PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses VCES = 600V VCE(on) max = 2.1V G @VGE = 15V, IC = 12A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 23 12 92 92 ± 20 75 30 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 1.67 0.21 — — 48 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/20/02 IRGMC30F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage ➂ 24 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– 2.4 ––– 2.2 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 gfe Forward Transconductance T 6.1 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 1.0 mA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 2.1 IC = 12A ––– IC = 23A See Fig.5 V ––– IC = 12A , TJ = 125°C 5.5 VCE = VGE, IC = 250 µA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 12A 50 VGE = 0V, VCE = 480V µA 1000 VGE = 0V, VCE = 480V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– Typ. 27 4 12 ––– ––– ––– ––– 0.4 2.1 2.5 25 21 290 590 4.0 6.8 Max. Units Conditions 54 IC = 12A 8 nC VCC = 300V See Fig. 8 24 VGE = 15V 50 IC = 12A, VCC = 480V 42 Energy losses include "tail" ns 320 See Fig. 9, 10, 13 500 ––– mJ ––– 3.5 ––– TJ = 125°C ––– IC = 12A, VCC = 480V ns ––– VGE = 15V, RG = 7.5Ω ––– Energy losses include "tail" ––– mJ See Fig. 11, 13 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) 670 ––– VGE = 0V 100 ––– pF VCC = 30V See Fig. 7 10 ––– ƒ = 1.0MHz Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGMC30F Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRGMC30F Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGMC30F Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGMC30F 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 www.irf.com IRGMC30F L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 12a - Clamped Inductive Fig. 12b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 13a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 13b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRGMC30F Notes: Q Repetitive rating; VGE = 20V, pulse width limited by S Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. T Pulse width 5.0µs, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 13.84 [.545] 13.59 [.535] B C 2 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 3 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] 2X 3.81 [.150] 2X 0.36 [.014] B A B A NOTE S : 1. 2. 3. 4. DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHE S ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUTLINE T O-254AA. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com