TPD4112K
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
TPD4112K
The TPD4112K is a DC brush less motor driver using high
voltage PWM control. It is fabricated by high voltage SOI process.
It contains bootstrap circuit, PWM circuit, 3-phase decode logic,
level shift high-side driver, low-side driver, IGBT outputs, FRDs,
over current and under voltage protection circuits, and thermal
shutdown circuit.
It is easy to control a DC brush less motor by applying a signal
from a motor controller and a hall amp/ hall IC to the
TPD41112K.
Features
•
Bootstrap circuit gives simple high side supply.
•
Bootstrap diode is built in.
•
PWM and 3-phase decoder circuit are built in.
•
3-phase bridge output using IGBTs.
•
Outputs Rotation pulse signals.
•
FRDs are built in.
•
Incorporating over current and under voltage protection, and
thermal shutdown.
•
Package: 23-pin HZIP.
•
It corresponds to the hall amp input and the hall IC input.
This product has a MOS structure and is sensitive to
electrostatic discharge. When handling this product, ensure that
the environment is protected against electrostatic discharge.
Weight
HZIP23-P-1.27F : 6.1 g (typ.)
HZIP23-P-1.27G : 6.1 g (typ.)
HZIP23-P-1.27H : 6.1 g (typ.)
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2005-11-04
TPD4112K
Pin Assignment
1
VS
2
3
4
5
6
7
OS RREF GND VREG VCC IS1
8
U
12
13
14
BUS VBB1 BSV V
9
10
11
W
BSW VBB2 IS2
15
16
17
18
19
20
21
22
23
FG HU+ HU- HV+ HV- HW+ HW-
Marking
Lot No.
TPD4112K
JAPAN
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2005-11-04
TPD4112K
Block Diagram
VCC 6
9
BSU
11 BSV
14 BSW
6V
regulator
VREG 5
Under- Under- Undervoltage voltage voltage
protect- protect- protection
ion
ion
Under-voltage
Protect-ion
HV+ 20
HV‐21
Hall
Amp
3-phase
distribution
Thermal
logic
shutdown
HW+ 22
Low-side
driver
FG 17
OS 2
RREF 3
8 U
12 V
13 W
HW‐23
VS 1
15 VBB2
Level shift
high-side
driver
HU+ 18
HU‐19
10 VBB1
PWM
16 IS2
Triangular
wave
Over current
protection
3
7 IS1
4 GND
2005-11-04
TPD4112K
Pin Description
Pin No.
Symbol
Pin Description
1
VS
Speed control signal input pin. (PWM reference voltage input pin)
2
OS
PWM triangular wave oscillation frequency setup pin (Connect a capacitor to this pin.)
3
RREF
PWM triangular wave oscillation frequency setup pin (Connect a resistor to this pin.)
4
GND
Ground pin
5
VREG
6 V regulator output pin
6
VCC
Control power supply pin
7
IS1
IGBT emitter/FRD anode pin (Connect a current detecting resistor to this pin.)
8
U
9
BUS
U-phase bootstrap capacitor connecting pin
10
VBB1
U and V-phase high-voltage power supply input pin
11
BSV
V-phase bootstrap capacitor connecting pin
12
V
V-phase output pin
13
W
W-phase high-voltage power supply input pin
14
BSW
W-phase bootstrap capacitor connecting pin
15
VBB2
W-phase high-voltage power supply input pin
16
IS2
IGBT emitter/FRD anode pin (Connect a current detecting resistor to this pin.)
17
FG
Rotation pulse output pin. (open drain)
18
HU+
U-phase hall sensor signal input pin (Hall IC can be used.)
19
HU-
U-phase hall sensor signal input pin (Hall IC can be used.)
20
HV+
V-phase hall sensor signal input pin (Hall IC can be used.)
21
HV-
V-phase hall sensor signal input pin (Hall IC can be used.)
22
HW+
W-phase hall sensor signal input pin (Hall IC can be used.)
23
HW-
W-phase hall sensor signal input pin (Hall IC can be used.)
U-phase output pin
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2005-11-04
TPD4112K
Equivalent Circuit of Input Pins
Internal circuit diagram of HU+, HU-, HV+, HV-, HW+, HW- input pins
VCC
To internal circuit
HU+, HU-,
HV+, HV-,
HW+, HW-,
10 kΩ
13 V
2 kΩ
13 V
Internal circuit diagram of VS pin
VCC
To internal circuit
4 kΩ
150 kΩ
6.5 V
75 kΩ
VS
6.5 V
Internal circuit diagram of FG pin
FG
To internal circuit
26 V
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2005-11-04
TPD4112K
Timing Chart
HU
HV
Hall amp
input
HW
VU
Out put voltage
VV
VW
Rotation pulse
FG
* : As for "H", a hall amp input state shows the state of IN+>IN−.
Truth Table
Hall amp Input
U Phase
V Phase
W Phase
HU
HV
HW
Upper
Arm
Lower
Arm
Upper
Arm
Lower
Arm
Upper
Arm
Lower
Arm
FG
H
L
H
ON
OFF
OFF
ON
OFF
OFF
L
H
L
L
ON
OFF
OFF
OFF
OFF
ON
H
H
H
L
OFF
OFF
ON
OFF
OFF
ON
L
L
H
L
OFF
ON
ON
OFF
OFF
OFF
H
L
H
H
OFF
ON
OFF
OFF
ON
OFF
L
L
L
H
OFF
OFF
OFF
ON
ON
OFF
H
L
L
L
OFF
OFF
OFF
OFF
OFF
OFF
L
H
H
H
OFF
OFF
OFF
OFF
OFF
OFF
L
* : As for "H", a hall amp input state shows the state of IN+>IN−.
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2005-11-04
TPD4112K
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
Output current (DC)
Symbol
Rating
Unit
VBB
500
V
VCC
20
V
Iout
1
A
Output current (pulse)
Iout
2
A
Input voltage (except VS)
VIN
−0.5 to VREG + 0.5
V
Input voltage (only VS)
VVS
8.2
V
VREG current
IREG
50
mA
Power dissipation (Ta = 25°C)
PC
4
W
Power dissipation (Tc = 25°C)
PC
20
W
Operating junction temperature
Tjopr
−20 to 135
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
Lead-heat sink isolation voltage
Vhs
1000 (1 min)
Vrms
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TPD4112K
Electrical Characteristics (Ta = 25°C)
Characteristics
Operating power supply voltage
Current dissipation
Hall amp input sensitivity
Hall amp Input current
Symbol
Test Condition
Min
Typ.
Max
VBB
⎯
50
⎯
400
VCC
⎯
13.5
15
17.5
IBB
VBB = 400 V
Duty cycle = 0%
⎯
⎯
0.5
ICC
VCC = 15 V
Duty cycle = 0%
⎯
1.8
10
IBS (ON)
VBS = 15 V, high side ON
⎯
210
470
IBS (OFF)
VBS = 15V, high side OFF
⎯
200
415
50
⎯
⎯
mvp-p
IHB(HA)
⎯
-2
0
2
µA
⎯
8
V
30
50
25
0
Hall amp hysteresis width
ΔVIN(HA)
20
Hall amp input voltage L→H
VLH(HA)
5
15
Hall amp input voltage H→L
VHL(HA)
FRD forward voltage
PWM ON-duty cycle
PWM ON-duty cycle, 0%
PWM ON-duty cycle, 100%
PWM ON-duty voltage range
Output all-OFF voltage
Regulator voltage
mA
⎯
CMVIN(HA)
FRD forward voltage
V
VHSENS(HA)
Hall amp this minister input
Output saturation voltage
Unit
-15
-15
-5
VCEsatH
VCC = 15 V, IC = 0.5 A
⎯
2.3
3.0
VCesatL
VCC = 15 V, IC = 0.5 A
⎯
2.3
3.0
VFH
IF = 0.5 A, high side
⎯
1.4
2.1
VFL
IF = 0.5 A, low side
⎯
1.4
1.8
IF = 500 µA
⎯
0.8
1.2
VF (BSD)
mV
V
V
V
PWMMIN
⎯
0
⎯
⎯
PWMMAX
⎯
⎯
⎯
100
PWM = 0%
1.7
2.1
2.5
V
PWM = 100%
4.9
5.4
6.1
V
VVS100% − VVS0%
2.8
3.3
3.8
V
Output all OFF
1.1
1.3
1.5
V
5
6
7
V
0
⎯
6.5
V
⎯
⎯
0.5
V
VVS0%
VVS100%
VVSW
VVSOFF
VREG
Speed control voltage range
VS
FG output saturation voltage
VFGsat
VCC = 15 V, IO = 30 mA
⎯
VCC = 15 V, IFG = 20 mA
%
VR
⎯
0.46
0.5
0.54
V
TSD
⎯
135
⎯
185
°C
Thermal shutdown hysteresis
∆TSD
⎯
⎯
50
⎯
°C
VCC under voltage protection
VCCUVD
⎯
10
11
12
V
VCC under voltage protection recovery
VCCUVR
⎯
10.5
11.5
12.5
V
VBS under voltage protection
VBSUVD
⎯
9
10
11
V
VBS under voltage protection recovery
VBSUVR
⎯
9.5
10.5
11.5
V
Current control voltage
Thermal shutdown temperature
Refresh operating ON voltage
TRFON
Refresh operation
1.1
1.3
1.5
V
Refresh operating OFF voltage
TRFOFF
Refresh operation OFF
3.1
3.8
4.6
V
Triangular wave frequency
fc
R = 27 kΩ, C = 1000 pF
16.5
20
25
kHz
Output on delay time
ton
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
2.5
3
µs
Output off delay time
toff
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
1.8
3
µs
FRD reverse recovery time
trr
VBB = 280 V, VCC = 15 V, IC = 0.5 A
⎯
200
⎯
ns
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2005-11-04
TPD4112K
Application Circuit Example
15 V
VCC
BSU
6
9
C5
11
14
VREG
6V
regulator
5
C6
R3
Under-voltage
Protect-ion
HU+
18
C7
19
HV+
20
C7
21
HW+
22
C7
23
Rotation
pulse
FG
Speed
instruction
VS
OS
RREF
C4
Under- Under- Undervoltage voltage voltage
protect- protect- protection
ion
ion
10
15
BSV
BSW
VBB1
VBB2
C1 C2 C3
Level shift
high-side
driver
Hall
Amp
3-phase
Thermal
distribution
shutdown
8
12
13
logic
U
M
V
W
Low-side
driver
17
1
PWM
2
Triangular
3
wave
16
Over current
protection
7
IS2
IS1
4
R1
GND
R2
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2005-11-04
TPD4112K
External Parts
Standard external parts are shown in the following table.
Part
Recommended Value
C1, C2, C3
25 V/2.2 µF
R1
Purpose
Remarks
Bootstrap capacitor
(Note 1)
0.62 Ω ± 1% (1 W)
Current detection
(Note 2)
C4
10 V/1000 pF ± 5%
PWM frequency setup
(Note 3)
R2
27 kΩ ± 5%
PWM frequency setup
(Note 3)
C5
25 V/10 µF
Control power supply stability
(Note 4)
C6
10 V/0.1 µF
VREG power supply stability
(Note 4)
R3
5.1 kΩ
FG pin pull-up resistor
(Note 5)
C7
TBD
Input power supply stability
(Note 6)
Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. The IC can
operate at above the VBS undervoltage level, however, it is recommended that the capacitor voltage be
greater than or equal to 13.5 V to keep the power dissipation small. The capacitor is biased by VCC and
must be sufficiently derated for it.
Note 2: The following formula shows the detection current: IO = VR ÷ RIS (VR = 0.5 V typ.)
Do not exceed a detection current of 1 A when using the IC.
Note 3: With the combination of Cos and RREF shown in the table, the PWM frequency is around 20 kHz. The IC
intrinsic error factor is around 10%.
The PWM frequency is broadly expressed by the following formula. (In this case, the stray capacitance of
the printed circuit board needs to be considered.)
fPWM = 0.65 ÷ {Cos × (RREF + 4.25 kΩ)} [Hz]
RREF creates the reference current of the PWM triangular wave charge/discharge circuit. If RREF is set too
small it exceeds the current capacity of the IC internal circuits and the triangular wave distorts. Set RREF to
at least 9 kΩ.
Note 4: When using the IC, some adjustment is required in accordance with the use environment. When mounting,
place as close to the base of the IC leads as possible to improve the noise elimination.
Note 5: The FG pin is open drain. Note that when the FG pin is connected to a power supply with a voltage higher
than or equal to the VCC, a protection circuit is triggered so that the current flows continuously. If not using
the FG pin, connect to the GND.
Note 6: If noise is detected on the Input signal pin, add a capacitor between inputs.
Handling precautions
(1)
(2)
(3)
(4)
When switching the power supply to the circuit on/off, ensure that VS < VVSOFF (all IGBT outputs
off). At that time, either the VCC or the VBB can be turned on/off first. Note that if the power supply is
switched off as described above, the IC may be destroyed if the current regeneration route to the VBB
power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is
still running.
The triangular wave oscillator circuit, with externally connected COS and RREF, charges and
discharges minute amounts of current. Therefore, subjecting the IC to noise when mounting it on the
board may distort the triangular wave or cause malfunction. To avoid this, attach external parts to
the base of the IC leads or isolate them from any tracks or wiring which carries large current.
The PWM of this IC is controlled by the on/off state of the high-side IGBT.
In the state where VBB voltage is low, and Duty100%, if a motor is made to lock, after load release
may be unable to reboot. This is the high side ON of a just before lock, when a motor is locked in the
state where VBB voltage is low. It is because time becomes long, bootstrap voltage falls, the decrease
voltage protection of a high side operates and a high side output serves as OFF. In this case, since the
level shift pulse for making a high side turn on is ungenerable, it cannot reboot. A level shift pulse is
generated from the edge of a hole sensor output and the edge of a hall sensor output edge of an
internal PWM signal, neither of the edge exists by the motor lock and Duty100% command. In order
to reboot after locke, it is required for a high side input signal to enter in the state where it recovered
to voltage with high side power supply voltage higher 0.5v than a decrease voltage protection voltage
value. Since a high side input signal is created by the above-mentioned level shift pulse, it can reboot
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2005-11-04
TPD4112K
by making Duty of PWM less than 100%, or turning a motor from the outside compulsorily, and
creating edge to a hall sensor output. In order to enable the reboot after a lock as a system, it is
necessary to restrict and obtain on motor specification so that the maximum of Duty may become less
than 100%.
Description of Protection Function
(1)
Over current protection
The IC incorporates the over current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current detection
resistor connected to the IS pin. When this voltage exceeds VR = 0.5 V (typ.), the high-side IGBT
output, which is on, temporarily shuts down after a mask period, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
Duty ON
PWM reference voltage
Duty OFF
Triangle wave
Mask period + tOFF
tOFF
tON
tON
Over current setting value
Output current
Retry
Over current shutdown
(2)
(3)
Under voltage protection
The IC incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the VCC voltage or the VBS voltage drops.
When the VCC power supply falls to the IC internal setting (VCCUVD = 11 V typ.), all IGBT outputs
shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5
V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the
IGBT is turned on again by the input.
When the VBS supply voltage drops (VBSUVD = 10 V typ.), the high-side IGBT output shuts down.
When the VBSUVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
turned on again by the input signal.
Thermal shutdown
The IC incorporates the thermal shutdown circuit to protect itself against the abnormal state when
its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD, all IGBT outputs shut down regardless of the input. This protection function
has hysteresis (∆TSD = 50°C typ.). When the chip temperature falls to TSD − ∆TSD, the chip is
automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
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2005-11-04
TPD4112K
Description of Bootstrap Capacitor Charging and Its Capacitance
The IC uses bootstrapping for the power supply for high-side drivers.
The bootstrap capacitor is charged by turning on the low-side IGBT of the same arm (approximately 1/5 of PWM
cycle) while the high-side IGBT controlled by PWM is off. (For example, to drive at 20 kHz, it takes approximately
10 ms per cycle to charge the capacitor.) When the VS voltage exceeds 3.8 V (55% duty), the low-side IGBT is
continuously in the off state. This is because when the PWM on-duty becomes larger, the arm is short-circuited
while the low-side IGBT is on. Even in this state, because PWM control is being performed on the high-side IGBT,
the regenerative current of the diode flows to the low-side FRD of the same arm, and bootstrap capacitor is charged.
Note that when the on-duty is 100%, diode regenerative current does not flow; thus, the bootstrap capacitor is not
charged.
When driving a motor at 100 % duty cycle, take the voltage drop at 100% duty (see the figure below) into
consideration to determine the capacitance of the bootstrap capacitor.
Capacitance of the bootstrap capacitor = Consumption current (max) of the high-side driver × Maximum drive time
/(VCC − VF (BSD) + VF (FRD) − 13.5) [F]
VF (BSD) : Bootstrap diode forward voltage
VF (FRD) : Flywheel diode forward voltage
Care must be taken for aging and temperature change of the capacitor.
Duty cycle 100% (VS: 5.4 V)
Duty cycle 80%
C
Triangular wave
Duty cyle 55% (VS: 3.8 V)
PWM reference voltage
B
Duty cycle 0% (VS: 2.1 V)
VVsOFF (VS: 1.3 V)
Low-side ON
High-side duty ON
A
GND
VS Range
IGBT Operation
A
Both high- and low-side OFF.
B
Charging range. Low-side IGBT refreshing on the phase the high-side IGBT in PWM.
C
No charging range. High-side at PWM according to the timing chart. low-side no refreshing.
(A)
1.1
Peak winding current
1.0
Peak winding current
(A)
Safe Operating Area
0
0
0
400
Power supply voltage
Figure 1
VBB
(V)
0
400
Power supply voltage
SOA at Tj = 135°C
Figure 2
VBB
(V)
SOA at Tc = 95°C
Note 1: The above safe operating areas are Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature
exceeds thsese, the safe operation areas reduce.
Note 2: The above safe operating areas include the over current protection operation area.
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2005-11-04
TPD4112K
VCEsatL – Tj
VCEsatL (V)
VCC = 15 V
IC = 700 mA
3.0
IC = 500 mA
2.6
2.2
IGBT saturation voltage
IGBT saturation voltage
VCEsatH
(V)
VCEsatH – Tj
3.4
IC = 300 mA
1.8
1.4
−20
20
60
Junction temperature
100
Tj
140
3.4
VCC = 15 V
IC = 700 mA
3.0
IC = 500 mA
2.6
2.2
IC = 300 mA
1.8
1.4
−20
(°C)
20
60
Junction temperature
VFL (V)
1.6
IF = 700 mA
1.4
IF = 500 mA
IF = 300 mA
1.2
1.0
0.8
−20
20
60
Junction temperature
100
Tj
IF = 700 mA
1.4
IF = 500 mA
IF = 300 mA
1.2
1.0
(°C)
20
60
Junction temperature
ICC – VCC
(mA)
(V)
25°C
135°C
VREG
2.5
Regulator voltage
ICC
Tj
140
(°C)
−20°C
25°C
135°C
−20°C
Consumption current
100
VREG – VCC
7.0
2.0
1.5
14
(°C)
1.6
0.8
−20
140
3.0
1.0
12
Tj
140
VFL – Tj
FRD forward voltage
FRD forward voltage
VFH
(V)
VFH – Tj
100
16
Control power supply voltage
(V)
Ireg = 30 mA
6.0
5.5
5.0
12
18
VCC
6.5
14
16
Control power supply voltage
13
18
VCC
(V)
2005-11-04
TPD4112K
tON – Tj
tOFF – Tj
3.0
High-side
Low-side
tOFF
(µs)
2.0
1.0
VBB = 280 V
VCC = 15 V
IC = 0.5 A
High-side
Low-side
0
−20
20
2.0
Output off delay time
tON
Output on delay time
VBB = 280 V
VCC = 15 V
IC = 0.5 A
(µs)
3.0
60
Junction temperature
100
Tj
1.0
0
−20
140
(°C)
20
Junction temperature
VS – Tj
Tj
140
(°C)
VCCUV – Tj
Under voltage protection operating
voltage VCCUV (V)
PWM on-duty set-up voltage
VS (V)
100
12.5
6.0
VS 100％
4.0
VSW
2.0
VS 0%
VCC = 15 V
0
−20
20
60
Junction temperature
100
Tj
VCCUVD
VCCUVR
12.0
11.5
11.0
10.5
10.0
−20
140
(°C)
20
VBSUV – Tj
100
Tj
140
(°C)
VR – Tj
1.0
Current control operating voltage
VR (V)
VBSUVD
VBSUVR
11.0
10.5
10.0
9.5
9.0
−20
60
Junction temperature
11.5
Under voltage protection operating
voltage VBSUV (V)
60
20
60
Junction temperature
100
Tj
VCC = 15 V
0.8
0.6
0.4
0.2
0
−20
140
(°C)
20
60
Junction temperature
14
100
Tj
140
(°C)
2005-11-04
TPD4112K
IBS – VBS (ON)
IBS – VBS (OFF)
(µA)
−20°C
25°C
IBS (OFF)
135°C
400
Current consumption
Current consumption
IBS (ON) (µA)
500
300
200
100
12
14
16
Control power supply voltage
18
VBS
500
−20°C
25°C
135°C
400
300
200
100
12
(V)
14
16
Control power supply voltage
VF (BSD) – Tj
18
VBS
(V)
Wton – Tj
(µJ)
1.0
Wton
0.9
IF = 700 µA
0.8
0.7
0.6
−20
Turn-on loss
BSD forward voltage
VF (BSD) (V)
125
IF = 500 µA
20
IC = 700 mA
100
75
IC = 500 mA
50
IC = 300 mA
25
IF = 300 µA
60
Junction temperature
100
Tj
0
−20
140
(°C)
20
Junction temperature
Wtoff – Tj
Tj
(°C)
Width
70
40
Hall amplifier Hysteresis
DVIN(HA) (mV)
(µJ)
Wtoff
Turn-off loss
140
100
DVIN(HA)– Tj
50
IC = 700 mA
30
IC = 500 mA
20
IC = 300 mA
10
0
−20
60
20
60
Junction temperature
100
Tj
60
50
40
30
20
−20
140
(°C)
20
60
Junction temperature
15
100
Tj
(°C)
2005-11-04
0.5 A
16
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
0.5 A
27 kΩ
1000 pF
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
TPD4112K
Test Circuits
IGBT Saturation Voltage (U-phase low side)
2.5 V
VM
HU+ = 0 V
HW+ = 5V
HV+ = 5V
VCC = 15 V
VS = 6.1 V
FRD Forward Voltage (U-phase low side)
VM
2005-11-04
30 mA
27 kΩ
1000 pF
17
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
27 kΩ
1000 pF
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
TPD4112K
VCC Current Dissipation
AM
VCC = 15 V
Regulator Voltage
VM
VCC = 15 V
2005-11-04
IM
HV+
0V
2.2 µF
560 Ω
27 kΩ
1000 pF
5V
IM
tON
18
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
TPD4112K
Output ON/OFF Delay Time (U-phase low side)
2.5 V
HU+ = 0 V
HV+ = PG
HW+ = 0 V
U = 280 V
VCC = 15 V
VS = 6.1 V
90%
10%
90%
10%
tOFF
2005-11-04
TPD4112K
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
15 V
HU+ = 5 V
2 kΩ
2. OS
3. RREF
2.5 V
27 kΩ
1000 pF
1. VS
PWM ON-duty Setup Voltage (U-phase high side)
HW+ = 0 V
HV+ = 0 V
VM
VBB = 18 V
VCC = 15 V
VS = 0 V → 6.1 V
6.1 V → 0 V
Note: Sweeps the VS pin voltage to increase and monitors the U pin.
When output is turned off from on, the PWM = 0%. When output is full on, the PWM = 100%.
19
2005-11-04
TPD4112K
23. FG
22. FR
21. HW
20. HV
19. HU
18. IS2
17. VBB2
16. BSW
15. W
14. ⎯ (NC)
13. BSV
12. V
11. VBB1
10. BSU
9. U
8. ⎯ (NC)
7. IS1
6. VCC
5. VREG
4. GND
2 kΩ
2. OS
3. RREF
HU = 5 V
VM
HV = 0 V
HW = 0 V
27 kΩ
1000 pF
1. VS
VCC Under voltage Protection Operation/Recovery Voltage (U-phase low side)
FR = 0 V
U = 18 V
VCC = 15 V → 6 V
6 V → 15 V
VS = 6 V
Note:Sweeps the VCC pin voltage from 15 V to decrease and monitors the U pin voltage.
The VCC pin voltage when output is off defines the under voltage protection operating voltage.
Also sweeps from 6 V to increase. The VCC pin voltage when output is on defines the under voltage
protection recovery voltage.
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
VM
HU+ = 5 V
2 kΩ
2. OS
3. RREF
2.5 V
27 kΩ
1000 pF
1. VS
VBS Under voltage Protection Operation/Recovery Voltage (U-phase high side)
HV+ = 0 V
HW+ = 0 V
VBB = 18 V
BSU = 15 V → 6 V
6 V → 15 V
VCC = 15 V
VS = 6.1 V
Note:Sweeps the BSU pin voltage from 15 V to decrease and monitors the VBB pin voltage.
The BSU pin voltage when output is off defines the under voltage protection operating voltage.
Also sweeps the BSU pin voltage from 6 V to increase and change the VS voltage at 6 V → 0 V → 6V. The
BSU pin voltage when output is on defines the under voltage protection recovery voltage.
20
2005-11-04
TPD4112K
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
HU+ = 5 V
HV+ = 0 V
HW+ = 0 V
VBB = 18 V
2 kΩ
2. OS
3. RREF
2.5 V
15 V
27 kΩ
1000 pF
1. VS
Current Control Operating Voltage (U-phase high side)
VM
IS = 0 V → 0.6 V
VCC = 15 V
VS = 6.1 V
Note:Sweeps the IS pin voltage to increase and monitors the U pin voltage.
The IS pin voltage when output is off defines the current control operating voltage.
21
2005-11-04
27 kΩ
1000 pF
AM
22
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
TPD4112K
VBS Current Consumption (U-phase high side)
2.5 V
HU+ = 5/0 V
HV+ = 0 V
HW+ = 0 V
BSU = 15 V
VCC = 15 V
VS = 6.1 V
2005-11-04
VM
500 µA
23
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
8. U
7. IS1
6. VCC
5. VREG
4. GND
3. RREF
2. OS
1. VS
TPD4112K
BSD Forward Voltage (U-phase)
2005-11-04
TPD4112K
23. HW-
22. HW+
21. HV-
20. HV+
19. HU-
2.5 V
HU+ = 0 V
5 mH
L
18. HU+
17. FG
16. IS2
15. VBB2
14. BSW
13. W
12. V
11. BSV
10. VBB1
9. BSU
2.2 µF
8. U
7. IS1
6. VCC
5. VREG
4. GND
2. OS
3. RREF
VM
27 kΩ
1000 pF
1. VS
Turn-On/Off Loss (low-side IGBT + high-side FRD)
HV+ = PG
HW+ = 0 V
VBB = 280 V
IM
VCC = 15 V
VS = 6.1 V
Input (HV+)
IGBT (C-E voltage)
(U-GND)
Power supply current
Wtoff
Wton
24
2005-11-04
TPD4112K
Package Dimensions
Weight: 6.1 g (typ.)
25
2005-11-04
TPD4112K
Package Dimensions
Weight: 6.1 g (typ.)
26
2005-11-04
TPD4112K
Package Dimensions
Weight: 6.1 g (typ.)
27
2005-11-04
TPD4112K
RESTRICTIONS ON PRODUCT USE
000707EBA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
28
2005-11-04