PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Features Features Korea PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28.0 dBm CDMA Power 35% CDMA Efficiency Power-down Capability Quiescent Current Control Wide Range Vref/pd Low Ipd, Typically 1 mA Better Efficiency at Low Power Temperature compensation circuit for Icq Applications Description 3.5 V PCS Handsets The ECM018 is a power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Heterojunction Bipolar Transistor (HBT) process. It is optimized for the Korea PCS in the 1750MHz to 1780MHz band. It operates from a positive voltage (3 - 4V Vcc) and includes a power-down feature. The input and output are both matched to 50Ω. It is housed in a 6 X 6 mm Land Grid Array package. A Q control pin switches the quiescent current to 50mA for low output power range. Electrical Specifications o Test Conditions: Ta = 25 C, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +2.9 V, F = 1750 to 1780 MHz SYMBOL LIMITS PARAMETER MIN. TYP. MAX. UNIT TEST CONDITION Frequency 1750 1780 MHz Gain (CDMA Modulation) 25 27 dB Output Power (CDMA) NOTE 1 28 dBm Adjacent Channel Power Rejection NOTE 2 -50 dBc Power Added Efficiency (CDMA) @ 28.0 dBm High Power Mode 35 % Low Power Efficiency (CDMA) @ 16.0 dBm Low Power Mode 9 % Output Load Stability 6:1 All phase angles -60 dBc Tolerance for output VSWR Mismatch No Damage 10:1 Quiescent Current (No RF) Low Power Mode ICQ 50 70 mA Quiescent Current (No RF) High Power Mode ICQ 120 150 mA Leakage Current (No RF) Vcc = 3.5V Vref = 0V 7 20 uA Vref/pd Supply Current Ipd 1 mA Vref/pd Supply Voltage VREF/ PD 2.9 V Supply Voltage Vcc 3.2 3.5 4.2 V Vq Voltage (High Power Mode) Vq 0.0 0.8 V Vq Voltage (Low Power Mode) Vq 2.0 2.9 V Input Return Loss IRL 10 dB Noise Figure NF 5 dB Noise Power -136 -134 dBm/Hz Harmonics, 2f, 3f, 4f -40 dBc Power Down On/Off Time TON/OFF <100 ns Switching time between output power levels Thi/Low 6 usec NOTE 1: Using Application Schematic. Tuned for CDMA. NOTE 2: @ 1.25MHz offset, Pri. Ch. bandwidth =1.23MHz, Adj. Ch. bandwidth = 30KHz Pout ≤ 28dBm, High/Low mode F G P ACPR PAE1 PAE2 SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE TOP VIEW X X3 X3 X2 X2 X1 BOTTOM SIDE GROUND PAD X1 SYMBOL X 1 Y2 CL Y1 X1 X2 X3 Y Y1 Y2 Y3 Y4 7 8 Y4 2 Y CL 6 Y3 Y2 Y1 3 4 5 ENGLISH inch .004 .232 .055 .095 .116 .232 .095 .116 .055 .150 METRIC mm 0.1 5.89 1.40 2.41 2.95 5.89 2.41 2.95 1.40 3.81 BOTTOM SIDE PAD .036" x .030" (.91mm x .76mm) .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) PIN 1 INDICATOR EiC xxxx ECM018 XXXX XXXX LOT NUMBER PINOUT PIN 1 Vcc1 PIN 2 RFin PIN 3 Vpd PIN 4 Vq PIN 5 Vcc2 PIN 6 RFout PIN 7 Gnd PIN 8 Gnd TOP VIEW WITH MARKING DIAGRAM SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE PCB LAYOUT 1. The front side of the pcb ground area under the PAM requires the use of multiple vias to provide low thermal resistance to the backside of the pcb ground. EVAL BOARD J3 J2 RFout C7 C6 RFin C4 C5 60-000481-000(1) C9 C8 C1 C3 + J1 Vpd Vq G Vcc QTY 4 4 1 2 1 1 1 DESIGNATOR C1, C4, C6, C8 C3, C5, C7, C9 C2 J2, J3 U1 --J1 VALUE 100pF 1.0uF 10 uF ECM018 ------- C2 DESCRIPTION CAPACITOR, 0603 CAPACITOR, 0603 CAPACITOR, 6032 SMA CONNECTOR IC 26 GA, WIRE .5” CONNECTOR, RT. ANG PCB MANUFACTURER &P/N ROHM MCH185A101JK ROHM MCH182F105ZK PANASONIC ECS-HICC106R CDI 5260CC EiC Corp ANY SULLINS PZC04SGAN EiC Corp 60-000481-000(1) NOTE 1 NOTE 1 NOTE 1 NOTE 1 1. EiC RECOMMENDED COMPONENTS ARE SHOW. EQUIVALENT COMPONENTS MAY BE USED. NOTES: UNLESS OTHERWISE SPECIFIED SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 3 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE SCHEMATIC SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 4 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE ECM018 Gain vs. Pout(Hi-Low) 30 Gain(dB) 1.75GHz, 25C 25 1.78GHz, 25C 1.75GHz, -40C 1.78GHz, -40C 1.75GHz, 85C 20 1.78GHz, 85C 15 0 5 10 15 20 25 30 35 Pout(dBm) ECM018 PAE vs .Pout(Hi-Low) 100 90 80 1.75GHz, 25C 70 1.78GHz,25C PAE 60 1.75GHz, -40C 50 1.78GHz, -40C 40 1.75GHz, 85C 30 1.78GHz, 85C 20 10 0 0 5 10 15 20 25 30 Pout(dBm) SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 5 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE ECM018 ACPR vs .Pout(Hi-Low) -40 -45 1.75GHz, 25C ACPR(dBc) -50 1.78GHz, 25C -55 1.75GHz, -40C -60 1.78GHz, -40C 1.75GHz, 85C -65 1.78GHz, 85C -70 -75 0 5 10 15 20 25 30 Pout(dBm) SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 6 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE ECM018 Operating Principles and Key Features ECM018 is a 6x6mm size Power Amplifier Module (PAM) for cellular band CDMA (digital) and AMPS (analog) handset market.. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides excellent reliability and is used in the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The surface defect density in InGaP is much lower than that of AlGaAs. The HBT life test of EiC InGaP HBT has gone through 315oC junction temperature and 50kA/cm2 for over 6000 hours (8 ½ months), translating to multi-million hours lifetime or longer in the operation envelope [1]. This kind of robust performance is far superior to conventional AlGaAs HBT. The InGaP HBT PAM goes through a product burn-in test as well. A large sample group, usually 100 pieces, goes through burn-in test at an ambient temperature of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test results. The agreement between the MTTF of HBT from life test and the FIT is essential: it validates both tests! If there is a large discrepancy [2], the quality claim may be flawed. Although handset applications do not have as stringent operating requirements as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the user of a high quality product designed for high volume production. II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation Current gain of InGaP HBT varies about 10% over –40 to +85oC range, compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled with the patent-pending circuit design approach, provides for more stable electrical performance. III. ECM018 Offers High Gain and Margin for Transmitter Chain Design The typical gain of the ECM018 is 27dB. This high gain allows the driver amplifier to run very linear which results in reduced current. Taking into account the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm. SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 7 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE If a lower gain PAM is used, the driver needs to provide more power, at the expense of more operation current and possible degradation in ACPR. Therefore the ECM018 can replace a lower gain PAM, this allows the driver to work at a lower output power and provide better ACPR, this improved performance offers more design margin in the transmitter chain. IV. Easy Shut Down and Low Leakage Current The Vcc pin of the PAM is connected directly to the battery, therefore a shut down FET is not required. A voltage is applied to the Vref pin, which then brings up the quiescent current. A Q control pin switches the quiescent current to 50mA for the low output power range. The low power range is below 16dBm; the high power range is from 16dBm to full power. Removing the voltage applied to Vref pin, the quiescent current will drop to a small leakage current, typically <10uA. The low leakage current of the PAM allows for a longer standby time for the phone. V. General Application The PAM requires a minimal number of external components. Both the input and output are dc-blocked within the PAM as shown in the function diagram. The input pin is connected to ground through a shunt inductor within the PAM. ECM018 is designed with a low quiescent current of 50mA typical in the low power mode. At full CDMA power of 28dBm, the operation current will be greater than 500mA. Therefore it is a “quasi class B” or “deep class AB” amplifier. The operation current increases with output power. CDMA signal has a time varying amplitude. The peak power is 4dB above the average RF power (it can be more accurately defined by PDF, power density function). As the peak power is clipped by the amplifier saturation power level, the distortion of the signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 28 dBm of output power. A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large capacitor (>uF) is required. The CDMA signal has a time-varying amplitude; therefore the PAM draws on operation current corresponding to the instantaneous demand by the RF power. The large capacitor near-by is the electric charge reservoir, providing current on demand. The long electrical path from battery behaves as a large inductor; the instantaneous demand on current will cause a voltage drop, resulting in poor ACPR. On the evaluation board, a large shunt capacitor is added to protect the Vref pin from power supply over-voltage during ON/OFF. This is similar but different from the ESD. Therefore the rise and fall time test of the power down feature needs to be tested with the shunt capacitor on Vref pin removed. SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 8 PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Conclusion ECM018 offers high gain, low quiescent current, and a small footprint. The InGaP technology provides excellent reliability and quality, assuring the phone set manufacturer a high quality product designed for high volume production. Reference 1. “InGaP HBTs offer Enhanced Reliability”, Barry Lin, Applied Microwave and Wireless. pp 115-116, Dec. 2000 2.” Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs”, Darrell Hill and John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244 APPLICATION NOTES Please visit our website at www.eiccorp.com to view or download the following documents. You may also call our Customer Service to request a hardcopy. Document # Description AP-000513-000 Tape and Reel Specifications: PAMS AP-000516-000 Application Note Index SS-000446-000 Revision C EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 9