B L @ |---|---|---|---|---|---|---| ATMEL L O T N U M B E R |---|---|---|---|---|---|---| @ = Country of Y = SEAL YEAR 8: 2008 2: 9: 2009 3: 0: 2010 4: 1: 2011 5: Ass’y 2012 2013 2014 2015 AT25128B-MAHL Top Mark |---|---|---| 5 D B |---|---|---| H L @ |---|---|---| Y X X |---|---|---| * | PIN 1 INDICATOR (DOT) 14 Y = YEAR OF ASSEMBLY @ = Country of Ass’y XX= ATMEL LOT NUMBER TO COORESPOND WITH TRACE CODE LOG BOOK. (e.g. XX = AA, AB, AC,... AX, AY, AZ) Y = SEAL YEAR 6: 2006 0: 2010 7: 2007 1: 2011 8: 2008 2: 2012 9: 2009 3: 2013 AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B AT25128B-CUL Top Mark |---|---|---|---| 5 D B U |---|---|---|---| B Y M X X |---|---|---|---|---| * <-- PIN 1 INDICATOR B = Y = M = XX= Country of Origin One Digit Year Code One Digit Month Code TRACE CODE (ATMEL LOT NUMBER TO COORESPOND WITH TRACE CODE LOG BOOK) (e.g. XX = AA, AB, AC,... YZ, ZZ) M = SEAL MONTH (USE ALPHA DESIGNATOR A-L) A = JANUARY B = FEBRUARY " " """""""" J = OCTOBER K = NOVEMBER L = DECEMBER Y = ONE DIGIT YEAR CODE 4: 2004 7: 2007 5: 2005 8: 2008 6: 2006 9: 2009 AT25256B-SSHL Top Mark Seal Year | Seal Week | | | |---|---|---|---|---|---|---|---| A T M L H Y W W |---|---|---|---|---|---|---|---| 5 E B L @ |---|---|---|---|---|---|---|---| * LOT NUMBER |---|---|---|---|---|---|---|---| | PIN 1 INDICATOR (DOT) @ = Country of Y = SEAL YEAR 6: 2006 0: 7: 2007 1: 8: 2008 2: 9: 2009 3: Ass’y 2010 2011 2012 2013 WW 02 04 :: :: 50 52 = = = : : = = SEAL Week Week :::: :::: Week Week WEEK 2 4 : : 50 52 AT25256B-XHL Top Mark PIN 1 INDICATOR (DOT) | * |---|---|---|---|---|---| A T H Y W W |---|---|---|---|---|---| 5 E B L @ |---|---|---|---|---|---|---| ATMEL L O T N U M B E R |---|---|---|---|---|---|---| @ = Country of Y = SEAL YEAR 8: 2008 2: 9: 2009 3: 0: 2010 4: 1: 2011 5: Ass’y 2012 2013 2014 2015 WW 02 04 :: :: 52 = = = : : = SEAL Week Week :::: :::: Week WEEK 2 4 : :: 52 15 8698B–SEEPR–3/10 At25256B-MAHL Top Mark |---|---|---| 5 E B |---|---|---| H L @ |---|---|---| Y X X |---|---|---| * | PIN 1 INDICATOR (DOT) Y = YEAR OF ASSEMBLY @ = Country of Ass’y XX= ATMEL LOT NUMBER TO COORESPOND WITH TRACE CODE LOG BOOK. (e.g. XX = AA, AB, AC,... AX, AY, AZ) Y = SEAL YEAR 6: 2006 0: 2010 7: 2007 1: 2011 8: 2008 2: 2012 9: 2009 3: 2013 AT25256B-CUL Top Mark |---|---|---|---| 5 E B U |---|---|---|---| B Y M X X |---|---|---|---|---| * <-- PIN 1 INDICATOR B = Y = M = XX= Country of Origin One Digit Year Code One Digit Month Code TRACE CODE (ATMEL LOT NUMBER TO COORESPOND WITH TRACE CODE LOG BOOK) (e.g. XX = AA, AB, AC,... YZ, ZZ) Y = ONE DIGIT YEAR CODE 4: 2004 7: 2007 5: 2005 8: 2008 6: 2006 9: 2009 16 M = SEAL MONTH (USE ALPHA DESIGNATOR A-L) A = JANUARY B = FEBRUARY " " """""""" J = OCTOBER K = NOVEMBER L = DECEMBER AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 7. Ordering Codes AT25128B Ordering Information Ordering Code Voltage Range Package Operation Range AT25128B-SSHL-B (NiPdAu Lead Finish) AT25128B-SSHL-T(2) (NiPdAu Lead Finish) AT25128B-XHL-B(1) (NiPdAu Lead Finish) AT25128B-XHL-T(2) (NiPdAu Lead Finish) AT25128B-MAHL-T(2) (NiPdAu Lead Finish) AT25128B-CUL-T(2) (SnAgCu Ball Finish) 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 8S1 8S1 8A2 8A2 8MA2 8U2-1 Lead-free/Halogen-free/ Industrial Temperature (−40°C to 85°C) AT25128B-WWU11L(3) 1.8V to 5.5V Die Sale Industrial Temperature (−40°C to 85°C) (1) Notes: 1. Bulk delivery in tubes (SOIC and TSSOP 100/tube). 2. Tape and reel delivery (SOIC 4k/reel. TSSOP, UDFN and VFBGA 5k/reel). 3. Contact Atmel Sales for Wafer sales. Package Type 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8MA2 8-lead, 2.00mm x 3.00mm Body, 0.50 mm Pitch, Dual No Lead Package (UDFN) 8U2-1 8-ball, die Ball Grid Array Package (VFBGA) 17 8698B–SEEPR–3/10 AT25256B Ordering Information Ordering Code Package Voltage Range Operation Range AT25256B-SSHL-B (NiPdAu Lead Finish) AT25256B-SSHL-T(2) (NiPdAu Lead Finish) AT25256B-XHL-B(1) (NiPdAu Lead Finish) AT25256B-XHL-T(2) (NiPdAu Lead Finish) AT25256B-MAHL-T(2) (NiPdAu Lead Finish) AT25256B-CUL-T(2) (SnAgCu Ball Finish) 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 1.8V to 5.5V 8S1 8S1 8A2 8A2 8MA2 8U2-1 Lead-free/Halogen-free/ Industrial Temperature (−40°C to 85°C) AT25256B-WWU11L(3) 1.8V to 5.5V Die Sale Industrial Temperature (−40°C to 85°C) (1) Notes: 1. Bulk delivery in tubes (SOIC and TSSOP 100/tube). 2. Tape and reel delivery (SOIC 4k/reel. TSSOP, UDFN and VFBGA 5k/reel). 3. Contact Atmel Sales for Wafer sales. Package Type 18 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8MA2 8-lead, 2.00mm x 3.00mm Body, 0.50 mm Pitch, Dual No Lead Package (UDFN) 8U2-1 8-ball, die Ball Grid Array Package (VFBGA) AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 8. Packaging Information 8S1 – JEDEC SOIC C GND NC NC NC 4 3 2 1 E 5 6 7 8 SDA SCL NC VCC E1 L Ø Top View e End View b COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D Side View MIN NOM MAX A 1.35 – 1.75 A1 0.10 – 0.25 b 0.31 – 0.51 C 0.17 – 0.25 D 4.80 – 5.05 E1 3.81 – 3.99 E 5.79 – 6.20 e Notes: 1. These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. NOTE 1.27 BSC L 0.40 – 1.27 θ 0˚ – 8˚ 12/11/09 TITLE Package Drawing Contact: [email protected] 8S1, 8-lead, (0.150” Wide Body), Plastic Gull Wing Outline (JEDEC SOIC) GPC SWB DRAWING NO. 8S1 REV. E 19 8698B–SEEPR–3/10 8A2 – TSSOP 4 3 2 1 GND NC NC NC Pin 1 indicator this corner A b E1 E e L1 A2 D Side View SDA SCL NC VCC 5 6 7 8 L Top View End View Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE D 2.90 3.00 13.10 2, 5 3, 5 6.40 BSC E E1 4.30 4.40 4.50 A – – 1.20 A2 0.80 1.00 1.05 b 0.19 – 0.30 e L L1 4 0.65 BSC 0.45 0.75 0.60 1.00 RE3 12/11/09 TITLE Package Drawing Contact: 8A2, 8-lead, 4.4mm Body, Plastic Thin [email protected] Shrink Small Outline Package (TSSOP) 20 GPC TNR DRAWING NO. 8A2 REV. D AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 8MA2 - UDFN E 8 1 Pin 1 ID 2 7 3 6 4 5 D C A2 A A1 E2 b (8x) 8 1 Pin#1 ID (R0.10) 7 0.35 COMMON DIMENSIONS (Unit of Measure = mm) 2 D2 6 3 5 4 e (6x) K L (8x) Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229 for proper dimensions, tolerances, datums, etc. 2. The terminal #1 ID is a laser-marked feature. 3. Dimensions b applies to metalized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area. SYMBOL MIN NOM MAX D 2.00 BSC E 3.00 BSC D2 1.40 1.50 1.60 E2 1.20 1.30 1.40 A 0.50 0.55 0.60 A1 0.00 0.02 0.05 A2 – – 0.55 C L 0.152 REF 0.30 e b K NOTE 0.40 0.35 0.50 BSC 0.18 0.25 0.30 – – 0.20 3 4/15/08 TITLE Package Drawing Contact: 8MA2, 8-pad, 2 x 3 x 0.6 mm Body, Thermally [email protected] Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN) GPC YNZ DRAWING NO. REV. 8MA2 A 21 8698B–SEEPR–3/10 8U2-1 – VFBGA // 0.10 C 0.10 (4X) D A1 Ball Pad Corner 0.08 C C A Øb Ø0.15 M C A B Ø0.08 M C e A1 B A2 A Top View Side View A1 BALL PAD CORNER 2 1 A COMMON DIMENSIONS (Unit of Measure = mm) B e C D (e1) d SYMBOL MIN NOM MAX A 0.81 0.91 1.00 A1 0.15 0.20 0.25 A2 0.40 0.45 0.50 (d1) b 0.25 0.30 0.35 Bottom View D 2.35 BSC 8 SOLDER BALLS E 3.73 BSC e 0.75 BSC e1 0.74 BSC d 0.75 BSC d1 0.80 REF Notes: 1. This drawing is for general information. 2. Dimension 'b' is measured at the maximum solder ball diameter. 3. Solder ball composition shall be 95.5Sn-4.0Ag-.5Cu. NOTE 2/25/08 TITLE 8U2-1, 8 ball, 2.35 x 3.73 mm Body, Package Drawing Contact: [email protected] 0.75 mm pitch, VFBGA Package (dBGA2) 22 GPC GWW DRAWING NO. REV. 8U2-1 C AT25128B/256B 8698B–SEEPR–3/10 AT25128B/256B 9. Revision History Doc. Rev. Date Comments 8698B 03/2010 Update Catalog Numbering Scheme. Update Ordering Information and package types. 8698A 12/2009 Initial document release. 23 8698B–SEEPR–3/10 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Unit 1-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon Hong Kong Tel: (852) 2245-6100 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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