GTM GSMBT2222A

CORPORATION
G SM BT 2 2 2 2 A
ISSUED DATE :2005/01/12
REVISED DATE :
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
Description
The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
High frequency current gain
High speed switching
For complementary use with PNP type GSMBT2907A
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Symbol
Ratings
Tj
+150
Unit
Storage Temperature
Collector to Base Voltage at Ta=25
Tstg
-55 ~ +150
VCBO
75
V
Collector to Emitter Voltage at Ta=25
VCEO
40
V
Emitter to Base Voltage at Ta=25
VEBO
6
V
Collector Current at Ta=25
IC
600
mA
Total Power Dissipation at Ta=25
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
75
-
-
V
IC=100uA , IE=0
BVCEO
40
-
-
V
IC=10mA,IB=0
BVEBO
6
-
-
V
IE=10uA ,IC=0
ICBO
-
-
10
nA
VCB=60V, IE=0
ICEX
-
-
10
nA
VCE=60V ,VEB(OFF)=3V
IEBO
-
-
10
nA
VEB=3V
*VCE(sat)1
-
-
500
mV
IC=380mA, IB=10mA
*VCE(sat)2
-
-
1.0
V
IC=500mA, IB=50mA
*VBE(sat)1
-
-
1.2
V
IC=150mA, IB=15mA
*VBE(sat)2
-
-
2.0
V
IC=500mA, IB=50mA
*hFE1
35
-
-
VCE=10V, IC=100uA
*hFE2
50
-
-
VCE=10V, IC=1mA
*hFE3
75
-
-
VCE=10V, IC=10mA
*hFE4
100
-
300
VCE=10V, IC=150mA
*hFE5
40
-
-
fT
300
-
-
VCE=10V, IC=500mA
MHz
VCB=20V, IC=20mA, f=100MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
1/2
CORPORATION
ISSUED DATE :2005/01/12
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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