Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 3.0A; IB =0.8A f = 16KHz TYP - ICsat = 3.0A; f = 16KHz MAX 1500 600 3 6 40 5 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -65 - MAX 1500 600 3 6 TYP - MAX 1.0 2.5 40 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES PARAMETER Collector cut-off current VCEOsust Collector-emitter sustaining voltage VCEsat VBEsat hFE VF fT Cc ts tf Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 3.0A; IB = 0.8A Ic=3.0A,IB=0.8A IC = 0.5A; VCE = 5V - V 8 5 1.5 3 90 - Switching times(16KHz line deflecton circuit) IC = 0.1A; VCE =10V VCB = 10V IC=3A,IB(end)=0.8A,VCC=105V Turn-off storage time Turn-off fall time IC=3A,IB(end)=0.8A,VCC=105V 0.7 1.0 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] UNIT mA mA V V V MHz pF s s