Features • Single 2.7V - 3.6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1- to 64-byte Page Write Operation Low Power Dissipation – 15 mA Active Current – 20 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years JEDEC Approved Byte-wide Pinout Commercial and Industrial Temperature Ranges 256K (32K x 8) Battery-Voltage™ Parallel EEPROMs Description The AT28BV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 µA. (continued) Pin Configurations Pin Name Function A0 - A14 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect PDIP, SOIC Top View A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND PLCC Top View A7 A12 A14 DC VCC WE A13 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 TSOP Top View A8 A9 A11 NC OE A10 CE I/O7 I/O6 I/O1 I/O2 GND DC I/O3 I/O4 I/O5 A6 A5 A4 A3 A2 A1 A0 NC I/O0 AT28BV256 Note: PLCC package pins 1 and 17 are DON’T CONNECT. OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 Rev. 0273G–11/99 1 The AT28BV256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s 28BV256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V 2 AT28BV256 *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability AT28BV256 Device Operation READ: The AT28BV256 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus contention in their system. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of t WC , a read operation will effectively be a polling operation. PAGE WRITE: The page write operation of the AT28BV256 allows 1 to 64 bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 63 additional bytes. Each successive byte must be written within 150 µs (tBLC) of the previous byte. If the tBLC limit is exceeded the AT28BV256 will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A6 - A14 inputs. For each WE high to low transition during the page write operation, A6 - A14 must be the same. The A0 to A5 inputs are used to specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. DATA POLLING: The AT28BV256 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write cycle. TOGGLE BIT: In addition to DATA Polling the AT28BV256 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during the write cycle. DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel has incorporated both hardware and software features that will protect the memory against inadvertent writes. HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28BV256 in the following ways: (a) VCC power-on delay—once VCC has reached 1.8V (typical) the device will automatically time out 10 ms (typical) before allowing a write; (b) write inhibit—holding any one of OE low, CE high or WE high inhibits write cycles; and (c) noise filter—pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle. SOFTWARE DATA PROTECTION: A software-controlled data protection feature has been implemented on the AT28BV256. Software data protection (SDP) helps prevent inadvertent writes from corrupting the data in the device. SDP can prevent inadvertent writes during power-up and power-down as well as any other potential periods of system instability. The AT28BV256 can only be written using the software data protection feature. A series of three write commands to specific addresses with specific data must be presented to the device before writing in the byte or page mode. The same three write commands must begin each write operation. All software write commands must obey the page mode write timing specifications. The data in the 3-byte command sequence is not written to the device; the address in the command sequence can be utilized just like any other location in the device. Any attempt to write to the device without the 3-byte sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, read operations will effectively be polling operations. DEVICE IDENTIFICATION: An extra 64 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH the additional bytes may be written to or read from in the same manner as the regular memory array. 3 DC and AC Operating Range Com. Operating Temperature (Case) Ind. VCC Power Supply AT28BV256-20 AT28BV256-25 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C 2.7V - 3.6V 2.7V - 3.6V Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN High Z Write (2) Standby/Write Inhibit (1) VIH X X Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z VIL High Z Chip Erase Notes: VIL VH (3) 1. X can be VIL or VIH. 2. Refer to AC programming waveforms. 3. VH = 12.0V ± 0.5V. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Max Units VIN = 0V to VCC + 1V 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA Com. 20 ISB VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V µA Ind. 50 µA ICC VCC Active Current f = 5 MHz; IOUT = 0 mA 15 mA VIL Input Low Voltage 0.6 V VIH Input High Voltage VOL Output Low Voltage IOL = 1.6 mA VOH Output High Voltage IOH = -100 µA 4 Min 2.0 AT28BV256 V 0.3 2.0 V V AT28BV256 AC Read Characteristics Symbol Parameter tACC AT28BV256-20 AT28BV256-25 Min Min Max Max Units Address to Output Delay 200 250 ns (1) CE to Output Delay 200 250 ns (2) OE to Output Delay 0 80 0 100 ns tDF(3)(4) CE or OE to Output Float 0 55 0 60 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE tOE 0 ns AC Read Waveforms(1)(2)(3)(4) tCE tOE tDF tOH tACC Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Output Test Load Input Test Waveforms and Measurement Level tR, tF < 20 ns Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol CIN COUT Note: Typ Max Units Conditions 4 6 pF VIN = 0V 8 12 pF VOUT = 0V 1. This parameter is characterized and is not 100% tested. 5 AC Write Characteristics Symbol Parameter tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 200 ns tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns tDV Note: Min (1) Time to Data Valid NR 1. NR = No Restriction. AC Write Waveforms WE Controlled tOES tAS tOEH tAH tCH tCS tWPH tWP tDV tDH tDS CE Controlled tOES tAS tOEH tAH tCH tCS tWPH tWP tDV 6 AT28BV256 tDS tDH Max Units AT28BV256 Page Mode Characteristics Symbol Parameter Min Max Units tWC Write Cycle Time 10 ms tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 200 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 100 µs ns Programming Algorithm LOAD DATA AA TO ADDRESS 5555 Notes for software program code: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 2. Data protect state will be re-activated at the end of program cycle. 3. 1 to 64 bytes of data are loaded. WRITES ENABLED(2) LOAD DATA XX TO ANY ADDRESS(3) LOAD LAST BYTE TO LAST ADDRESS(3) ENTER DATA PROTECT STATE Software Protected Program Cycle Waveforms(1)(2)(3) tWP tAS tAH tWPH tBLC tDH tDS tWC Notes: 1. A0 - A14 must conform to the addressing sequence for the first three bytes as shown above. 2. A6 through A14 must specify the same page address during each high to low transition of WE (or CE) after the software code has been entered. 3. OE must be high only when WE and CE are both low. 7 DATA Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Max OE to Output Delay tWR Write Recovery Time Units 0 ns 0 ns (2) tOE Notes: Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See “AC Read Characteristics” on page 5. DATA Polling Waveforms tOEH tDH tWR tOE Toggle Bit Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min OE to Output Delay tOEHP OE High Pulse tWR 10 ns ns Write Recovery Time 150 ns 0 ns 1. These parameters are characterized and not 100% tested. Toggle Bit Waveforms tOEH tDH tOE tWR 8 Units ns 2. See “AC Read Characteristics” on page 5. Notes: Max 10 (2) tOE Notes: Typ 1. Toggling either OE or CE or both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. AT28BV256 AT28BV256 9 Ordering Information(1) ICC (mA) tACC (ns) Active Standby Ordering Code Package Operation Range 200 15 0.02 AT28BV256-20JC AT28BV256-20PC AT28BV256-20SC AT28BV256-20TC 32J 28P6 28S 28T Commercial (0° to 70°C) 15 0.02 AT28BV256-20JI AT28BV256-20PI AT28BV256-20SI AT28BV256-20TI 32J 28P6 28S 28T Industrial (-40° to 85°C) 15 0.02 AT28BV256-25JC AT28BV256-25PC AT28BV256-20SC AT28BV256-25TC 32J 28P6 28S 28T Commercial (0° to 70°C) 15 0.02 AT28BV256-25JI AT28BV256-25PI AT28BV256-20SI AT28BV256-25TI 32J 28P6 28S 28T Industrial (-40° to 85°C) 250 Note: 1. See Valid Part Numbers table below. Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28BV256 20 JC, JI, PC, PI, SC, SI, TC, TI AT28BV256 25 JC, JI, PC, PI, SC, SI, TC, TI Die Products Reference Section: Parallel EEPROM Die Products Package Type 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 10 AT28BV256 AT28BV256 Packaging Information 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-016 AE 28P6, 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-011 AB .045(1.14) X 45˚ PIN NO. 1 IDENTIFY .553(14.0) .547(13.9) .595(15.1) .585(14.9) .032(.813) .026(.660) .050(1.27) TYP 1.47(37.3) 1.44(36.6) .025(.635) X 30˚ - 45˚ .012(.305) .008(.203) .300(7.62) REF .430(10.9) .390(9.90) AT CONTACT POINTS PIN 1 .530(13.5) .490(12.4) .566(14.4) .530(13.5) .021(.533) .013(.330) .030(.762) .015(.381) .095(2.41) .060(1.52) .140(3.56) .120(3.05) .022(.559) X 45˚ MAX (3X) .453(11.5) .447(11.4) .495(12.6) .485(12.3) 28S, 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) Dimensions in Inches and (Millimeters) .090(2.29) MAX 1.300(33.02) REF .220(5.59) MAX .005(.127) MIN SEATING PLANE .065(1.65) .015(.381) .022(.559) .014(.356) .161(4.09) .125(3.18) .110(2.79) .090(2.29) .012(.305) .008(.203) .065(1.65) .041(1.04) .630(16.0) .590(15.0) 0 REF 15 .690(17.5) .610(15.5) 28T, 28-lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* INDEX MARK AREA 11.9 (0.469) 11.7 (0.461) 13.7 (0.539) 13.1 (0.516) 0.27 (0.011) 0.18 (0.007) 0.55 (0.022) BSC 7.15 (0.281) REF 8.10 (0.319) 7.90 (0.311) 1.25 (0.049) 1.05 (0.041) 0.20 (0.008) 0.10 (0.004) 0 5 REF 0.20 (0.008) 0.15 (0.006) 0.70 (0.028) 0.30 (0.012) 11 Atmel Headquarters Atmel Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759 Atmel Rousset Atmel U.K., Ltd. Coliseum Business Centre Riverside Way Camberley, Surrey GU15 3YL England TEL (44) 1276-686-677 FAX (44) 1276-686-697 Zone Industrielle 13106 Rousset Cedex France TEL (33) 4-4253-6000 FAX (33) 4-4253-6001 Asia Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan Atmel Japan K.K. 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 Fax-on-Demand North America: 1-(800) 292-8635 International: 1-(408) 441-0732 e-mail [email protected] Web Site http://www.atmel.com BBS 1-(408) 436-4309 © Atmel Corporation 1999. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life suppor t devices or systems. Marks bearing ® and/or ™ are registered trademarks and trademarks of Atmel Corporation. Terms and product names in this document may be trademarks of others. Printed on recycled paper. 0273G–11/99/xM