UNISONIC TECHNOLOGIES CO., LTD BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 Description The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. 1 2 SOT-23 *Pb-free plating product number:BC817L PIN CONFIGURATION PIN NO. PIN NAME 1 EMITTER 2 BASE 3 COLLECTOR ORDERING INFORMATION Order Number Normal Lead Free Plating BC817-16-AE3-R BC817L-16-AE3-R BC817-25-AE3-R BC817L-25-AE3-R BC817-40-AE3-R BC817L-40-AE3-R Package Packing SOT-23 SOT-23 SOT-23 Tape & Reel Tape & Reel Tape & Reel MARKING BC817-16 BC817-25 BC817-40 6A 6B 6C www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 QW-R206-025.B BC817 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCES 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 1.5 A 350 mW Power Dissipation PD 2.8 mW/°C Derate above 25°C ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range and assured by design from –20℃~+85℃. THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm. SYMBOL θJA RATING (Note) 350 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CEO V(BR)CES V(BR)EBO Collector-Cutoff Current ICBO TEST CONDITIONS IC=10mA, IB=0 IC=100µA,IE=0 IE=10µA, Ic=0 VCB=20V VCB=20V,Ta=150°C MIN TYP MAX UNIT 45 50 5 100 5 V V V nA µA ON CHARACTERISTICS hFE1* hFE2 VCE(SAT) VBE(ON) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Ic=100mA,VCE=1.0V Ic=500mA, VCE=1.0V Ic=500mA,IB=50Ma Ic=500mA, VCE=1.0V See Classification 40 0.7 1.2 V V CLASSIFICATION OF hFE1* RANK RANGE BC817-16 100-250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw BC817-25 160-400 BC817-40 250-600 2 QW-R206-025.B BC817 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs Collector Current Collector-Emitter Voltage, VCESAT (V) Typical Pulsed Current Gain, hFE Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V 400 125℃ 300 25℃ 200 100 -40℃ 0 0.001 0.01 0.1 1 2 0.6 ß = 10 0.5 0.4 125℃ 0.3 25℃ 0.2 0.1 -40℃ 0 0.01 0.1 Collector Current, IC (A) Base-Emitter On Voltage vs Collector Current -40℃ 0.8 25℃ 125℃ 0.4 0.2 10 100 1000 Collector Current, IC (mA) Collector Current , ICBO(nA) Collector-Cutoff Current vs Ambient Temperature 100 VCB = 40V 10 1 0.1 25 50 75 100 125 150 Ambient Temperature, TA (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Base-Emitter On Voltage, VBE(ON) (V) 1 1 -40℃ 0.8 25℃ 0.6 150℃ 0.4 VCC = 5V 0.2 0.001 0.01 1 0.1 Collector Current, IC (A) Collector-Base Capacitance vs Collector-Base Voltage Collector-BasE Capacitance, Cc (pF) Base-Emitter Voltage, VBE(SAT) (V) 1.2 ß = 10 1 3 Collector Current, IC (A) Base-Emitter Saturation Voltage vs Collector Current 0.6 1 40 30 20 10 0 0 4 8 12 16 20 24 28 Collector-Base Voltage, VCB (V) 3 QW-R206-025.B BC817 NPN EPITAXIAL SILICON TRANSISTOR 500 VCE = 10V 400 300 200 100 0 1 10 100 1000 Collector Current, IC(mA) Gain Bandwidth Product vs Collector Current Power Dissipation, PD(mW) Gain Bandwidth Pro Duct, hFE(MHz) TYPICAL CHARACTERISTICS(cont.) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 125 150 Temperature (℃) Power Dissipation vs Ambient Temperature UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R206-025.B