UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G ORDERING INFORMATION Normal BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K Ordering Number Lead Free Plating BC337L-x-T92-B BC337L-x-T92-K BC338L-x-T92-B BC338L-x-T92-K Halogen Free BC337G-x-T92-B BC337G-x-T92-K BC338G-x-T92-B BC338G-x-T92-K www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., LTD Package TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk 1 of 3 QW-R201-039.C BC337/BC338 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector-Emitter Voltage BC337 BC338 VCES Collector-Emitter Voltage BC337 BC338 VCEO Emitter-Base Voltage Collector Current (DC) Collector Dissipation Derate above 25°C RATINGS 50 30 UNIT V V 45 25 V V 5 V 800 mA 625 mW PC 5 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. VEBO IC THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL BC337 Collector-Emitter Breakdown Voltage BC338 BC337 Collector-Emitter Breakdown Voltage BC338 Emitter-Base Breakdown Voltage BC337 Collector Cut-off Current BC338 DC Current Gain Collector-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain bandwidth product RATINGS 200 83.3 TEST CONDITIONS BVCEO IC=10mA, IB=0 BVCES IC=0.1mA, VBE=0 BVEBO hFE1 IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA hFE2 VCE=1V, IC=300mA ICES VCE(SAT) VBE(ON) Cob fT IC=500mA, IB=50mA VCE=1V, IC=300mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=50MHz MIN 45 25 50 30 5 TYP 2 2 100 60 MAX UNIT V V V V V 100 nA 100 nA 630 0.7 1.2 12 100 V V pF MHz CLASSIFICATION OF hFE1 RANK hFE1 16 100-250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 160-400 40 250-630 2 of 3 QW-R201-039.C BC337/BC338 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-039.C