1/4 STRUCTURE Silicon monolithic integrated circuits PRODUCT SERIES 2-in-1 motor driver for VTR TYPE BD6903EFV FUNCTION ・VTR cylinder motor driver (Sensorless 3-phase full-wave soft switching drive system) ・VTR loading motor driver ○Absolute maximum ratings (Ta=25℃) Parameter Supply voltage Power dissipation Symbol Limit Unit VCC 7 V VM 15 V VG 20 V Pd 1000※ 1 mW Operating temperature range Topr -20～+75 ℃ Storage temperature range Tstg -55～+150 ℃ Iomax1 800※ Maximum output current (cylinder block) Maximum output current (loading block) Iomax2 Junction temperature Tjmax 1000 2 mA ※2 mA ℃ +150 ※1 70mm×70mm×1.6mm glass epoxy board. Derating in done at 8.0mW/℃ for operating above Ta=25℃. ※2 Do not, however exceed Pd, ASO and Tjmax=150℃. ○Recommended operating conditions (Ta= -25～+75℃) Parameter Supply voltage UIN, VIN, WIN in-phase input voltage range PG amp in-phase input voltage range Symbol Min Typ Max VCC 4.5 5 5.5 Unit V VM 9 12 13.5 V VG VM+3 17 19 V VBEMFD 0 - VM V VPD 1.5 - 3.0 V This product described in this specification isn’t judged whether it applies to COCOM regulations. Please confirm in case of export. This product isn’t designed for protection against radioactive rays. REV. B 2/4 ○Electrical characteristics (Unless otherwise specified, Ta=25℃, VCC=5V, VM =12V, VG=17V) Parameter Symbol Limit Min Typ Max Unit Conditions Overall VCC total supply current ICC - 9.2 14.2 mA VM total supply current 1 IM1 - 1.4 2.8 mA LIN=H or L VM total supply current 2 IM2 - 1.4 2.8 mA LIN=M Output High-side output saturation voltage VOH - 0.4 0.8 V Io=-400mA Low-side output saturation voltage VOL - 0.3 0.6 V Io=400mA Torque reference EC input bias current Torque reference start voltage Torque reference I/O gain IEC - 0.5 2 μA VECR 2.35 2.5 2.65 V Gio 0.72 0.99 1.28 A/V ICTD -50 -35 -25 μA EC=2.6V-2.7V Gain output (HLM) RRNF = 0.5Ω Soft switch CT1, CT2 charge current ICTI 27 40 56 μA High CT1, CT2 clamp voltage VCTH 4.4 4.7 - V Low CT1, CT2 clamp voltage VCTL 0.8 1.0 1.3 V CST charge current ICSTD -20 -14 -6 μA CST discharge current ICSTI 2 6 10 μA High CST clamp voltage VCSTH 2.4 2.8 3.3 V Low CST clamp voltage VCSTL 0.8 1.0 1.3 V Input bias current IPG- - 0.1 0.25 μA DC bias voltage VPG 2.25 2.5 2.75 V Voltage gain 1 AV1 17.5 18.8 - dB f=1KHz High output voltage VOHP 3.4 3.75 V IOH=-1mA Low output voltage VOLP - 1.2 1.6 V IOL=1mA VHYSP -75 -100 -125 mV CT1, CT2 discharge current Startup control logic PG amp PG-=GND PG-=PGOUT HYS amp Hysteresis width PFGpin High output voltage VPFGP 4.5 - - V IO=-10μA Middle output voltage VPFGM 2.25 - 2.75 V IO=±10μA Low output voltage VPFGL - - 0.5 V IO=10μA High-level LIN input VLINH 3.5 - - V Loading: Forward rotation Middle-level LIN input VLINM 2.35 - 2.65 V Loading: Brake Low-level LIN input VLINL - - 1.5 V Loading: Reverse rotation LIN bias voltage VLINB 2.35 2.5 2.65 V Loading IO=200mA, Output saturation voltage VCE - 0.3 0.6 V total of output transistor high-side and low-side voltage ※Source currents are treated as negative while sinking currents are treated as positive. REV. B 3/4 ○Package outline Max 6.85 (include. BURR) Product No. BD6903EFV Lot No. HTSSOP-B20 (Unit:mm) ○Block diagram ○Pin No. / Pin name output Back EMF detection comparator VCC VM U Pre-drive Drive signal selector V W Buffer RNF Startup control logic CST CT1 VG TSD Soft switch waveform CT2 Control logic ERR Amp CS Amp LIN EC Pre-drive CNF VCC PG Amp Hysteresis comparator PGFG synthesis LGND PG- PGOUT PFG GND OUT2 OUT1 REV. B Pin No. Pin name 1 GND 2 LIN 3 EC 4 CT1 5 CT2 6 CST 7 CNF 8 PGOUT 9 PG- 10 VCC 11 W 12 V 13 RNF 14 U 15 VG 16 VM 17 OUT1 18 OUT2 19 LGND 20 PFG 4/4 ○Operation Notes (1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range (Topr) may result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. The implementation of a physical safety measure such as a fuse should be considered when use of the IC in a special mode where the absolute maximum ratings may be exceeded is anticipated. (2) Power supply lines Regenerated current may flow as a result of the motor's back electromotive force. Insert capacitors between the power supply and ground pins to serve as a route for regenerated current. Determine the capacitance in full consideration of all the characteristics of the electrolytic capacitor, because the electrolytic capacitor may loose some capacitance at low temperatures. If the connected power supply does not have sufficient current absorption capacity, regenerative current will cause the voltage on the power supply line to rise, which combined with the product and its peripheral circuitry may exceed the absolute maximum ratings. It is recommended to implement a physical safety measure such as the insertion of a voltage clamp diode between the power supply and GND pins. (3) Ground potential Ensure a minimum GND pin potential in all operating conditions. (4) Setting of heat Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. This IC exposes its frame of the backside of package. Note that this part is assumed to use after providing heat dissipation treatment to improve heat dissipation efficiency. Try to occupy as wide as possible with heat dissipation pattern not only on the board surface but also the backside. (5) Actions in strong magnetic field Use caution when using the IC in the presence of a strong magnetic field as doing so may cause the IC to malfunction. (6) ASO When using the IC, set the output transistor for the motor so that it does not exceed absolute maximum ratings or ASO. (7) Thermal shutdown circuit This IC incorporates a TSD (thermal shutdown) circuit (TSD circuit). If the temperature of the chip reaches the following temperature, the motor coil output will be opened.The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. TSD on temperature [°C] (typ.) Hysteresis temperature [°C] (typ.) 170 20 (8) Ground Wiring Pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. REV. 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