UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 48nC) • Low Crss ( Typ. 30pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G DS TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP26N40 FDPF26N40 400 Units V ±30 V -Continuous (TC = 25oC) 26 26* -Continuous (TC = 100oC) 15.6 15.6* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 26 A EAR Repetitive Avalanche Energy (Note 1) 26.5 mJ dv/dt Peak Diode Recovery dv/dt 104* (Note 2) A 1352 (Note 3) mJ 4.5 V/ns (TC = 25oC) 265 40 W - Derate above 25oC 2.0 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 104 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP26N40 FDPF26N40 RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.5 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2008 Fairchild Semiconductor Corporation FDP26N40 / FDPF26N40 Rev. A 1 Units o C/W www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET February 2008 Device Marking FDP26N40 Device FDP26N40 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF26N40 FDPF26N40 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V ID = 250µA, Referenced to 25oC - 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V - - 1 VDS = 320V, TC = 125oC - - 10 µA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.13 0.16 Ω - 25.5 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 13A gFS Forward Transconductance VDS = 20V, ID = 13A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V, ID = 26A VGS = 10V (Note 4, 5) - 2400 3185 pF - 390 520 pF - 30 45 pF - 48 60 nC - 15 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200V, ID = 26A RG = 25Ω (Note 4, 5) - 45 100 ns - 100 210 ns - 115 240 ns - 66 140 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 26 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 26A - - 1.4 V trr Reverse Recovery Time - 406 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 26A dIF/dt = 100A/µs - 5.17 - µC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, IAS = 26A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 26A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP26N40 / FDPF26N40 Rev. A 2 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 70 1 o o -55 C 150 C 10 o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 0.1 0.02 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 9 100 0.30 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 6 7 8 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.35 0.25 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250µs Pulse Test *Note: TJ = 25 C 0.10 0 20 40 60 ID, Drain Current [A] 1 0.2 80 Figure 5. Capacitance Characteristics 1.4 Figure 6. Gate Charge Characteristics Ciss 3000 2000 *Note: 1. VGS = 0V 2. f = 1MHz Coss 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4000 0 0.1 0.6 1.0 VSD, Body Diode Forward Voltage [V] 10 5000 Capacitances [pF] 5 VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 Crss *Note: ID = 26A 0 1 10 VDS, Drain-Source Voltage [V] FDP26N40 / FDPF26N40 Rev. A 0 30 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 13A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area - FDP26N40 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Safe Operating Area 300 28 10µs 100 24 100µs 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 2.5 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 20 16 12 8 o 1. TC = 25 C 4 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP26N40 Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 t2 0.01 0.02 0.01 *Notes: o 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.002 -5 10 FDP26N40 / FDPF26N40 Rev. A -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP26N40 / FDPF26N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP26N40 / FDPF26N40 Rev. A 5 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP26N40 / FDPF26N40 Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP26N40 / FDPF26N40 Rev. A 7 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Mechanical Dimensions FDP26N40 / FDPF26N40 N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) 15.87 ±0.20 (1.00x45°) MAX1.47 0.80 ±0.10 ) 0° (3 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP26N40 / FDPF26N40 Rev. A 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com