ONSEMI BAW56LT3

Transys
Electronics
L I M I T E D
SOT-23 Plastic-Encapsulate Diodes
BAW56LT1
SWITCHING DIODE
SOT-23
FEATURES
Power dissipation
1. 0
mW (Tamb=25℃)
Forward Current
200 m A
IF:
Reverse Voltage
70
V
VR:
Operating and storage junction temperature range
0. 4
0. 95
2. 9
2. 4
1. 3
1. 9
225
PD:
0. 95
TJ, Tstg: -55℃ to +150℃
Unit: mm
Mar ki ng A1
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Diode
leakage current
voltage
capacitance
Reverse recovery time
Symbol
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 100µA
IR
VR=70V
2.5
IF=1mA
715
VF
IF=10mA
855
IF=50mA
1000
IF=150mA
1250
VR=0V, f=1MHz
2
pF
6
nS
CD
t
rr
70
V
µA
mV