UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R 2N5401G-x-AB3-R 2N5401L-x-T92-B 2N5401G-x-T92-B 2N5401L-x-T92-K 2N5401G-x-T92-K 2N5401L-x-T92-R 2N5401G-x-T92-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package SOT-89 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C E B C Packing Tape Reel Tape Box Bulk Tape Reel 1 of 4 QW-R201-001,E 2N5401 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT -160 V -150 V -5 V -600 mA TO-92 625 mW Collector Dissipation PC SOT-89 500 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance COB Noise Figure NF TEST CONDITIONS IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -120V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -1mA VCE = -5V, IC = -10mA VCE = -5V, IC = -50mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCE = -10V, IC = -10mA f = 100MHz VCB = -10V, IE = 0, f = 1MHz IC = -0.25mA, VCE = -5V RS = 1kΩ, f = 10Hz ~ 15.7kHz MIN -160 -150 -5 TYP MAX -50 -50 80 80 80 400 -0.2 -0.5 -1 -1 100 UNIT V V V nA nA V V 400 MHz 6.0 pF 8 dB Note: Pulse test: PW<300μs, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 150-240 C 200-400 2 of 4 QW-R201-001,E 2N5401 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-001,E 2N5401 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-001,E