Preliminary Datasheet BCR30FM-8LB 400V - 30A - Triac R07DS0965EJ0001 Rev.0.01 Nov 28, 2012 Medium Power Use Features Insulated Type Planar Passivation Type Viso: 2000 V IT (RMS) : 30 A VDRM : 400 V Tj: 150 °C IFGTI, IRGTI, IRGT : 30 mA Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 8 400 500 Symbol VDRM VDSM Unit V V Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 30 A Commercial frequency, sine full wave 360 conduction, Tc = 33C Surge on-state current ITSM 300 A 50 Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 450 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note5 R07DS0965EJ0001 Rev.0.01 Nov 28, 2012 Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1 T2 G terminal to case Page 1 of 3 BCR30FM-8LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM On-state voltage VTM Min. — — — Typ. — — — Max. 3.0 5.0 1.5 Unit mA mA V Test conditions Tj = 125C, VDRM applied Tj = 150C, VDRM applied Tc = 25C, ITM = 45 A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 2.0 2.0 2.0 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 — — — — — — 3.0 — V V C/W V/s Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C 1 — — V/s Tj = 150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 1. 2. 3. 4. 5. Rth (j-c) (dv/dt)c Gate open. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –16 A/ms 3. Peak off-state voltage VD = 400 V R07DS0965EJ0001 Rev.0.01 Nov 28, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 3 BCR30FM-8LB Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number BCR30FM-8LB#BB0 BCR30FM-8LB-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS0965EJ0001 Rev.0.01 Nov 28, 2012 Page 3 of 3 Notice 1. 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