IRF AUIRS2336STR

October 11, 2010
Automotive Grade
AUIRS2336S
3-PHASE BRIDGE DRIVER IC
Features
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Drives up to six IGBT/MOSFET power devices
Gate drive supplies up to 20 V per channel
Over-current protection
Over-temperature shutdown input
Advanced input filter
Integrated deadtime protection
Shoot-through (cross-conduction) protection
Undervoltage lockout for VCC & VBS
Enable/disable input and fault reporting
Adjustable fault clear timing
Separate logic and power grounds
3.3 V input logic compatible
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays for all channels
-40°C to 125°C operating range
RoHS compliant
Lead-Free
Automotive qualified*
Product Summary
Topology
3 Phase
VOFFSET
≤ 600 V
VOUT
Io+ & I o- (typical)
10 V – 20 V
200 mA & 350 mA
tON & tOFF (typical)
530 ns & 530 ns
Deadtime (typical)
275 ns
Package Options
28-Lead SOIC Wide Body
Typical Applications
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HVAC compressor
Brushless automotive applications
Typical Connection Diagram
* Qualification standards can be found on IR’s web site www.irf.com
© 2009 International Rectifier
AUIRS2336S
Table of Contents
Page
Description
3
Qualification Information
4
Absolute Maximum Ratings
5
Recommended Operating Conditions
6
Static Electrical Characteristics
7-8
Dynamic Electrical Characteristics
9
Functional Block Diagram
10
Input/Output Pin Equivalent Circuit Diagram
11
Lead Definitions
12
Lead Assignments
13
Application Information and Additional Details
14-29
Parameter Temperature Trends
30-33
Package Details
34
Tape and Reel Details
35
Part Marking Information
36
Ordering Information
36
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© 2009 International Rectifier
2
AUIRS2336S
Description
The AUIRS2336S are high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and
three low-side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost
bootstrap power supplies. Proprietary HVIC and latch immune CMOS technologies have been implemented in a
rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs (down
to 3.3 V logic). A current trip function which terminates all six outputs can be derived from an external current
sense resistor. Enable functionality is available to terminate all six outputs simultaneously. An open-drain
FAULT signal is provided to indicate that a fault (e.g., over-current, over-temperature, or undervoltage shutdown
event) has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC
network connected to the RCIN input. The output drivers feature a high-pulse current buffer stage designed for
minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime circuitry have
been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency
applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side
configuration, which operate up to 600 V.
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3
AUIRS2336S
Qualification Information†
Automotive
(per AEC-Q100††)
Comments: This family of ICs has passed an Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Qualification Level
MSL3††† 260°C
(per IPC/JEDEC J-STD-020)
Moisture Sensitivity Level
Class M2 (200V)
(per AEC-Q100-003)
Class H1C (1500V)
(per AEC-Q100-002)
Class C4 (1000V)
(per AEC-Q100-011)
Class II Level A
(per AEC-Q100-004)
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Exceptions to AEC-Q100 requirements are noted in the qualification report.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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© 2009 International Rectifier
4
AUIRS2336S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. These are
stress ratings only, functional operation of the device at these or any other condition beyond those indicated in the
“Recommended Operating Condition” is not implied. Exposure to absolute maximum-rated conditions for extended
periods may affect device reliability. All voltage parameters are absolute voltages referenced to VSS unless otherwise
stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Voltage clamps are included between VCC & COM (25 V), VCC & VSS (20 V), and VB & VS (20 V).
Symbol
VCC
VIN
VRCIN
VB
VS
VHO
VLO
VFLT
COM
dVS/dt
PWHIN
PD
RthJA
TJ
TS
TL
†
Definition
Low side supply voltage
Logic input voltage (HIN, LIN, ITRIP, EN)
RCIN input voltage
High-side floating well supply voltage
High-side floating well supply return voltage
Floating gate drive output voltage
Low-side output voltage
Fault output voltage
Power ground
Allowable VS offset supply transient relative to VSS
High-side input pulse width
Package power dissipation @ TA ≤+25ºC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min
-0.3
VSS-0.3
VSS-0.3
-0.3
†
VB-20
VS-0.3
COM-0.3
VSS-0.3
VCC-25
—
500
—
—
—
-55
—
Max
†
20
VSS+5.2
VCC+0.3
†
620
VB+0.3
VB+0.3
VCC+0.3
VCC+0.3
VCC+0.3
50
—
1.6
78
150
150
300
Units
V
V/ns
ns
W
ºC/W
ºC
All supplies are tested at 25 V. An internal 20 V clamp exists for each supply.
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5
AUIRS2336S
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are
absolute voltages referenced to VSS unless otherwise stated in the table. The offset rating is tested with supplies of
(VCC-COM) = (VB-VS) = 15 V.
Symbol
VCC
VIN
VB
VS
VS(t)
VHO
VLO
COM
VFLT
VRCIN
VITRIP
TA
†
††
Definition
Low-side supply voltage
HIN, LIN, & EN input voltage
High-side floating well supply voltage
†
High-side floating well supply offset voltage
††
Transient high-side floating supply voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
FAULT output voltage
RCIN input voltage
ITRIP input voltage
Ambient temperature
Min
10
VSS
VS+10
COM-8
-50
Vs
COM
-5
VSS
VSS
VSS
-40
Max
20
VSS+5
VS+20
600
600
VB
VCC
5
VCC
VCC
VSS+5
125
Units
V
ºC
Logic operation for VS of –8 V to 600 V. Logic state held for VS of –8 V to –VBS.
Operational for transient negative VS of VSS - 50 V with a 50 ns pulse width. Guaranteed by design. Refer to
the Application Information section of this datasheet for more details.
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AUIRS2336S
Static Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤ 125°C
with bias conditions of (VCC-COM) = (VB-VS) = 15 V. The VIN and IIN parameters are referenced to VSS and are
applicable to all six channels. The VO and IO parameters are referenced to respective VS and COM and are
applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to VSS. The VBSUV
parameters are referenced to VS.
Symbol
Definition
Min
Typ
Max
VCCUV+
VCC supply undervoltage positive going threshold
8
8.9
9.8
VCCUV-
VCC supply undervoltage negative going
threshold
7.4
8.2
9
VCCUVHY
VCC supply undervoltage hysteresis
0.3
0.7
—
VBSUV+
VBS supply undervoltage positive going threshold
8
8.9
9.8
VBSUV-
VBS supply undervoltage negative going
threshold
7.4
8.2
9
VBS supply undervoltage hysteresis
0.3
0.7
—
ILK
IQBS
High-side floating well offset supply leakage
Quiescent VBS supply current
—
—
—
70
50
120
µA
IQCC
Quiescent VCC supply current
—
2
3
mA
VOH
VOL
High level output voltage drop, VBIAS-VO
Low level output voltage drop, VO
—
—
0.90
0.40
1.5
0.6
V
V
IO= 20 mA
Io+
Output high short circuit pulsed current
75
200
—
mA
Io-
Output low short circuit pulsed current
VO=0 V,VIN=0 V,
PW ≤ 10 µs
VO=15 V,VIN=5 V,
PW ≤ 10 µs
VBSUVHY
VIH
VIL
VIN,CLAMP
IHIN+
IHINILIN+
ILINVRCIN,TH
VRCIN,HY
IRCIN
RON,RCIN
Logic “0” input voltage
Logic “1” input voltage
Logic “1” input voltage
Logic “0” input voltage
Input voltage clamp
(HIN, LIN, ITRIP and EN)
Input bias current (HO = High)
Input bias current (HO = Low)
Input bias current (LO = High)
Input bias current (LO = Low)
RCIN positive going threshold
RCIN hysteresis
RCIN input bias current
RCIN low on resistance
150
350
—
2.5
—
—
Units
Test Conditions
V
NA
VB = VS = 600 V
All inputs are in the
off state
NA
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V
—
—
0.8
4.8
5.2
5.65
IIN = 100 µA
—
—
—
—
—
—
—
—
150
110
150
110
8
3
—
50
200
150
200
150
—
—
1
100
µA
VIN = 0 V
VIN = 4 V
VIN = 0 V
VIN = 4 V
V
NA
µA
Ω
VRCIN = 0 V or 15 V
I = 1.5 mA
© 2009 International Rectifier
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AUIRS2336S
Static Electrical Characteristics (continued)
Symbol
Definition
Min
Typ
Max
VIT,TH+
ITRIP positive going threshold
0.37
0.46
0.55
VIT,TH-
ITRIP negative going threshold
—
0.4
—
VIT,HYS
ITRIP hysteresis
—
0.07
—
IITRIP+
“High” ITRIP input bias current
—
5
20
“Low” ITRIP input bias current
—
—
1
VEN,TH+
Enable positive going threshold
—
—
2.5
VEN,TH-
Enable negative going threshold
0.8
—
—
IEN+
“High” enable input bias current
“Low” enable input bias current
5
—
20
IEN-
—
—
—
50
100
IITRIP-
RON,FLT
FAULT low on resistance
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1
Units
Test Conditions
V
NA
µA
V
µA
Ω
VIN = 4 V
VIN = 0 V
NA
VIN = 4 V
VIN = 0 V
I = 1.5 mA
© 2009 International Rectifier
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AUIRS2336S
Dynamic Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤125°C
with bias conditions of VCC= VB = 15 V, VS = VSS = COM, TA = 25oC, and CL = 1000 pF. The dynamic electrical
characteristics are measured using the test definitions shown in Figure .
Symbol
tON
tOFF
tR
tF
tFIL,IN
tEN
tFILTER,EN
tFLTCLR
tITRIP
tBL
tFLT
DT
MDT
MT
PM
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
†
Input filter time
(HIN, LIN, ITRIP)
Enable low to output shutdown
propagation delay
Enable input filter time
FAULT clear time
RCIN: R = 2 MΩ, C = 1 nF
ITRIP to output shutdown
propagation delay
ITRIP blanking time
ITRIP to FAULT propagation delay
Deadtime
††
DT matching
Delay matching time (tON, tOFF)
Pulse width distortion
†††
††
Min
400
400
—
—
Typ
530
530
125
50
Max
750
750
320
120
Units
Test Conditions
200
350
510
350
460
650
VIN, VEN = 0 V or 5 V
100
200
—
1
1.65
2.5
NA
VIN = 0 V or 5 V
VITRIP = 0 V
500
750
1200
VITRIP = 5 V
—
400
190
—
400
600
275
—
—
950
420
100
—
—
50
—
—
100
VIN = 0 V or 5 V
VITRIP = 5 V
VIN = 0 V & 5 V without
external deadtime
VIN = 0 V & 5 V with external
deadtime larger than DT
PW input=10 µs
VIN = 0 V & 5 V
ns
ms
ns
†
The minimum width of the input pulse is recommended to exceed 500 ns to ensure the filtering time of the
input filter is exceeded.
†† This parameter applies to all of the channels. Please see the application section for more details.
††† PM is defined as PWIN - PWOUT.
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9
AUIRS2336S
Functional Block Diagram:
AUIRS2336
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10
AUIRS2336S
Input/Output Pin Equivalent Circuit Diagrams:
VCC
ESD
Diode
ITRIP
or EN
ESD
Diode
RPD
VSS
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11
AUIRS2336S
Lead Definitions:
Symbol
Description
VCC
VSS
VB1
VB2
VB3
VS1
VS2
VS3
HIN1/N
HIN2/N
HIN3/N
LIN1/N
LIN2/N
LIN3/N
HO1
HO2
HO3
LO1
LO2
LO3
COM
Low-side supply voltage
Logic ground
High-side gate drive floating supply (phase 1)
High-side gate drive floating supply (phase 2)
High-side gate drive floating supply (phase 3)
High voltage floating supply return (phase 1)
High voltage floating supply return (phase 2)
High voltage floating supply return (phase 3)
Logic inputs for high-side gate driver outputs (phase 1); input is out-of-phase with output
Logic inputs for high-side gate driver outputs (phase 2); input is out-of-phase with output
Logic inputs for high-side gate driver outputs (phase 3); input is out-of-phase with output
Logic inputs for low-side gate driver outputs (phase 1); input is out-of-phase with output
Logic inputs for low-side gate driver outputs (phase 2); input is out-of-phase with output
Logic inputs for low-side gate driver outputs (phase 3); input is out-of-phase with output
High-side driver outputs (phase 1)
High-side driver outputs (phase 2)
High-side driver outputs (phase 3)
Low-side driver outputs (phase 1)
Low-side driver outputs (phase 2)
Low-side driver outputs (phase 3)
Low-side gate drive return
Indicates over-current, over-temperature (ITRIP), or low-side undervoltage lockout has occurred.
This pin has negative logic and an open-drain output. The use of over-current and overtemperature protection requires the use of external components.
Logic input to shutdown functionality. Logic functions when EN is high (i.e., positive logic). No
effect on FAULT and not latched.
Analog input for over-current shutdown. When active, ITRIP shuts down outputs and activates
FAULT and RCIN low. When ITRIP becomes inactive, FAULT stays active low for an externally
set time tFLTCLR, then automatically becomes inactive (open-drain high impedance).
An external RC network input used to define the FAULT CLEAR delay (tFLTCLR) approximately
equal to R*C. When RCIN > 8 V, the FAULT pin goes back into an open-drain high-impedance
state.
FAULT/N
EN
ITRIP
RCIN
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12
AUIRS2336S
Lead Assignments
SOIC-28L Wide Body
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AUIRS2336S
Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Enable Input
Fault Reporting and Programmable Fault Clear Timer
Over-Current Protection
Over-Temperature Shutdown Protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Advanced Input Filter
Short-Pulse / Noise Rejection
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Tolerant to Negative VS Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The AUIRS2336S HVICs are designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is
defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes
generically called VOUT and in this case does not differentiate between the high-side or low-side output voltage.
VB
(or VCC)
VB
(or VCC)
IO+
HO
(or LO)
HO
(or LO)
+
VHO (or VLO)
VS
(or COM)
-
IO-
VS
(or COM)
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
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AUIRS2336S
Switching and Timing Relationships
The relationship between the input and output signals of the AUIRS2336S is illustrated below in Figures 3. From
these figures, we can see the definitions of several timing parameters (i.e., PWIN, PWOUT, tON, tOFF, tR, and tF)
associated with this device.
Figure 3: Switching time waveforms
The following two figures illustrate the timing relationships of some of the functionality of the AUIRS2336S; this
functionality is described in further detail later in this document.
During interval A of Figure 5, the HVIC has received the command to turn-on both the high- and low-side switches at
the same time; as a result, the shoot-through protection of the HVIC has prevented this condition and both the highand low-side output are held in the off state.
Interval B of Figures 5 and 6 shows that the signal on the ITRIP input pin has gone from a low to a high state; as a
result, all of the gate drive outputs have been disabled (i.e., see that HOx has returned to the low state; LOx is also
held low), the voltage on the RCIN pin has been pulled to 0 V, and a fault is reported by the FAULT output
transitioning to the low state. Once the ITRIP input has returned to the low state, the output will remain disabled and
the fault condition reported until the voltage on the RCIN pin charges up to VRCIN,TH (see interval C in Figure 6); the
charging characteristics are dictated by the RC network attached to the RCIN pin.
During intervals D and E of Figure 5, we can see that the enable (EN) pin has been pulled low (as is the case when
the driver IC has received a command from the control IC to shutdown); this results in the outputs (HOx and LOx)
being held in the low state until the enable pin is pulled high.
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15
AUIRS2336S
A
B
C
D
E
HINx
LINx
EN
ITRIP
FAULT
RCIN
HOx
LOx
Figure 5: Input/output timing diagram for AUIRS2336S
Figure 6: Detailed view of B & C intervals
Deadtime
This HVIC features integrated deadtime protection circuitry. The deadtime for this ICs is fixed; other ICs within IR’s
HVIC portfolio feature programmable deadtime for greater design flexibility. The deadtime feature inserts a time
period (a minimum deadtime) in which both the high- and low-side power switches are held off; this is done to ensure
that the power switch being turned off has fully turned off before the second power switch is turned on. This
minimum deadtime is automatically inserted whenever the external deadtime is shorter than DT; external deadtimes
larger than DT are not modified by the gate driver. Figure 7 illustrates the deadtime period and the relationship
between the output gate signals.
The deadtime circuitry of the AUIRS2336S is matched with respect to the high- and low-side outputs of a given
channel; additionally, the deadtimes of each of the three channels are matched. Figure 7 defines the two deadtime
parameters (i.e., DT1 and DT2) of a specific channel; the deadtime matching parameter (MDT) associated with the
AUIRS2336S specifies the maximum difference between DT1 and DT2. The MDT parameter also applies when
comparing the DT of one channel of the AUIRS2336S to that of another.
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AUIRS2336S
LINx
HINx
50%
LOx
50%
DT
HOx
DT
50%
50%
Figure 7: Illustration of deadtime
Matched Propagation Delays
The AUIRS2336S is designed with propagation delay matching circuitry. With this feature, the IC’s response at the
output to a signal at the input requires approximately the same time duration (i.e., tON, tOFF) for both the low-side
channels and the high-side channels; the maximum difference is specified by the delay matching parameter (MT).
Additionally, the propagation delay for each low-side channel is matched when compared to the other low-side
channels and the propagation delays of the high-side channels are matched with each other; the MT specification
applies as well. The propagation turn-on delay (tON) of the AUIRS2336S is matched to the propagation turn-on delay
(tOFF).
Input Logic Compatibility
The inputs of this IC are compatible with standard CMOS and TTL outputs. The AUIRS2336S has been designed to
be compatible with 3.3 V and 5 V logic-level signals. It features an integrated 5.2 V Zener clamp on the HIN, LIN,
ITRIP, and EN pins; Figure 8 illustrates an input signal, its input threshold values, and the logic state of the IC as a
result of the input signal.
V IL
L e v el
I n p ut L o gic
I n p ut Si g n al
V IH
High
Low
Low
Figure 8: HIN & LIN input thresholds
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AUIRS2336S
Undervoltage Lockout Protection
This IC provides undervoltage lockout protection on both the VCC (logic and low-side circuitry) power supply and the
VBS (high-side circuitry) power supply. Figure 9 is used to illustrate this concept; VCC (or VBS) is plotted over time and
as the waveform crosses the UVLO threshold (VCCUV+/- or VBSUV+/-) the undervoltage protection is enabled or
disabled.
Upon power-up, should the VCC voltage fail to reach the VCCUV+ threshold, the IC will not turn-on. Additionally, if the
VCC voltage decreases below the VCCUV- threshold during operation, the undervoltage lockout circuitry will recognize
a fault condition and shutdown the high- and low-side gate drive outputs, and the FAULT pin will transition to the low
state to inform the controller of the fault condition.
Upon power-up, should the VBS voltage fail to reach the VBSUV threshold, the IC will not turn-on the high-side gate
drive output. Additionally, if the VBS voltage decreases below the VBSUV threshold during operation, the undervoltage
lockout circuitry will recognize a fault condition, and shutdown the high-side gate drive outputs of the IC.
The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is
sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could be
driven with a low voltage, resulting in the power switch conducting current while the channel impedance is high; this
could result in very high conduction losses within the power device and could lead to power device failure.
Figure 9: UVLO protection
Shoot-Through Protection
The AUIRS2336S is equipped with shoot-through protection circuitry (also known as cross-conduction prevention
circuitry). Figure 10 shows how this protection circuitry prevents both the high- and low-side switches from
conducting at the same time. Table 1 illustrates the input/output relationship of the devices in the form of a truth
table.
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AUIRS2336S
Shoot- through
protection enabled
HIN
LIN
HO
LO
Figure 10: Illustration of shoot-through protection circuitry
HIN
LIN
HO
LO
0
0
0
0
0
1
1
0
1
0
0
1
1
1
0
0
Table 1: Input/output truth table
Enable Input
The AUIRS2336S is equipped with an enable input pin that is used to shutdown or enable the HVIC. When the EN
pin is in the high state the HVIC is able to operate normally (assuming no other fault conditions). When a condition
occurs that should shutdown the HVIC, the EN pin should see a low logic state. The enable circuitry of the
AUIRS2336S features an input filter; the minimum input duration is specified by tFILTER,EN. Please refer to the EN pin
parameters VEN,TH+, VEN,TH-, and IEN for the details of its use. Table 2 gives a summary of this pin’s functionality and
Figure 11 illustrates the outputs’ response to a shutdown command.
Enable Input
Enable input high
Outputs enabled*
Enable input low
Outputs disabled
Table 2: Enable functionality truth table
(*assumes no other fault condition)
Figure 11: Output enable timing waveform
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19
AUIRS2336S
Fault Reporting and Programmable Fault Clear Timer
The AUIRS2336S provides an integrated fault reporting output and an adjustable fault clear timer. There are two
situations that would cause the HVIC to report a fault via the FAULT pin. The first is an undervoltage condition of
VCC and the second is if the ITRIP pin recognizes a fault. Once the fault condition occurs, the FAULT pin is internally
pulled to VSS. The fault clear timer is activated only if ITRIP pin recognizes a fault: in this case the fault output stays
in the low state until the fault condition has been removed and the fault clear timer expires; once the fault clear timer
expires, the voltage on the FAULT pin will return to VCC.
The length of the fault clear time period (tFLTCLR) is determined by exponential charging characteristics of the
capacitor where the time constant is set by RRCIN and CRCIN. In Figure 12 where we see that a fault condition has
occurred (UVLO or ITRIP), RCIN and FAULT are pulled to VSS, and once the fault has been removed, the fault clear
timer begins. Figure 13 shows that RRCIN is connected between the VCC and the RCIN pin, while CRCIN is placed
between the RCIN and VSS pins.
Figure 12: RCIN and FAULT pin waveforms
Figure 13: Programming the fault clear timer
The design guidelines for this network are shown in Table 3.
≤1 nF
CRCIN
Ceramic
0.5 MΩ to 2 MΩ
RRCIN
>> RON,RCIN
Table 3: Design guidelines
The length of the fault clear time period can be determined by using the formula below.
vC(t) = Vf(1-e-t/RC)
tFLTCLR = -(RRCINCRCIN)ln(1-VRCIN,TH/VCC)
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© 2009 International Rectifier
20
AUIRS2336S
Over-Current Protection
The AUIRS2336S is equipped with an ITRIP input pin. This functionality can be used to detect over-current events
in the DC- bus. Once the HVIC detects an over-current event through the ITRIP pin, the outputs are shutdown, a
fault is reported through the FAULT pin, and RCIN is pulled to VSS.
The level of current at which the over-current protection is initiated is determined by the resistor network (i.e., R0, R1,
and R2) connected to ITRIP as shown in Figure 14, and the ITRIP threshold (VIT,TH+). The circuit designer will need
to determine the maximum allowable level of current in the DC- bus and select R0, R1, and R2 such that the voltage
at node VX reaches the over-current threshold (VIT,TH+) at that current level.
VIT,TH+ = R0IDC-(R1/(R1+R2))
Vcc
HIN(x3)
VB ( x3)
LIN(x3)
HO( x3)
EN
VS (x3)
FAULT
RCIN
LO(x3)
ITRIP
COM
VSS
VX
R1
R2
R0
IDC-
Figure 14: Programming the over-current protection
For example, a typical value for resistor R0 could be 50 mΩ. The voltage of the ITRIP pin should not be allowed to
exceed 5 V; if necessary, an external voltage clamp may be used.
Over-Temperature Shutdown Protection
The ITRIP input of the AUIRS2336S can also be used to detect over-temperature events in the system and initiate a
shutdown of the HVIC (and power switches) at that time. In order to use this functionality, the circuit designer will
need to design the resistor network as shown in Figure 15 and select the maximum allowable temperature.
This network consists of a thermistor and two standard resistors R3 and R4. As the temperature changes, the
resistance of the thermistor will change; this will result in a change of voltage at node VX. The resistor values should
be selected such the voltage VX should reach the threshold voltage (VIT,TH+) of the ITRIP functionality by the time that
the maximum allowable temperature is reached. The voltage of the ITRIP pin should not be allowed to exceed 5 V.
When using both the over-current protection and over-temperature protection with the ITRIP input, OR-ing diodes
(e.g., DL4148) can be used. This network is shown in Figure 16; the OR-ing diodes have been labeled D1 and D2.
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© 2009 International Rectifier
21
AUIRS2336S
Figure 15: Programming over-temperature
protection
Figure 16: Using over-current protection and overtemperature protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Table 4 provides the truth table for the AUIRS2336S. The first line shows that the UVLO for VCC has been tripped;
the FAULT output has gone low and the gate drive outputs have been disabled. VCCUV is not latched in this case and
when VCC is greater than VCCUV, the FAULT output returns to the high impedance state.
The second case shows that the UVLO for VBS has been tripped and that the high-side gate drive outputs have been
disabled. After VBS exceeds the VBSUV threshold, HO will stay low until the HVIC input receives a new falling
transition of HIN. The third case shows the normal operation of the HVIC. The fourth case illustrates that the ITRIP
trip threshold has been reached and that the gate drive outputs have been disabled and a fault has been reported
through the fault pin. In the last case, the HVIC has received a command through the EN input to shutdown; as a
result, the gate drive outputs have been disabled.
UVLO VCC
UVLO VBS
Normal operation
ITRIP fault
EN command
VCC
<VCCUV
15 V
15 V
15 V
15 V
VBS
—
<VBSUV
15 V
15 V
15 V
ITRIP
—
0V
0V
>VITRIP
0V
EN
—
5V
5V
5V
0V
RCIN
High
High
High
Low
High
FAULT
0
High impedance
High impedance
0
High impedance
LO
0
LIN
LIN
0
0
HO
0
0
HIN
0
0
Table 4: UVLO, ITRIP, EN, RCIN, & FAULT truth table
Advanced Input Filter
The advanced input filter allows an improvement in the input/output pulse symmetry of the HVIC and helps to reject
noise spikes and short pulses. This input filter has been applied to the HIN, LIN, and EN inputs. The working
principle of the new filter is shown in Figures 17 and 18.
Figure 17 shows a typical input filter and the asymmetry of the input and output. The upper pair of waveforms
(Example 1) show an input signal with a duration much longer then tFIL,IN; the resulting output is approximately the
difference between the input signal and tFIL,IN. The lower pair of waveforms (Example 2) show an input signal with a
duration slightly longer then tFIL,IN; the resulting output is approximately the difference between the input signal and
tFIL,IN.
Figure 18 shows the advanced input filter and the symmetry between the input and output. The upper pair of
waveforms (Example 1) show an input signal with a duration much longer then tFIL,IN; the resulting output is
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© 2009 International Rectifier
22
AUIRS2336S
approximately the same duration as the input signal. The lower pair of waveforms (Example 2) show an input signal
with a duration slightly longer then tFIL,IN; the resulting output is approximately the same duration as the input signal.
Figure 17: Typical input filter
Figure 18: Advanced input filter
Short-Pulse / Noise Rejection
Example 2
Example 1
This device’s input filter provides protection against short-pulses (e.g., noise) on the input lines. If the duration of the
input signal is less than tFIL,IN, the output will not change states. Example 1 of Figure 19 shows the output in the high
state with input positive noise spikes of durations less than tFIL,IN; the output does not change states. Example 2 of
Figure 19 shows the output in the low state with input negative noise spikes of durations less than tFIL,IN; the output
does not change states.
Figure 19: Noise rejecting input filters
Figures 20 and 21 present lab data that illustrates the characteristics of the input filters while receiving ON and OFF
pulses.
The input filter characteristic is shown in Figure 20; the left side illustrates the narrow pulse ON (short negative
pulse) characteristic while the left shows the narrow pulse OFF (short positive pulse) characteristic. The x-axis of
Figure 20 shows the duration of PWIN, while the y-axis shows the resulting PWOUT duration. It can be seen that for a
PWIN duration less than tFIL,IN, that the resulting PWOUT duration is zero (e.g., the filter rejects the input signal/noise).
We also see that once the PWIN duration exceed tFIL,IN, that the PWOUT durations mimic the PWIN durations very well
over this interval with the symmetry improving as the duration increases. To ensure proper operation of the HVIC, it
is suggested that the input pulse width for the high-side inputs be ≥ 500 ns.
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© 2009 International Rectifier
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AUIRS2336S
The difference between the PWOUT and PWIN signals of both the narrow ON and narrow OFF cases is shown in
Figure 21; the careful reader will note the scale of the y-axis. The x-axis of Figure 21 shows the duration of PWIN,
while the y-axis shows the resulting PWOUT–PWIN duration. This data illustrates the performance and near symmetry
of this input filter.
Narrow Pulse OFF
1000
PWOUT
PWIN
Time (ns)
800
600
400
200
0
0
200
400
600
800
1000
Time (ns)
Figure 20: input filter characteristic
Figure 21: Difference between the input pulse and the output pulse
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© 2009 International Rectifier
24
AUIRS2336S
Bootstrap Power Supply Design
For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode)
please refer to Design Tip 04-4 (DT04-4) entitled “Using Monolithic High Voltage Gate Drivers.” This design tip is
available at www.irf.com.
Separate Logic and Power Grounds
The AUIRS2336S has separate logic and power ground pin (VSS and COM respectively) to eliminate some of the
noise problems that can occur in power conversion applications. Current sensing shunts are commonly used in
many applications for power inverter protection (i.e., over-current protection), and in the case of motor drive
applications, for motor current measurements. In these situations, it is often beneficial to separate the logic and
power grounds.
Figure 24 shows a HVIC with separate VSS and COM pins and how these two grounds are used in the system. The
VSS is used as the reference point for the logic and over-current circuitry; VX in the figure is the voltage between the
ITRIP pin and the VSS pin. Alternatively, the COM pin is the reference point for the low-side gate drive circuitry. The
output voltage used to drive the low-side gate is VLO-COM; the gate-emitter voltage (VGE) of the low-side switch is the
output voltage of the driver minus the drop across RG,LO.
DC+ BUS
DBS
VB
(x3)
VCC
HO
(x3)
HVIC
ITRIP
VSS
CBS
RG,HO
VS
(x3)
LO
(x3)
COM
VS1
VS2
VS3
RG,LO
+
+
+
VGE1
VGE2
VGE3
-
-
-
R2
R0
+
VX
R1
-
DC- BUS
Figure 24: Separate VSS and COM pins
Tolerant to Negative VS Transients
A common problem in today’s high-power switching converters is the transient response of the switch node’s voltage
as the power switches transition on and off quickly while carrying a large current. A typical 3-phase inverter circuit is
shown in Figure 25; here we define the power switches and diodes of the inverter.
If the high-side switch (e.g., the IGBT Q1 in Figures 26 and 27) switches off, while the U phase current is flowing to
an inductive load, a current commutation occurs from high-side switch (Q1) to the diode (D2) in parallel with the lowside switch of the same inverter leg. At the same instance, the voltage node VS1, swings from the positive DC bus
voltage to the negative DC bus voltage.
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© 2009 International Rectifier
25
AUIRS2336S
Figure 25: Three phase inverter
DC+ BUS
Q1
ON
IU
VS1
Q2
OFF
D2
DC- BUS
Figure 26: Q1 conducting
Figure 27: D2 conducting
Also when the V phase current flows from the inductive load back to the inverter (see Figures 28 and 29), and Q4
IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, VS2,
swings from the positive DC bus voltage to the negative DC bus voltage.
DC+ BUS
Q3
OFF
D3
IV
VS2
Q4
OFF
D4
DC- BUS
Figure 28: D3 conducting
Figure 29: Q4 conducting
However, in a real inverter circuit, the VS voltage swing does not stop at the level of the negative DC bus, rather it
swings below the level of the negative DC bus. This undershoot voltage is called “negative VS transient”.
The circuit shown in Figure 30 depicts one leg of the three phase inverter; Figures 31 and 32 show a simplified
illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit from
the die bonding to the PCB tracks are lumped together in LC and LE for each IGBT. When the high-side switch is on,
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© 2009 International Rectifier
26
AUIRS2336S
VS1 is below the DC+ voltage by the voltage drops associated with the power switch and the parasitic elements of
the circuit. When the high-side power switch turns off, the load current momentarily flows in the low-side
freewheeling diode due to the inductive load connected to VS1 (the load is not shown in these figures). This current
flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage between
VS1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the VS pin).
Figure 30: Parasitic Elements
Figure 31: VS positive
Figure 32: VS negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative VS transient
voltage can exceed this range during some events such as short circuit and over-current shutdown, when di/dt is
greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding
applications. The AUIRS2336S has been seen to withstand large negative VS transient conditions on the order of 50 V for a period of 50 ns. An illustration of the AUIRS2336S performance can be seen in Figure 33. This
experiment was conducted using various loads to create this condition; the curve shown in this figure illustrates the
successful operation of the AUIRS2336S under these stressful conditions. In case of -VS transients greater then -20
V for a period of time greater than 100 ns, the HVIC is designed to hold the high-side outputs in the off state for 4.5
μs in order to ensure that the high- and low-side power switches are not on at the same time.
Figure 33: Negative VS transient results for an International Rectifier HVIC
Even though the AUIRS2336S has been shown able to handle these large negative VS transient conditions, it is
highly recommended that the circuit designer always limit the negative VS transients as much as possible by careful
PCB layout and component use.
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© 2009 International Rectifier
27
AUIRS2336S
PCB Layout Tips
Distance between high and low voltage components: It’s strongly recommended to place the components tied to the
floating voltage pins (VB and VS) near the respective high voltage portions of the device.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure
34). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops
must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the IGBT
collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to developing a
voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.
Figure 34: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (CIN) between the VCC and VSS pins. This
connection is shown in Figure 35. A ceramic 1 μF ceramic capacitor is suitable for most applications. This
component should be placed as close as possible to the pins in order to reduce parasitic elements.
Vcc
HIN(x3)
VB (x3)
LIN(x3)
HO(x3)
EN
VS (x3)
FAULT
CIN
RCIN
LO(x3)
ITRIP
COM
VSS
Figure 35: Supply capacitor
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© 2009 International Rectifier
28
AUIRS2336S
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at
the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such conditions,
it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize the low-side
emitter to negative bus rail stray inductance. However, where negative VS spikes remain excessive, further steps
may be taken to reduce the spike. This includes placing a resistor (5 Ω or less) between the VS pin and the switch
node (see Figure 36), and in some cases using a clamping diode between VSS and VS (see Figure 37). See DT04-4
at www.irf.com for more detailed information.
Figure 36: VS resistor
Figure 37: VS clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
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© 2009 International Rectifier
29
AUIRS2336S
Parameter Temperature Trends
700
Turn-off Propagation Delay (ns )
Turn-on Propagation Delay (ns)
Figures illustrated in this chapter provide information on the experimental performance of the AUIRS2336S HVIC.
The line plotted in each figure is generated from actual lab data. A large number of individual samples were tested
at three temperatures (-40 ºC, 25 ºC, and 125 ºC) in order to generate the experimental curve. The line consists
of three data points (one data point at each of the tested temperatures) that have been connected together to
illustrate the understood trend. The individual data points on the Typ. curve were determined by calculating the
averaged experimental value of the parameter (for a given temperature).
650
M ax.
600
Typ.
M in.
550
500
-50
-25
0
25
50
75
100
125
700
650
M ax.
Typ.
600
M in.
550
500
-50
-25
0
o
ITRIP to Output SD Propagation Delay (ns)
DH Turn-On Propagation Delay (ns)
M ax.
Typ.
M in.
250
200
-25
0
25
50
100
125
100
125
Figure 39: tOFF vs. temperature
400
-50
75
Temperature ( C)
Figure 38: tON vs. temperature
300
50
o
Temperature ( C)
350
25
75
100
125
o
Temperature ( C)
Figure 40: DT vs. temperature
1000
900
M ax.
Typ.
800
M in.
700
600
-50
-25
0
25
50
75
o
Temperature ( C)
Figure 41: tITRIP vs. temperature
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© 2009 International Rectifier
30
800
EN Low to Output SD Propagation Delay (ns)
ITRIP to FAULT Propagation Delay (ns)
AUIRS2336S
M ax.
700
Typ.
600
M in.
500
400
-50
-25
0
25
50
75
100
125
o
600
550
500
M ax.
Typ.
450
M in.
400
-50
-25
25
50
75
100
125
100
125
100
125
o
Temperature ( C)
Temperature ( C)
Figure 42: tFLT vs. temperature
Figure 43: tEN vs. temperature
250
100
Turn-Off fall Time (ns) -
Turn-On Rise Time (ns)
0
200
150
M ax.
100
Typ.
75
50
M ax.
Typ.
25
M in.
M in.
0
50
-50
-25
0
25
50
75
100
125
-50
-25
0
80
PM (ns).
60
M ax.
Typ.
M in.
0
-50
-25
0
25
50
75
Figure 45: Tf vs. temperature
ITRIP Input Bias Current (uA).
Figure 44: Tr vs. temperature
20
50
Temperature ( C)
Temperature ( C)
40
25
o
o
75
100
125
16
12
8
4
M ax.
Typ.
M in.
0
-50
o
-25
0
25
50
75
o
Temperature ( C)
Temperature ( C)
Figure 46: PM vs. temperature
Figure 47: IITRIP+ vs. temperature
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© 2009 International Rectifier
31
4
Quiescent VBS Supply Current (uA)
Quiescent VCC Supply Current (mA)
AUIRS2336S
3
M ax.
2
Typ.
M in.
1
0
-50
-25
0
25
50
75
100
125
100
80
M ax.
60
Typ.
M in.
40
20
-50
-25
0
o
Output Low Short Circuit Current (A)
Output High Short Circuit Pulsed Current (A) .
-0.10
-0.15
M ax
Typ.
M in.
-0.25
0
25
50
75
100
125
0.10
-50
-25
0
VCC Supply UV- Going Threshold (V)
VCC Supply UV+ Going Threshold (V)
Typ.
M in.
8.0
50
25
50
75
Figure 51: IO- vs. temperature
M ax.
25
125
0.20
Temperature ( C)
9.5
0
100
M in.
0.30
o
10.0
-25
125
Typ.
Figure 50: IO+ vs. temperature
-50
100
M ax
0.40
Temperature ( C)
8.5
125
0.50
o
9.0
100
Figure 49: IQBS vs. temperature
-0.05
-25
75
Temperature ( C)
Figure 48: IQCC vs. temperature
-50
50
o
Temperature ( C)
-0.20
25
75
100
125
o
9.0
8.5
M ax
8.0
7.5
Typ.
M in.
7.0
-50
-25
0
25
50
75
o
Temperature ( C)
Temperature ( C)
Figure 52: VCCUV+ vs. temperature
Figure 53: VCCUV- vs. temperature
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© 2009 International Rectifier
32
10.0
VBS Supply UV- Going Threshold (V)
VBS Supply UV+ Going Threshold (V)
AUIRS2336S
9.5
9.0
M ax.
Typ.
8.5
M in.
8.0
-50
-25
0
25
50
75
100
125
9.0
8.5
M ax.
8.0
Typ.
M in.
7.5
7.0
-50
-25
ITRIP Negative Going Threshold (mV)
ITRIP Positive Going Threshold (mV
550
M ax.
Typ.
450
M in.
400
-25
0
25
50
75
100
125
o
Temperature ( C)
FAULT Low On Resistance ( Ohm)
80
M ax.
Typ.
40
M in.
0
-50
-25
0
25
50
125
450
M ax
Typ.
400
M in.
350
300
-50
-25
75
100
0
25
50
75
100
125
o
Temperature ( C)
Figure 57: VIT,TH- vs. temperature
100
20
100
500
Figure 56: VIT,TH+ vs. temperature
60
75
Figure 55: VBSUV- vs. temperature
600
-50
50
Temperature ( C)
Temperature (oC)
500
25
o
Figure 54: VBSUV+ vs. temperature
RCIN Low On Resistance ( Ohm)
0
125
o
60
50
M ax.
40
Typ.
M in.
30
20
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Temperature ( C)
Figure 58: RON,RCIN vs. temperature
Figure 59: RON,FLT vs. temperature
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© 2009 International Rectifier
33
AUIRS2336S
Package Details: SOIC28W
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© 2009 International Rectifier
34
AUIRS2336S
Package Details: Tape and Reel SOW28
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIM ENSION IN M M
E
G
CARRIER TAPE DIMENSION FOR
Metric
Code
Min
Max
A
11.90
12.10
B
3.90
4.10
C
23.70
24.30
D
11.40
11.60
E
10.80
11.00
F
18.20
18.40
G
1.50
n/a
H
1.50
1.60
28SOICW
Imperial
Min
Max
0.468
0.476
0.153
0.161
0.933
0.956
0.448
0.456
0.425
0.433
0.716
0.724
0.059
n/a
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 28SOICW
Metric
Imperial
Code
Min
Max
Min
Max
A
329.60
330.25
12.976
13.001
B
20.95
21.45
0.824
0.844
C
12.80
13.20
0.503
0.519
D
1.95
2.45
0.767
0.096
E
98.00
102.00
3.858
4.015
F
n/a
30.40
n/a
1.196
G
26.50
29.10
1.04
1.145
H
24.40
26.40
0.96
1.039
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© 2009 International Rectifier
35
AUIRS2336S
Part Marking Information
Part number
AUIRS2336S
Date code
AYWW ?
IR logo
Pin 1
Identifier
? XXXX
?
MARKING CODE
P
Lead Free Released
Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
Non-Lead Free Released
Ordering Information
Standard Pack
Package Type
Base Part Number
SOIC28W
Complete Part Number
Form
Quantity
Tube/Bulk
25
Tape and Reel
1000
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AUIRS2336S
AUIRS2336STR
© 2009 International Rectifier
36
AUIRS2336S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to
product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of
sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this
information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims,
costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was
negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the
IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by
IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products
which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including
the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
© 2009 International Rectifier
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