PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is optimized for PCS CDMA (digital) in the 1850 MHz to 1910 MHz band. It operates from a positive voltage (3 - 4Volts Vcc) and includes a power-down feature. The input and output are both matched to 50Ω. It is housed in a 6 X 6 mm Land Grid Array package. U.S. PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery Power-down activated when Vref pin <1V 28.5 dBm CDMA Power 35% CDMA Efficiency Power-down Capability 80mA Typical Quiescent Current High Reliability InGaP Design Applications 3.5V U.S. PCS CDMA Handsets Functional Block Diagram CAUTION! SENSITIVE ELECTRONIC DEVICE SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE ELECTRICAL SPECIFICATIONS The following tables list the electrical characteristics of the ECM004 Power Amplifier Module. Table 1 lists the electrical performance of the ECM004 for nominal operating conditions for the PCS band. Table 2 lists the absolute maximum ratings for continuous operation. Table 1 - Electrical Specifications o Test Conditions: Ta = 25 C, VCC = +3.5V, VREF / PD (reference / power-down voltage) = +2.9V, F = 1850 to 1910 MHz SYMBOL PARAMETER LIMITS TYP. MIN. Frequency Gain (CDMA Modulation) @ 28.5dBm Output Power (CDMA) Adjacent Channel Power Rejection @ 28.5dBm Power Added Efficiency (CDMA) @ 28.5 dBm Output Stability Quiscent Current (No RF) ICQ Leakage Current (No RF) ILeak Vcc Supply Voltage IRL Input Return Loss Noise Figure NF Power Down On/Off Time TON/OFF NOTE 1: Using Application Schematic. Tuned for CDMA. NOTE 2: @ 1250 KHz offset from band center. NOTE 3: No oscillation all phases NOTE 4: Vcc = 3.5V, VREF/PD = 0V, No RF F G P ACPR PAE 1850 25 28 UNIT MAX. 1910 27 28.5 -46 38 6:1 80 10 3.5 10 5 <100 33 -44 100 20 TEST CONDITION MHz dB dBm dBc % VSWR mA uA V dB dB ns NOTE 1 NOTE 2 NOTE 3 NOTE 4 Table 2 - Absolute Maximum Ratings Exceeding any of the absolute maximum ratings may cause permanent damage to the device. No damage assuming only one paeameter is set at limit at a time with other parameters set at or below nominal value. PARAMETER RATING 7 UNIT Volts TEST CONDITION VREF / PD = 2.9V 4 Volts V CC = 3.5V +15 -40 to +110 -65 to +140 dBm °C °C Supply Voltage Reference / Power-down Voltage(Vcc=VREF / PD ) RF Power Input Ambient Operating Temperature Storage Temperature VCC , VREF / PD = 2.9V SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE PACKAGE DIMENSIONS AND MARKINGS The ECM004 is a multi-layer laminate base, overmold encapsulated modular package designed for surface-mounted solder attachment to a printed circuit board. Package Dimensions TOP VIEW Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) PIN 1 INDICATOR EiC xxxx ECM004 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 3 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Figure 1 Pout vs. Gain Using CDMA Signal 30 1.85GHz 25°C Gain (dB) 25 1.88GHz 25°C 1.91GHz 25°C 20 1.85GHz -40°C 1.88GHz -40°C 15 1.91GHz -40°C 10 1.85GHz 85°C 1.88GHz 85°C 5 1.91GHz 85°C 0 0 5 10 15 16 20 25 28 28.5 29 Pout (dBm) Figure 2 Pout vs. PAE Using CDMA Signal 45 40 1.85GHz 25°C 35 1.88GHz 25°C 1.91GHz 25°C % eff 30 1.85GHz -40°C 25 1.88GHz -40°C 20 1.91GHz -40°C 15 1.85GHz 85°C 10 1.88GHz 85°C 5 1.91GHz 85°C 0 0 5 10 15 20 25 30 Pout (dBm) SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 4 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Figure 3 Pout vs. ACPR1 @ Pout 28.5dBm 0 1.85GHz 25°C dBc -10 1.88GHz 25°C -20 1.91GHz 25°C -30 1.85GHz -40°C -40 1.88GHz -40°C -50 1.91GHz -40°C -60 1.85GHz 85°C 1.88GHz 85°C -70 1.91GHz 85°C -80 0 5 10 15 16 20 25 28 28.5 29 Pout (dBm) Figure 4 IOP vs. Temperature vs. Frequency @ Pout 28.5dBm Icc (mA) 580 570 560 550 540 530 520 510 1.85GHz 1.88GHz 1.91GHz 500 490 480 -40°C 25°C 85°C Temperature SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 5 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Figure 5 Gain (dB) GCDMA vs. Temperature vs. Frequency @ Pout 28.5dBm 29 28.5 28 27.5 27 26.5 26 25.5 25 24.5 24 -40°C 25°C 85°C 1.85GHz 1.88GHz 1915GHz Temperature Figure 6 ACPR1 vs. Temperature vs. Frequency @ Pout 28.5dBm -44 ACPR1 (dBc) -45 -46 -47 -40°C -48 25°C -49 85°C -50 -51 -52 1.85GHz 1.88GHz 1915GHz Temperature SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 6 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Figure 7 GCDMA vs. Temperature vs. Frequency @ Pout 28.0dBm 28.5 28 Gain (dB) 27.5 27 -40°C 26.5 25°C 26 85°C 25.5 25 24.5 1.85GHz 1.88GHz 1915GHz Temperature Figure 8 IOP vs. Temperature vs. Frequency @ Pout 28.0dBm 540 530 Icc (mA) 520 510 1.85GHz 500 1.88GHz 490 1915GHz 480 470 460 -40°C 25°C 85°C Temperature SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 7 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Figure 9 ACPR1 (dBc) ACPR1 vs. Temperature vs. Frequency @ Pout 28.0dBm -44 -45 -46 -47 -48 -49 -50 -51 -52 -53 -54 1.85GHz -40°C 25°C 85°C 1.88GHz 1915GHz Temperature SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 8 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE PCB LAYOUT 1. The front side of the pcb ground area under the PAM requires the use of multiple vias to provide low thermal resistance to the backside of the pcb ground. EVAL BOARD SCHEMATIC SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 9 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE PIN 1 2 3 FUNCTION Vcc1 RF In Vref / Vpd 4 5 6 7 Vcc2 RF Out GND GND Notes: DESCRIPTION PIN 1 connects to the driver stage HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the bias circuit. No significant amplifier current is drawn until Vref reaches approximately 2.5V. Vcc2 connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a 50 ohm load impedance. Ground Ground. This ground also serves as heat sink and must connect well to the PCB RF ground and heat sink. All supply pins may be connected together at the supply. SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 10 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE ECM004 Operating Principles and Key Features ECM004 is a 6x6mm size Power Amplifier Module (PAM) for the PCS band CDMA handset market.. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides excellent reliability and is used in the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The surface defect density in InGaP is much lower than that of AlGaAs. The HBT life test of EiC InGaP HBT has gone through 315oC junction temperature and 50kA/cm2 for over 6000 hours (8 ½ months), translating to multimillion hours lifetime or longer in the operation envelope [1]. This kind of robust performance is far superior to conventional AlGaAs HBT. The InGaP HBT PAM goes through a product burn-in test as well. A large sample group, usually 100 pieces, goes through burn-in test at an ambient temperature of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test results. The agreement between the MTTF of HBT from life test and the FIT is essential: it validates both tests! If there is a large discrepancy [2], the quality claim may be flawed. Although handset applications do not have as stringent operating requirements as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the user of a high quality product designed for high volume production. II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation Current gain of InGaP HBT varies about 10% over –40 to +85oC range, compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled with the patent-pending circuit design approach, provides for more stable electrical performance. III. ECM004 Offers High Gain and Margin for Transmitter Chain Design The typical gain of the ECM004 is 27dB. This high gain allows the driver amplifier to run very linear which results in reduced current. Taking into account the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm. SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 11 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE If a lower gain PAM is used, the driver needs to provide more power, at the expense of more operation current and possible degradation in ACPR. Therefore the ECM004 can replace a lower gain PAM, this allows the driver to work at a lower output power and provide better ACPR, this improved performance offers more design margin in the transmitter chain. IV. Easy Shut Down and Low Leakage Current The Vcc pin of the PAM is connected directly to the battery, therefore a shut down FET is not required. A voltage is applied to the Vref pin, which then brings up the quiescent current. Removing the voltage applied to Vref pin, the quiescent current will drop to a small leakage current, typically <10uA. The low leakage current of the PAM allows for a longer standby time for the phone. V. General Application The PAM requires a minimal number of external components. Both the input and output are dc-blocked within the PAM as shown in the function diagram. The input pin is connected to ground through a shunt inductor within the PAM. ECM004 is designed with a low quiescent current of 80mA typical. At full CDMA power of 28dBm, the operation current will be greater than 500mA. Therefore it is a “quasi class B” or “deep class AB” amplifier. The operation current increases with output power. CDMA signal has a time varying amplitude. The peak power is 4dB above the average RF power (it can be more accurately defined by PDF, power density function). As the peak power is clipped by the amplifier saturation power level, the distortion of the signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 28 dBm of output power. A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large capacitor (>uF) is required. The CDMA signal has a time-varying amplitude; therefore the PAM draws on operation current corresponding to the instantaneous demand by the RF power. The large capacitor near-by is the electric charge reservoir, providing current on demand. The long electrical path from battery behaves as a large inductor; the instantaneous demand on current will cause a voltage drop, resulting in poor ACPR. SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 12 PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE On the evaluation board, a large shunt capacitor is added to protect the Vref pin from power supply over-voltage during ON/OFF. This is similar but different from the ESD. Therefore the rise and fall time test of the power down feature needs to be tested with the shunt capacitor on Vref pin removed. Conclusion ECM004 offers high gain, low quiescent current, and a small footprint. The InGaP technology provides excellent reliability and quality, assuring the phone set manufacturer a high quality product designed for high volume production. 1. “InGaP HBTs offer Enhanced Reliability”, Barry Lin, Applied Microwave and Wireless. pp 115-116, Dec. 2000 2.” Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs”, Darrell Hill and John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244 APPLICATION NOTES Please visit our website at www.eiccorp.com to view or download the following documents. You may also call our Customer Service to request a hardcopy. Document # Description AP-000513-000 Tape and Reel Specifications: PAMS AP-000516-000 Application Note Index SS-000371-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 13