IRF IRGMC30F

PD -90714B
IRGMC30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
C
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
VCES = 600V
VCE(on) max = 2.1V
G
@VGE = 15V, IC = 12A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
600
23
12
92
92
± 20
75
30
-55 to + 150
V
A
V
W
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Thermal Resistance
Parameter
R thJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 1.67
0.21 —
—
48
Test Conditions
°C/W
For footnotes refer to the last page
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1
02/20/02
IRGMC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 –––
Emitter-to-Collector Breakdown Voltage ➂ 24 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69
––– –––
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– 2.4
––– 2.2
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11
gfe
Forward Transconductance T
6.1 –––
–––
–––
ICES
Zero Gate Voltage Collector Current
––– –––
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
V(BR)ECS
Max. Units
Conditions
–––
V
VGE = 0V, IC = 1.0 mA
–––
V
VGE = 0V, IC = 1.0 A
––– V/°C VGE = 0V, IC = 1.0 mA
VGE = 15V
2.1
IC = 12A
–––
IC = 23A
See Fig.5
V
–––
IC = 12A , TJ = 125°C
5.5
VCE = VGE, IC = 250 µA
––– mV/°C VCE = VGE, IC = 250 µA
–––
S
VCE ≥ 15V, IC = 12A
50
VGE = 0V, VCE = 480V
µA
1000
VGE = 0V, VCE = 480V, TJ = 125°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LC+LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
Typ.
27
4
12
–––
–––
–––
–––
0.4
2.1
2.5
25
21
290
590
4.0
6.8
Max. Units
Conditions
54
IC = 12A
8
nC VCC = 300V
See Fig. 8
24
VGE = 15V
50
IC = 12A, VCC = 480V
42
Energy losses include "tail"
ns
320
See Fig. 9, 10, 13
500
–––
mJ
–––
3.5
–––
TJ = 125°C
–––
IC = 12A, VCC = 480V
ns
–––
VGE = 15V, RG = 7.5Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 11, 13
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
670 –––
VGE = 0V
100 –––
pF
VCC = 30V
See Fig. 7
10 –––
ƒ = 1.0MHz
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
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IRGMC30F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRGMC30F
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGMC30F
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRGMC30F
125°C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
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IRGMC30F
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 12a - Clamped Inductive
Fig. 12b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 13a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 13b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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IRGMC30F
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature.
T Pulse width 5.0µs, single shot.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
B
C
2
1.27 [.050]
1.02 [.040]
A
22.73 [.895]
21.21 [.835]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
1
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
2
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
3
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
3.81 [.150]
3X
3.81 [.150]
1.14 [.045]
0.89 [.035]
0.36 [.014]
2X
3.81 [.150]
2X
0.36 [.014]
B
A
B A
NOTE S :
1.
2.
3.
4.
DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHE S ].
CONT ROLLING DIMENS ION: INCH.
CONF ORMS T O JEDEC OUTLINE T O-254AA.
LEGEND
1 = COLLECTOR
2 = EMITTER
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
8
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