ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5089 NP N EP ITAXI AL P L ANAR T RANS ISTO R Description The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 30 25 4.5 400 450 400 50 - Typ. - Ratings +150 -55~+150 30 25 4.5 50 225 Unit V V V mA mW ) Max. 50 100 500 800 1200 4.0 Unit V V V nA nA mV mV MHz pF Test Conditions IC=100uA , IE=0 IC=1mA, IB=0 IE=10uA ,IC=0 VCB=15V, IE=0 VEB=4.5V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=0.5mA, f=20MHz VCB=5V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2