TPD4113K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4113K The TPD4113K is a DC brushless motor driver using high- voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a level shift high side driver, low side driver, IGBT outputs, FRDs and protective functions for over-current and under-voltage protection circuits, and a thermal shutdown circuit. It is easy to control a DC brush less motor by just putting logic inputs from a MPU or motor controller to the TPD4113K. Features • Bootstrap circuit gives simple high-side supply. • Bootstrap diodes are built in. • A dead time can be set as a minimum of 1.4 μs and it is the best for a Sine-wave from drive. • 3-phase bridge output using IGBTs • FRDs are built in • Included over-current and under-voltage protection, and thermal shutdown • The regulator of 7V (typ.) is built in. • Package: 23-pin HZIP This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. Weight HZIP23-P-1.27F : 6.1 g (typ.) HZIP23-P-1.27G : 6.1 g (typ.) HZIP23-P-1.27H : 6.1 g (typ.) 1 2006-11-01 TPD4113K Pin Assignment 1 HU 2 3 HV HW 4 LU 5 LV 6 LW 7 IS1 8 9 10 11 12 13 14 15 16 17 NC BSU U VBB 1 BSV V BSW W VBB 2 NC 18 19 20 21 22 23 IS2 RS DIAG VCC GND VREG Marking Lot No. TPD4113K JAPAN Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-01 TPD4113K Block Diagram 9 BSU VCC 21 12 BSV 14 BSW VREG 23 7V Regulator Undervoltage Protection HU 1 HV 2 HW 3 11 VBB1 UnderUnderUndervoltage voltage voltage Protection Protection Protection Input Control 16 VBB2 High-side Level Shift Driver Thermal 10 U Shutdown 13 V LU 4 LV 5 LW 6 15 W Low-side Driver DIAG 20 18 IS2 7 IS1 COMP 3 Dead Time 0.5Vref 19 RS 22 GND 2006-11-01 TPD4113K Pin Description Pin No. Symbol Pin Description 1 HU 2 HV 3 HW 4 LU 5 LV 6 LW 7 IS1 IGBT emitter and FRD anode pin. 8 NC Unused pin, which is not connected to the chip internally. 9 BSU 10 U 11 VBB1 U and V-phase high-voltage power supply input pin. 12 BSV V-phase bootstrap capacitor connecting pin. 13 V 14 BSW The control terminal of IGBT by the side of U top arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of V top arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of W top arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of U bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of V bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of W bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. U-phase bootstrap capacitor connecting pin. U-phase output pin. V-phase output pin. W-phase bootstrap capacitor connecting pin. 15 W 16 VBB2 17 NC Unused pin, which is not connected to the chip internally. 18 IS2 IGBT emitter and FRD anode pin. 19 RS Over current detection pin. (Connect a current-detecting resistor to this pin.) 20 Ｗ-phase output pin. W-phase high-voltage power supply input pin. DIAG With the diagnostic output terminal of open drain , a pull-up is carried out by resistance. It turns it on at the time of unusual. 21 VCC Control power supply pin.(15V typ.) 22 GND Ground pin. 23 VREG 7V regulator output pin. 4 2006-11-01 TPD4113K Equivalent Circuit of Input Pins Internal circuit diagram of HU, HV, HW, LU, LV, LW input pins 5 kΩ 5 kΩ 200 kΩ HU/HV/HW LU/LV/LW 2 kΩ To internal circuit 6.5 V 6.5 V 6.5 V 6.5 V Internal circuit diagram of DIAG pin DIAG To internal circuit 26 V Internal circuit diagram of RS pin Vcc RS 5 kΩ 5 kΩ 6.5 V 2 kΩ 6.5 V 440 kΩ To internal circuit 5 pF 5 2006-11-01 TPD4113K Timing Chart HU HV HW Input Voltage LU LV LW VU Output voltage VV VW 6 2006-11-01 TPD4113K Truth Table Input Top arm Mode Over-current Thermal shutdown Under-voltage Notes: DIAG Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＮ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＮ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ ＨＵ ＨＶ ＨＷ ＬＵ ＬＶ ＬＷ Normal Bottom arm Ｕ phase ＯＮ Ｖ phase ＯＦＦ Ｗ phase ＯＦＦ Ｕ phase ＯＦＦ Ｖ phase ＯＮ Ｗ phase ＯＦＦ ＯＦＦ ＯＦＦ Release of Thermal shutdown protection and under voltage protection depends release of a self-reset and over current protection on an all "L" input. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VBB 500 V VCC 18 V Output current (DC) Iout 1 A Output current (pulse) Iout 2 A Input voltage VIN −0.5~7 V VREG current IREG 50 mA Power dissipation (Ta = 25°C) PC 4 W Power dissipation (Tc = 25°C) PC 20 W Power supply voltage Tjopr −20~135 °C Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Lead-heat sink isolation voltage Vhs 1000 (1 min) Vrms Operating temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 7 2006-11-01 TPD4113K Electrical Characteristics (Ta = 25°C) Characteristics Operating power supply voltage Current dissipation Input voltage Input current Output saturation voltage FRD forward voltage Regulator voltage BSD forward voltage Symbol Test Condition Min Typ. Max VBB ⎯ 50 280 450 VCC ⎯ 13.5 15 16.5 Unit V IBB VBB = 450 V ⎯ ⎯ 0.5 ICC VCC = 15 V ⎯ 1.1 5 IBS (ON) VBS = 15 V, high side ON ⎯ 260 410 IBS (OFF) VBS = 15 V, high side OFF ⎯ 230 370 VIH VIN = “H” 3.5 ⎯ ⎯ VIL VIN = “L” ⎯ ⎯ 1.5 IIH VIN = 5Ｖ ⎯ ⎯ 150 IIL VIN = 0 V ⎯ ⎯ 100 VCEsatH VCC = 15 V, IC = 0.5 A ⎯ 2.4 3 VCEsatL VCC = 15 V, IC = 0.5 A ⎯ 2.4 3 VFH IF = 0.5 A, high side ⎯ 1.6 2.0 VFL IF = 0.5 A, low side ⎯ 1.6 2.0 IF = 500μＡ ⎯ 0.9 1.2 V VCC = 15 V, IO = 30 mA 6.5 7 7.5 V VREG VF (BSD) mA μA V μA V V Current limiting voltage VR ⎯ 0.46 0.5 0.54 V Current limiting dead time Dt ⎯ 2.3 3.3 4.4 μs 135 ⎯ 185 ℃ TSD VCC = 15 V Thermal shutdown hysteresis ΔTSD VCC = 15 V ⎯ 50 ⎯ ℃ VCC under-voltage protection VCCUVD ⎯ 10 11 12 V VCC under-voltage protection recovery VCCUVR ⎯ 10.5 11.5 12.5 V VBS under-voltage protection VBSUVD ⎯ 8 9 9.5 V VBS under-voltage protection recovery VBSUVR ⎯ 8.5 9.5 10.5 V DIAG saturation voltage VDIAGsat IDIAG=5mA ⎯ ⎯ 0.5 V Thermal shutdown temperature Output-on delay time ton VBB = 280 V, IC = 0.5 A ⎯ 1.5 3 μs Output-off delay time toff VBB = 280 V, IC = 0.5 A ⎯ 1.2 3 μs tdead VBB = 280 V, IC = 0.5 A 1.4 ⎯ ⎯ μs trr VBB = 280 V, IC = 0.5 A ⎯ 200 ⎯ ns Dead time FRD reverse recovery time 8 2006-11-01 TPD4113K Application Circuit Example 15V VCC 21 + C4 9 12 C5 14 C6+ C7 VREG 23 7V Regulator 11 UnderUnderUndervoltage voltage voltage Protection Protection Protection Undervoltage Protection HU Control IC HV or HW Microcomputer LU LV LW R２ 1 16 Thermal 10 Shutdown 13 6 BSW VBB1 VBB2 C1 C2 C3 3 5 BSV High-side Level Shift Driver 2 4 BSU Input Control 15 U Ｍ V W Low-side Driver 20 DIAG 18 7 COMP 9 Dead Time 0.5Vref 19 22 IS2 IS1 R１ RS GND 2006-11-01 TPD4113K External Parts Standard external parts are shown in the following table. Part Recommended Value Purpose Remarks C1, C2, C3 25 V/2.2 μF Bootstrap capacitor (Note 1) R1 0.62 Ω ± 1% (1 W) Current detection (Note 2) C4 25 V/10 μF VCC power supply stability (Note 3) C５ 25 V /0.1μF VCC for surge absorber (Note 3) C6 16 V/1 μF VREG power supply stability (Note 3) C7 16 V/1000 pF VREG for surge absorber (Note 3) R2 5.1 kΩ FG pin pull-up resistor (Note 4) Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. The capacitor is biased by VCC and must be sufficiently derated for it. Note 2: The following formula shows the detection current: IO = VR ÷ R1 (For VR = 0.5 V ) Do not exceed a detection current of 1 A when using this product. Note 3: When using this product, some adjustment is required in accordance with the use environment. When mounting, place as close to the base of this product leads as possible to improve the ripple and noise elimination. Note 4: The DIAG pin is open drain. Note that when the DIAG pin is connected to a power supply with a voltage higher than or equal to the VCC, a protection circuit is triggered so that the current flows continuously. If the DIAG pin is not used, connect to the GND. Handling precautions (1) (2) Please control the input signal in the state to which the VCC voltage is steady. Both of the order of the VBB power supply and the VCC power supply are not cared about either. Note that if the power supply is switched off as described above, this product may be destroyed if the current regeneration route to the VBB power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is still running. The RS pin connecting the current detection resistor is connected to a comparator in the IC and also functions as a sensor pin for detecting over current. As a result, over voltage caused by a surge voltage, for example, may destroy the circuit. Accordingly, be careful of handling the IC or of surge voltage in its application environment. 10 2006-11-01 TPD4113K Description of Protection Function (1) Over-current protection This product incorporates the over-current protection circuit to protect itself against over-current at startup or when a motor is locked. This protection function detects voltage generated in the current detection resistor connected to the RS pin. When this voltage exceeds VR = 0.5 V (typ.), the IGBT output, which is on, temporarily shuts down after a dead time , preventing any additional current from flowing to this product. The next all “L” signal releases the shutdown state. Under-voltage protection This product incorporates an under-voltage protection circuit to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to this product internal setting (VCCUVD = 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is automatically restored and the IGBT is turned on/off again by the input. When the VBS supply voltage drops (VBSUVD = 9 V typ.), the high-side IGBT output shuts down. When the VBSUVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is turned on/off again by the input signal. Thermal shutdown This product incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat generation all IGBT outputs shut down regardless of the input. This protection function has hysteresis (ΔTSD = 50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on/off again by the input. Because the chip contains just one temperature-detection location, when the chip heats up due to the IGBT, for example, the differences in distance between the detection location and the IGBT (the source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the initial thermal shutdown temperature. (2) (3) (A) 0.9 0.83 0 1.0 0.9 Peak winding current Peak winding current (A) Safe Operating Area 400 0 Power supply voltage Figure 1 VBB 0 450 (V) 400 0 Power supply voltage SOA at Tj = 135°C Figure 2 VBB 450 (V) SOA at Tc = 95°C Note 1: The above safe operating areas are at Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature exceeds these, the safe operation areas are reduced. Note 2: The above safe operating areas include the over-current protection operation area. 11 2006-11-01 TPD4113K VCEsatL – Tj 3.6 VCC = 15 V IGBT saturation voltage VCEsatL (V) IGBT saturation voltage VCEsatH (V) VCEsatH – Tj 3.6 IC = 700 mA 3.2 2.8 IC = 500 mA 2.4 IC = 300 mA 2.0 1.6 −20 20 60 Junction temperature 100 Tj VCC = 15 V 2.8 IC = 500 mA 2.4 IC = 300 mA 2.0 1.6 −20 140 IC = 700 mA 3.2 (°C) 20 60 Junction temperature 1.6 IF = 700 mA 1.4 IF = 500 mA IF = 300 mA 1.2 1.0 0.8 −20 20 60 Junction temperature 100 Tj 1.6 IF = 500 mA IF = 300 mA 1.2 1.0 (°C) 20 60 Junction temperature ICC – VCC (mA) 25°C Regulator voltage VREG (V) ICC Tj 140 (°C) −20°C 25°C 135°C −20°C Consumption current 100 VREG – VCC 8.0 135°C 1.5 1.0 0.5 14 (°C) IF = 700 mA 1.4 0.8 −20 140 2.0 0 12 Tj 140 VFL – Tj FRD forward voltage VFL (V) FRD forward voltage VFH (V) VFH – Tj 100 16 Control power supply voltage (V) Ireg = 30 mA 7.0 6.5 6.0 12 18 VCC 7.5 14 16 Control power supply voltage 12 18 VCC (V) 2006-11-01 TPD4113K tON – Tj tOFF – Tj 3.0 tOFF (μs) 2.0 1.0 Output-off delay time tON Output-on delay time VBB = 280 V VCC = 15 V IC = 0.5 A (μs) 3.0 VBB = 280 V VCC = 15 V IC = 0.5 A High-side Low-side 0 −20 20 60 Junction temperature 100 Tj High-side Low-side 2.0 1.0 0 −20 140 (°C) 20 Junction temperature VCCUV– Tj Tj 140 (°C) 10.5 VCCUVD Under-voltage protection operating voltage VBSUV (V) Under-voltage protection operating voltage VCCUV (V) 100 VBSUV – Tj 12.5 VCCUVR 12.0 11.5 11.0 10.5 10.0 −20 20 100 60 Junction temperature Tj VBSUVD VBSUVR 10.0 9.5 9.0 8.5 8.0 −20 140 (°C) 20 60 Junction temperature VR – Tj 100 Tj 140 (°C) Dｔ– Tj 6.0 VCC = 15 V Current limiting dead time Dt 0.8 0.6 0.4 0.2 0 −20 VCC = 15 V (μs) 1.0 Current control operating voltage VR (V) 60 20 60 Junction temperature 100 Tj 4.0 2.0 0 −20 140 (°C) 20 60 Junction temperature 13 100 Tj 140 (°C) 2006-11-01 TPD4113K IBS – VBS (ON) IBS – VBS (OFF) 500 IBS （OFF) −20°C 25°C 135°C 400 Current consumption ( A) Current consumption IBS (ON) (μA) 500 300 200 100 12 14 16 Control power supply Voltage 400 300 200 100 12 18 VBS −20°C 25°C 135°C (V) 14 16 Control power supply Voltage 18 VBS (V) Wton – Tj VF (BSD) – Tj (V) 250 (μJ) Wton 0.9 Turn-on loss BSD forward voltage VF（BSD） 1.0 IF = 700 μA 0.8 IF = 500 μA 0.7 200 150 IC = 700 mA IC = 500 mA 100 IC = 300 mA 50 IF = 300 μA 0.6 −20 20 60 Junction temperature 100 Tj 0 −20 140 20 60 Junction temperature (°C) 100 Tj 140 (°C) Wtoff – Tj Turn-off loss Wtoff (μJ) 50 40 IC = 700 mA 30 20 IC = 500 mA 10 0 −20 IC = 300 mA 20 60 Junction temperature 100 Tj 140 (°C) 14 2006-11-01 0.5A 15 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 0.5 A VM 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU TPD4113K Test Circuits IGBT Saturation Voltage (U-phase low side) HU = 0 V HV = 0 V HW = 0 V LU = 5 V LV = 0 V LW = 0 V VCC = 15 V FRD Forward Voltage (U-phase low side) VM 2006-11-01 16 30 mA 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU TPD4113K VCC Current Dissipation IM VCC = 15 V Regulator Voltage VM VCC = 15 V 2006-11-01 TPD4113K 560 Ω 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 2.2 μF 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU Output ON/OFF Delay Time (U-phase low side) HU = 0 V HV = 0 V HW = 0 V LU = PG LV = 0 V LW = 0 V VCC = 15 V U = 280 V IM 90% LU 10% 90% IM 10% tON tOFF 17 2006-11-01 TPD4113K 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 2 kΩ 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU VCC Under-voltage Protection Operation/Recovery Voltage (U-phase low side) HU = 0 V HV = 0 V HW = 0 V LU = 5 V LV = 0 V LW = 0 V VCC = 15 V → 6 V 6 V → 15 V U = 18 V VM *:Note:Sweeps the VCC pin voltage from 15 V and monitors the U pin voltage. The VCC pin voltage when output is off defines the under-voltage protection operating voltage. Also sweeps from 6 V to increase. The VCC pin voltage when output is on defines the under voltage protection recovery voltage. 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 2 kΩ VM 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU VBS Under-voltage Protection Operation/Recovery Voltage (U-phase high side) HU = 5 V HV = 0 V HW = 0 V LU = 0 V LV = 0 V LW = 0 V VCC = 15 V VBB = 18 V BSU = 15 V → 6 V 6 V → 15 V *:Note: Sweeps the BSU pin voltage from 15 V and monitors the VBB pin voltage. The BSU pin voltage when output is off defines the under-voltage protection operating voltage. Also sweeps the BSU pin voltage from 6 V and changes from the HU pin voltage at 0 V → 5 V → 0 V. The BSU pin voltage when output is on defines the under-voltage protection recovery voltage. 18 2006-11-01 TPD4113K 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU Current Control Operating Voltage (U-phase high side) HU = 5 V HV = 0 V HW = 0 V LU = 0 V LV = 0 V LW = 0 V VCC = 15 V IS/RS = 0 V → 0.6 V 15 V 2 kΩ VM VBB = 18 V *: Note:Sweeps the IS/ RS pin voltage and monitors the U pin voltage. The IS/ RS pin voltage when output is off defines the current control operating voltage. 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU VBS Current Consumption (U-phase high side) HU = 0 V/ 5 V HV = 0 V HW = 0 V LU = 0 V LV = 0 V LW = 0 V IM 19 VCC = 15 V BSU = 15 V 2006-11-01 TPD4113K VM L 23. VREG 22. GND 21. Vcc 20. DIAG 19. RS 18. IS2 17. NC 16. VBB2 15. W 14. BSW 13. V 12. BSV 11. VBB1 10. U 9. BSU 8. NC 2.2 μF 7. IS1 6. LW 5. LV 4. LU 3. HW 2. HV 1. HU Turn-On/Off Loss (low-side IGBT + high-side FRD) HU = 0 V HV = 0 V HW = 0 V LU= PG LV = 0 V LW = 0 V VCC = 15 V VBB/U = 280 V IM 5 mH Input (HU) IGBT (C-E voltage) (U-GND) Power supply current Wtoff Wton 20 2006-11-01 TPD4113K Package Dimensions Weight: 6.1 g (typ.) 21 2006-11-01 TPD4113K Package Dimensions Weight: 6.1 g (typ.) 22 2006-11-01 TPD4113K Package Dimensions Weight: 6.1 g (typ.) 23 2006-11-01 TPD4113K RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 24 2006-11-01