PD - 9.1562A
IRF9410
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.030Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Symbol
Maximum
VDS
VGS
30
± 20
7.0
5.8
37
2.8
2.5
1.6
70
4.2
0.25
5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
Limit
Units
RθJA
50
°C/W
9/15/97
IRF9410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
0.024
0.032
0.037
–––
14
–––
–––
–––
–––
18
2.4
4.9
7.3
8.3
23
17
550
260
100
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.030
VGS = 10V, ID = 7.0A
0.040
Ω
VGS = 5.0V, ID = 4.0A
0.050
VGS = 4.5V, ID = 3.5A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 15V, I D = 7.0A
2.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, T J = 55°C
100
VGS = 20V
nA
-100
VGS = -20V
27
ID = 2.0A
3.6
nC
VDS = 15V
7.4
VGS = 10V, See Fig. 10
15
VDD = 25V
17
ID = 1.0A
ns
46
RG = 6.0Ω, VGS = 10V
34
RD = 25Ω
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.8
–––
–––
37
A
––– 0.78
––– 40
––– 63
1.0
80
130
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, I S = 2.0A, VGS = 0V
TJ = 25°C, I F = 2.0A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRF9410
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
TOP
I D , Dra in-to -S o u rce Cu rre n t (A)
I D , Dra in-to -S o u rce Cu rre n t (A )
TOP
10
3.0 V
1
0.1
20 µs P U LSE W IDTH
TJ = 25 °C
A
1
10
3.0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
1
10
0.1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
I S D , R e v e rse D ra in C u rre n t (A )
100
I D , D r ain- to-S ourc e C urre nt (A )
1
V D S , D rain-to-S ource Voltage (V)
T J = 2 5 °C
TJ = 1 5 0 °C
10
VD S = 1 0 V
2 0 µ s PU L SE W ID TH
1
3.0
3.5
4.0
4.5
5.0
5.5
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
10
TJ = 1 50 °C
TJ = 2 5°C
1
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
V S D , S ource-to-Drain Voltage (V )
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.2
IRF9410
ID = 7.0A
( Ω)
0.0
-60 -40 -20
R D S ( o n ), Drain-to-Source On Resistance
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
0.05
1.5
1.0
0.5
VGS = 10V
0
20
40
60
80 100 120 140 160
0.04
VG S = 4.5V
0.03
V G S = 10V
0.02
5
10
15
20
Fig 6. Typical On-Resistance Vs. Drain
Current
200
0.14
TOP
E A S , Single Pulse Avalanche Energy (mJ)
0.12
0.10
0.08
0.06
0.04
I D = 7.0A
0.02
0.00
A
3
6
9
12
V G S - Gate-to-Source V olta ge (V )
Fig 7. Typical On-Resistance Vs. Gate
Voltage
25
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
A
0
TJ , Junction Temperature ( °C)
15
BOTTOM
160
I D
2.1A
3.7A
4.6A
120
80
40
A
0
25
50
75
100
125
150
Starting T ,JJunction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
IRF9410
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
800
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
C i ss
600
Coss
400
C rs s
200
0
A
1
10
ID = 2.0A
VDS = 15V
VGS, Gate-to-Source Voltage (V)
1000
100
16
12
8
4
0
0
6
12
18
24
30
Q G, Total Gate Charge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
10
0.20
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF9410
Package Outline
SO8 Outline
D IM
D
-B -
5
8
E
-A -
1
7
2
5
3
H
0.25 (.01 0)
4
e
6X
M
A M
θ
e1
K x 45°
θ
A
-C -
0.10 (.0 04)
A1
B 8X
0.25 ( .010)
M
L
8X
6
C
8X
C A S B S
M IL L IM E T E R S
MAX
M IN
M AX
A
.0 5 3 2
.0688
1 .3 5
1 .7 5
A1
.0 0 4 0
.0098
0 .1 0
0 .2 5
B
.0 1 4
.018
0 .3 6
0 .4 6
C
.0 0 7 5
.0 09 8
0 .1 9
0 .2 5
D
.1 8 9
.1 96
4 .8 0
4 .9 8
E
.1 5 0
.157
3 .8 1
3 .9 9
5
6
IN C H E S
M IN
e
.0 5 0 B A S IC
1 .2 7 B A S IC
e1
.0 2 5 B A S IC
0 .6 3 5 B A S IC
H
.2 2 8 4
.2 44 0
K
.0 1 1
.019
0 .2 8
5 .8 0
0 .4 8
6 .2 0
L
0 .1 6
.0 5 0
0 .4 1
1 .2 7
θ
0°
8°
0°
8°
RE CO MM EN DE D F O O T PR INT
N OT E S :
1. D IME NS IO NING AND T O LE RA NCING PE R A NS I Y 14.5M- 1982.
2. C O NT RO LLING D IME NS IO N : IN CH.
3. D IME NS IO NS A RE S HO W N IN M ILLIME T ER S (INC HE S) .
4. O U TLIN E CO NF O RM S T O JE DE C O U TLINE MS -01 2AA .
5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS
MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006).
6 DIM ENS IO NS IS T H E LE NG T H O F LE AD F O R SO LDE RIN G T O A S UB ST RA T E..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF9410
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
N O TE S :
1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) .
3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1.
3 30 .00
(12 .9 92 )
MAX.
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
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Data and specifications subject to change without notice.
9/97