S T U/D25N03L S amHop Microelectronics C orp. J uly 11 , 2005 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 21 @ V G S = 10V 30V TO251 and TO 252 P ackage. 25A 32 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 30 V Gate-S ource Voltage V GS 20 V P arameter Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed ID 25 A IDM 75 A Drain-S ource Diode Forward C urrent a IS 20 A Maximum P ower Dissipation a PD 50 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient a R JA 50 C /W THE R MAL C HAR AC TE R IS TIC S 1 S T U/D25N03L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.7 3 V GS =10V, ID =10A 17 21 m ohm V GS =4.5V, ID= 6A 25 32 V DS = 10V, V GS = 10V 1 20 V m ohm A 16 S 940 PF 148 PF 85 PF 13 ns 10 ns 30 ns 6 ns V DS =15V, ID =10A,V GS =10V 15.9 nC V DS =15V, ID =10A,V GS =4.5V 7.4 nC V DS =15V, ID =10A V GS =10V 2.0 nC 4.1 nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c V DD = 15V R L=15 ohm ID = 1A V GS = 10V R GE N = 6 ohm tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 2 S T U/D25N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 1 V GS = 0V, Is = 20A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 20 20 V G S =10,~4.5V 25 C V G S =4V V G S =3.5V 12 8 V G S =3V 4 0 0 15 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 10 5 T j=125 C 0 0.5 1 1.5 2 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 4 3 5 6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1200 1.6 R DS (ON) , On-R es is tance Normalized C is s 1000 C , C apacitance (pF ) 2 1 -55 C 800 600 400 C os s 200 1.4 V G S =10V I D =10A 1.2 1.0 0.8 0.6 C rs s 0 0 5 10 15 20 25 0.4 -55 30 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 100 125 150 75 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 24 Is , S ource-drain current (A) 20 16 12 8 4 10.0 1.0 0 0 5 10 15 0.4 20 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 80 10 V DS =15V I D =10A 4 2 0 0 2 4 6 8 10 12 Qg, T otal G ate C harge (nC ) it L im N) (O 1s 10 1 0.5 0.1 14 16 10 S 6 1m RD 8 60 I D , Drain C urrent (A) gF S , T rans conductance (S ) V DS =10V V G S , G ate to S ource V oltage (V ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D25N03L s 10 m 0m s s DC V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D25N03L V DD ton RL V IN D td(off) V OUT V OUT 10% 5 tf 90% 90% VG S R GE N toff tr td(on) INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 10 100 S T U/D25N03L 6 S T U/D25N03L 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 7 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D25N03L TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 8 K S 10.6 2.0 ±0.5 G R V