PD -90813A IRGMIC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features • • • • • VCES = 600V Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses VCE(on) max = 3.0V G @VGE = 15V, IC = 27A E n-ch an nel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-259AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 45* 27 220 180 ±20 200 80 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 10.5 (typical) g *Current is limited by pin diameter Thermal Resistance Parameter Min Typ Max Units RthJC RthJC Junction-to-Case-IGBT Junction-to-Case-Diode — — — — 0.625 1.0 RthCS RthJA Case-to-Sink Junction-to-Ambient — — 0.21 — — 30 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/20/02 IRGMIC50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.6 ––– V/°C VGE = 0V, IC = 1.0 mA ––– ––– 3.0 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– 3.25 I = 45A See Fig. 5 C V ––– ––– 2.85 IC = 27A , TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250 µA gfe Forward Transconductance ➂ 16 ––– ––– S VCE = 100V, IC = 27A ––– ––– 250 VGE = 0V, VCE = 480V µA ICES Zero Gate Voltage Collector Current ––– ––– 5000 VGE = 0V, VCE = 480V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20 VFM Diode Forward Voltage Drop ––– ––– 1.7 IC = 27A V ––– ––– 1.5 IC = 27A , TJ = 125°C V(BR)CES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Cies Coes Cres T rr Q rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Peak Reverse Recovery Time Diode Peak Reverse Recovery Charge ––– 2900 ––– 330 ––– 41 ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– 0.12 1.6 1.7 24 27 180 130 2.7 6.8 ––– Max. Units Conditions 140 IC = 27A 35 nC VCC = 300V See Fig. 8 70 VGE = 15V 50 IC = 27A, VCC = 480V 75 VGE = 15V, RG = 2.35Ω ns 300 Energy losses include "tail" 210 See Fig. 9, 10, 13 ––– mJ ––– 2.8 ––– TJ = 125°C ––– C = 27A, VCC = 480V ns ––– VGE = 15V, RG = 2.35Ω ––– Energy losses include "tail" mJ See Fig. 11, 13 ––– ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz ns 100 di/dt = 200A/µS, IF = 27A VR ≤ 200V 375 nC di/dt = 200A/µS, IF = 27A TJ = 125°C, VR ≤ 200V Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com