BAY135 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage FEATURES • Silicon planar diode • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Protection circuits, delay circuits MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAY135 ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAY135-TR or BAY135-TAP BAY135 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage SYMBOL VALUE UNIT VRRM 140 V VR 125 V Peak forward surge current tp = 1 μs IFSM 2 A Average forward current f = 50 Hz IF(AV) 200 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range Rev. 1.8, 02-Aug-12 TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 350 K/W Tj 175 °C Tstg - 65 to + 175 °C Document Number: 85552 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY135 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 30 mA VF 1000 mV E 300 Ix, VR IR 3 nA E 300 Ix, VR, Tj = 125 °C IR 0.5 μA 1 nA Forward voltage Reverse current E 300 Ix, VR = 60 V IR Breakdown voltage IR = 5 μA, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0 V, f = 1 MHz, CD MIN. TYP. 140 V 5 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 1000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 1 Tj = 25 °C 100 Scattering Limit 10 1 0.1 0 40 80 120 160 0 200 Tj - Junction Temperature (°C) 94 9079 94 9078 Fig. 1 - Reverse Current vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 02-Aug-12 Document Number: 85552 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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