WINGS 2SD2498

Silicon Diffused Power Transistor
2SD2498
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic package,primarily for use in switching power
circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
TO-3PM
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
Tmb 25
IC = 4.0A; IB = 1.2A
f = 16KHz
IF = 4.0A
ICsat = 4.0A; f = 16KHz
TYP
MAX
1500
600
5
10
50
5
2.0
1.0
UNIT
V
V
A
A
W
V
A
V
s
MIN
-55
-
MAX
1500
600
5
10
2
UNIT
V
V
A
A
A
A
W
TYP
-
MAX
1.0
2.5
1.5
0.3
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
50
150
150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
PARAMETER
Collector cut-off current
Switching times(16KHz line deflecton circuit)
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 4.0A; IB = 1.2A
IC = 4.0A; IB = 1.2A
IC = 1A; VCE = 5V
IF = 4.0A
IC = 0.1A; VCE = 10V
VCB = 10V
IC=4A,IB(end)=1.2A,VCC=100V
Turn-off storage time Turn-off fall time
IC=4A,IB(end)=1.2A,VCC=100V
VCEOsust
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
8
1.5
3
230
0.3
UNIT
mA
mA
V
5
1.5
40
2.0
1.0
V
V
V
MHz
pF
s
s