IRF RGBC40M

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Preliminary Data Sheet PD - 9.1074
IRGBC40M
Short Circuit Rated
Fast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz)
VCES = 600V
VCE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 24A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
40
24
80
80
10
±20
15
160
65
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-313
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.50
—
2 (0.07)
0.77
—
80
—
Units
°C/W
g (oz)
Revision 1
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IRGBC40M
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, IC = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.70 — V/°C VGE = 0V, IC = 1.0mA
—
2.0 3.0
IC = 24A
VGE = 15V
—
2.6
—
V
IC = 40A
—
2.4
—
IC = 24A, T J = 150°C
Gate Threshold Voltage
3.0
—
5.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage —
-12
— mV/°C VCE = VGE, IC = 250µA
9.2
12
—
S
VCE = 100V, IC = 24A
Forward Transconductance
Zero Gate Voltage Collector Current
—
— 250
µA
VGE = 0V, VCE = 600V
—
— 1000
VGE = 0V, VCE = 600V, T J = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
59
80
IC = 24A
8.6
10
nC VCC = 400V
25
42
VGE = 15V
26
—
TJ = 25°C
37
—
ns
IC = 24A, VCC = 480V
240 410
VGE = 15V, RG = 10Ω
230 420
Energy losses include "tail"
0.75 —
1.65 —
mJ
2.4 3.6
—
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
28
—
TJ = 150°C,
37
—
ns
IC = 24A, VCC = 480V
380
—
VGE = 15V, RG = 10Ω
460
—
Energy losses include "tail"
4.5
—
mJ
7.5
—
nH Measured 5mm from package
1500 —
VGE = 0V
190
—
pF
VCC = 30V
20
—
ƒ = 1.0MHz
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Package Outline 1 - JEDEC Outline TO-220AB
C-314
To Order
Pulse width 5.0µs,
single shot.
Section D - page D-12