SILICON EPITAXAL PLANAR TRANSISTOR 2SD401 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A MIN 1.5 MAX 200 150 2 20 1.5 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 200 150 5 2 0.5 20 150 150 UNIT V V V A A W MAX 0.2 0.2 UNIT mA mA V V ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com CONDITIONS VCB=200V VEB=5V IC=1mA IC = 1.5A; IB = 0.15A IC = 500mA; VCE = 5V IC = 0.5A; VCE = 12V VCB = 10V Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] MIN 150 50 5 1.5 250 75 MHz pF us us us