KI SEMICONDUCTOR CO. SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD : 0. 95 TJ,Tstg: -55℃ to +150℃ Unit: mm Marking ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Test conditions MIN MAX UNIT IR= 100µA IR VR=80V 0.5 µA voltage VF IF=100mA 1.2 V capacitance CD 4 pF 4 nS Reverse voltage Diode unless otherwise specified) V(BR) Reverse breakdown voltage Forward Symbol D3 leakage current Reverse recovery time t rr VR=0V f=1MHz 80 V