CORPORATION GL6718 ISSUED DATE :2004/12/17 REVISED DATE : N P N EP I TAXI AL P L AN AR T R AN S I ST O R Description The GL6718 is designed for general purpose medium power amplifier and switching. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Symbol Ratings Tj +150 Unit Storage Temperature Collector to Base Voltage at Ta=25 Tstg -55 ~ +150 VCBO 100 V Collector to Emitter Voltage at Ta=25 VCEO 100 V Emitter to Base Voltage at Ta=25 VEBO 5.0 V Collector Current at Ta=25 IC 1.0 A Total Power Dissipation at Ta=25 PD 1.5 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 100 - - V IC=100uA BVCEO 100 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCB=80V mV IC=350Ma, IB=35A *VCE(sat) Test Conditions - - 350 *hFE1 80 - - VCE=1V, IC=50mA *hFE2 100 - 310 VCE=1V, IC=250mA *hFE2 20 - - fT 50 - - MHz - - 20 pF Cob VCE=1V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 1/2 2% CORPORATION ISSUED DATE :2004/12/17 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2