S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 17 @ V G S = -4.5V -20V 6.2A S urface Mount P ackage. 25 @ V G S = -2.5V D2 S2 S2 G2 8 7 6 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS -20 V Gate-S ource Voltage V GS 12 V P arameter Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed ID -6.2 A IDM -25 A Drain-S ource Diode Forward C urrent a IS -1.7 A Maximum P ower Dissipation a PD 1.5 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 85 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T G 2507 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = -16V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 12V,V DS = 0V 100 nA Gate Threshold Voltage V GS (th) Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current Forward Transconductance ID(ON) gFS V DS = V GS , ID = 250uA V GS = -4.5V,ID = - 6 A V GS =-2.5V,ID =- 4 A V DS =-5V,V GS =-4.5V V DS = -5V, ID = -6 A OFF CHAR ACTE R IS TICS -20 V uA ON CHAR ACTE R IS TICS b DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time -20 -0.8 -1.5 15 17 20 25 V m ohm m ohm 22 S 1782 PF 488 PF 77 PF 6.1 ns 14.8 ns 59 ns 29.7 ns 30.3 nC 4.5 nC 6.5 nC c Input Capacitance Turn-On Delay Time -0.5 V DS =-10V, V GS = 0V f =1.0MH Z CRSS c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = -10V, ID = 1A, V GE N = -4.5V, R L = 10 ohm R GE N = 6 ohm V DS =-10V, ID = 6A, V GS =-4.5V 2 S T G 2507 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ Max Unit V GS = 0V, Is =1.7A -0.76 -1.2 DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage VSD Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 25 C V G S =-2V I D , Drain C urrent (A) ID , Drain C urrent(A) V G S =-4.5,-4,-3.5,V 12 8 V G S =-1.5V 4 V G S =-1V 0 -55 C 12 16 0 2 4 6 8 9 6 3 0 0.0 12 10 T j=125 C 0.4 V DS , Drain-to-S ource Voltage (V ) 2.2 1.8 RDS(ON), On-Resistance (Normalized) C is s 1200 800 C os s 400 1.2 1.6 2.0 2.4 F igure 2. Trans fer C haracteris tics 2000 1600 0.8 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 5 C Condition S ymbol V G S =-4.5V I D =6A 1.4 1.0 0.6 0.2 C rs s 0 0 4 8 12 16 20 0 24 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V 1.3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T G 2507 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20 10 Is , S ource-drain current (A) 30 24 18 12 6 V DS =5V 0 0 3 6 12 9 1 T J =25 C 0 0.4 15 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 V DS =-10V I D =6A 4 I D , Drain C urrent (A) gF S , T rans conductance (S ) I D =250uA 1.10 T j, J unction T emperature ( C ) 36 V G S , G ate to S ource V oltage (V ) 1.15 3 2 1 0 4 8 12 16 20 24 28 32 ) Li m it 1s 11 0.1 10 0m ms s DC V G S =4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) (O N 10 0.03 0 R 10 DS 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T G 2507 -VDD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 S T G 2507 6 S T G 2507 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : ㎜ PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 D0 D1 E E1 E2 P0 P1 P2 T 1.60 ψ1.50 + 0.1 - 0.0 ψ1.50 + 0.1 - 0.0 12.00 ± 0.3 1.75 5.50 ± 0.05 8.00 4.00 2.00 ±0.05 0.30 ±0.05 M N W W1 H K S G 16.0 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 TSSOP-8 Reel UNIT : ㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 330 100 12.5 7 R V