Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal • Point-to-Point Radio Chip Dimensions 4.290 mm x 3.019 mm Gain (dB) Bias Conditions: Vd = 6 V, Id = 2..1 A 19 18 17 16 15 14 13 12 11 10 28 28.5 29 29.5 30 30.5 31 Frequency (GHz) 35 Pout @ P1dB (dBm) 34.5 34 33.5 33 32.5 32 31.5 31 28 28.5 29 29.5 30 30.5 31 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advanced Product Information December 14, 2001 TGA4501-EPU TABLE I MAXIMUM RATINGS Symbol Parameter 5/ Value Notes 8V 4/ + Positive Supply Voltage - V Negative Supply Voltage Range I+ Positive Supply Current (Quiescent) 3.0 A | IG | Gate Supply Current 62 mA PIN Input Continuous Wave Power 24 dBm PD Power Dissipation 18.4 W V TCH TM TSTG Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature -5V TO 0V 0 150 C 4/ 3/ 4/ 1/ 2/ 0 320 C -65 to 150 0C 1/ These ratings apply to each individual FET. 2/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 7.4 E+6 to 4.6 E+5 hours. 4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 5/ These ratings represent the maximum operable values for this device. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advanced Product Information December 14, 2001 TGA4501-EPU TABLE II DC PROBE TEST (TA = 25 °C ± 5 °C) Symbol Parameter Minimum Maximum Unit Idss (Q35)* Saturated Drain Current 15 70.5 mA Gm(Q35)* Transconductance 33 79.5 mS VP Pinch-off Voltage -1.5 -0.5 V Breakdown Voltage GateSource Breakdown Voltage GateDrain -30 -11 V -30 -11 V BVGS(Q35)* BVGD(Q35)* * Q35 is a 150 um Test FET TABLE III AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS FET Parameters Test Conditions IDSS : Maximum drain current (IDS) with gate voltage (VGS) at zero volts. VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V up to a maximum of 3.5 V in search of the maximum value of IDS; voltage for IDSS is recorded as VDSP. For all material types, VDS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at VGS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. (I DSS Gm : Transconductance; ) − IDS 1 VG1 VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of gate width. VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to-drain breakdown current (IBD) = 1.0 mA/mm of gate width. VBVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (IBS) = 1.0 mA/mm of gate width. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (VGD) measured is VBVGD and recorded as BVGD; this cannot be measured if there are other DC connections between gatedrain, gate-source or drain-source. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-to-source voltage (VGS) measured is VBVGS and recorded as BVGS; this cannot be measured if there are other DC connections between gatedrain, gate-source or drain-source. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advanced Product Information December 14, 2001 TGA4501-EPU TABLE IV RF WAFER CHARACTERIZATION TEST (TA = 25°C + 5°C) (Vd = 6V, Id = 2.048A ±5%) Parameter Frequency Output P1dB Small Signal Gain Input Return Loss Output Return Loss Output TOI Unit GHz dBm dB dB dB dBm Min 28 33.5 16 Typical Max 31 34.5 18 -6 -6 40 TABLE V THERMAL INFORMATION* Parameter RθJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6V ID = 2.048 A Pdiss = 12.288 W TCH (oC) 127.65 RθJC (°°C/W) 4.69 TM (HRS) 7.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model analysis. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advanced Product Information December 14, 2001 TGA4501-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 19 18 17 Gain (dB) 16 15 14 13 12 11 10 28 28.5 29 29.5 30 30.5 31 Frequency (GHz) 35 34.5 Pout @ P1dB (dBm) 34 33.5 33 32.5 32 31.5 31 28 28.5 29 29.5 30 30.5 31 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advanced Product Information December 14, 2001 TGA4501-EPU Chip Assembly & Bonding Diagram Note: Please refer to page 8 for a magnified view of the chip assembly and bonding diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advanced Product Information December 14, 2001 TGA4501-EPU Chip Assembly and Bonding Diagram Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advanced Product Information December 14, 2001 TGA4501-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advanced Product Information December 14, 2001 TGA4501-EPU Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200ΓC. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9