DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers. handbook, halfpage1 DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 2 2 3 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − BC636 VCEO MIN. −45 V BC638 − −60 V BC640 − −100 V collector-emitter voltage open base BC636 − −45 V BC638 − −60 V BC640 − −80 V − −5 V VEBO emitter-base voltage open collector IC collector current (DC) − −1 A ICM peak collector current − −1.5 A IBM peak base current − −200 mA Ptot total power dissipation − 0.83 W Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 150 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −30 V − −100 nA IE = 0; VCB = −30 V; Tj = 150 °C − −10 µA IC = 0; VEB = −5 V − −100 nA ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain VCE = −2 V; see Fig.2 IC = −5 mA 40 − IC = −150 mA 63 250 IC = −500 mA 25 − BC636-10 63 160 BC636-16; BC638-16; BC640-16 100 250 IC = −500 mA; IB = −50 mA − −0.5 V − DC current gain IC = −150 mA; VCE = −2 V; see Fig.2 VCEsat collector-emitter saturation voltage VBE base-emitter voltage IC = −500 mA; VCE = −2 V −1 V fT transition frequency IC = −50 mA; VCE = −5 V; f = 100 MHz 100 − MHz h FE1 ----------h FE2 DC current gain ratio of the complementary pairs IC = 150 mA; VCE = 2 V 1.6 1999 Apr 23 3 − Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 MBH730 160 handbook, full pagewidth VCE = −2 V hFE 120 80 40 0 −10−1 −1 −10 −102 Fig.2 DC current gain; typical values. 1999 Apr 23 4 −103 IC (mA) −104 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 23 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 23 6 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 NOTES 1999 Apr 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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