1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS ＢＤ６５５１Ｇ TYPE FEATURE ・ ・ ・ ・ Constant voltage and constant current control Power supply voltage: 1.8V～12V High accuracy reference voltage: 1.21V±1% An accuracy for current-detecting voltage: 200mV±2% ○ ABSOLUTE MAXIMUM RATINGS PARAMETER (Ta=25℃) Symbol Limit Unit Power Supply Voltage ICT Pin Maximum Voltage Power Dissipation VMAX VICTMAX Pd -0.3 ～ 14 -0.3 ～ VCC 675 *1 V V mW Operating Temperature Range Maximum Junction Temperature Topr Tjmax 0 ～ +85 150 ℃ ℃ Storage Temperature Range Tstg -55 ～ +150 ℃ *1 Pd derated at 5.4mW/℃ for temperature above Ta=25℃, mounted on 70mm×70mm×1.6mm glass-epoxy PCB. ○ OPERATING CONDITIONS (Ta=0～+85℃) PARAMETER Symbol Power Supply Voltage VCC Limit 1.8～12 Unit *2 V *2 Except an amplifier for voltage control loop guaranteed above VCC=2.5V. REV. A 2/4 ○ ELECTRICAL CHARACTERISTICS PARAMETER 【Total Current Consumption】 Total Supply Current - not taking the output sinking current into account 【Voltage Control Loop】 Transconduction Gain(VCT). Sink Current Only Voltage Control Loop Reference at 1.5mA sinking current 【Current Control Loop】 Transconduction Gain(ICT). Sink Current Only Current Control Loop Reference at 2.5mA sinking current (Ta=25℃ and Vcc=+5V (unless otherwise specified)) MIN. Limit TYP. MAX. ICC - 0.6 GMV 1.0 4.5 Symbol VREF GMI VSE UNIT Conditions 2 mA Ta=25℃ - mA/mV Ta=25℃ 1.198 1.21 1.222 1.186 1.21 1.234 1.5 3.5 - 196 200 204 V mA/mV ｍV Ta=25℃ 0 < Ta < 85℃ Ta=25℃ Ta=25℃ 0 < Ta < 85℃ 192 200 208 Ibi 13 23 33 μA Ta=25℃ IOS - 25 50 mA Ta=25℃,OUT=VCC, VSE=0V, ICT=-0.3V UVLO Threshold Voltage UVLO Hysteresis Width VVT DVVT 1.8 40 1.9 100 2.0 160 V mV Output Short Circuit Current at Full Drive IOS2 5.0 - - mA Current out of pin ICT at -200mV 【Output Stage】 Output Short Circuit Current, Output to VCC, Sink Current Only 【UVLO】 ● This product is not designed for protection against radio active rays. ○ PACKEGE, MARKING SPECIFICATION SSOP6 (UNIT:mm) REV. A VCC=L→H Ta=25℃ VCC=OUT=1.8V 3/4 ○ BLOCK DIAGRAM VCC 6 1.21V + 3 OUT - VOLTAGE REFERENCE 1 VCT VCC + - - + 2 GND UVLO 4 5 ICT VSE ○ PIN No. & PIN NAME PIN No. PIN Name 1 2 3 4 5 VCT GND OUT ICT VSE 6 VCC Function Input Pin of the Voltage Control Loop Ground Line. 0V Reference For All Voltages Output Pin. Sinking Current Only Input Pin of the Current Control Loop(+) Input Pin of the Current Control Loop(-) Positive Power Supply Line. This pin doubles low voltage input detection pin. REV. A 4/4 ○ Operation Notes 1) Absolute maximum ratings An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2) GND voltage The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages up to -0.3 V to be applied to the ICT pin. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 5) Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Mutual impedance Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance). 7) Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, as shown in the figures below, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause the behavior described above. Use caution when designing the circuit. Resistor (Pin B) ～ ～ Transistor (NPN) B C ～ ～ (Pin A) E GND N P+ P P+ N N N P substrate Parasitic elements P+ P N N P+ N P substrate GND Parasitic elements GND (Pin B) (Pin A) ～ ～ C ～ ～ B Parasitic elements E GND Other Adjacent Elements Simplified structure of a Monolithic IC REV. A GND Parasitic elements Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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