DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of 1998 Jul 16 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications. handbook, halfpage DESCRIPTION 2 PNP medium power transistor in a SOT89 plastic package. NPN complement: BC868. 3 1 MARKING TYPE NUMBER 1 MARKING CODE BC869 CEC BC869-16 CGC BC869-25 CHC 2 3 Bottom view MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −32 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current Ptot total power dissipation Tstg − −200 mA − 1.35 W storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 08 2 Philips Semiconductors Product specification PNP medium power transistor BC869 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 93 K/W 13 K/W note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current IEBO emitter cut-off current hFE DC current gain TYP. MAX. UNIT IE = 0; VCB = −25 V − − −100 nA IE = 0; VCB = −25 V; Tj = 150 °C − − −10 µA IC = 0; VEB = −5 V − − −100 nA IC = −5 mA; VCE = −10 V; see Fig.2 50 − − 100 − 375 IC = −1 A; VCE = −1 V; see Fig.2 60 − − BC869-16 100 − 250 BC869-25 160 − 375 − − −500 mV VCEsat collector-emitter saturation voltage VBE base-emitter voltage 1999 Apr 08 MIN. IC = −500 mA; VCE = −1 V; see Fig.2 DC current gain fT CONDITIONS transition frequency IC = −500 mA; VCE = −1 V; see Fig.2 IC = −1 A; IB = −100 mA IC = −5 mA; VCE = −10 V − −620 − mV IC = −1 A; VCE = −1 V − − −1 V − − MHz IC = −10 mA; VCE = −5 V; f = 100 MHz 40 3 Philips Semiconductors Product specification PNP medium power transistor BC869 MGD845 400 handbook, full pagewidth hFE 300 200 100 0 −10−1 −1 −10 −102 VCE = −1 V. Fig.2 DC current gain; typical values. 1999 Apr 08 4 −103 IC (mA) −104 Philips Semiconductors Product specification PNP medium power transistor BC869 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 08 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification PNP medium power transistor BC869 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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