OPTEK OP602TX

Product Bulletin OP602TX/V
September 1996
Hi-Reliability NPN Silicon Phototransistors
Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S
Features
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
• Processed to Optek’s military
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V
o (1)
Soldering Temperature (for 5 seconds with soldering iron) . . . . . . . . . . . . . 240 C
(2)
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mW
screening program patterned after
MIL-PRF-19500
• Miniature hermetically sealed package
• Wide range of collector currents
• Ideal for direct mounting in PC boards
Description
Each device in this series consists of a
high reliability NPN silicon
phototransistor mounted in a miniature
glass lensed, hermetically sealed, “Pill”
package.
o
o
Notes:
(1) No-clean or low solids, RMA flux is recommended. Duration can be extended to 10 sec. max.
when wave soldering.
(2) Derate linearly 0.5 mW/o C above 25o C.
(3) Junction temperature maintained at 25o C.
(4) Light source is an unfiltered tungsten lamp operating at CT = 2870 K or equivalent source.
After electrical testing by manufacturing,
all devices are processed to Optek’s
100% screening program patterned after
MIL-PRF-19500. Typical screening and
lot acceptance tests are provided on
page 13-4.
This device type is lensed and has an
acceptance half angle of 18o measured
from the optical axis to the half power
point. The series is also mechanically
and spectrally matched to the OP223
and OP224 high reliability series of
infrared emitting diodes.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
13-30
(972) 323-2200
Fax (972) 323-2396
Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S
Electrical Characteristics (TA = 25o C unless otherwise noted)
Symbol
IC(on)
ICEO
Parameter
On-State Collector Current
OP602TX,TXV
OP603TX,TXV
OP604TX,TXV, S
Min Typ Max
2.0
4.0
7.0
Collector Dark Current
Units
Test Conditions
5.0
8.0
mA
mA
mA
VCE = 5.0 V, Ee = 20 mW/cm2(3)(4)
VCE = 5.0 V, Ee = 20 mW/cm2(3)(4)
VCE = 5.0 V, Ee = 20 mW/cm2(3)(4)
25
100
nA
µA
VCE = 10.0 V, Ee = 0
VCE = 30.0 V, Ee = 0, TA = 100o C
V(BR)CEO
Collector-Emitter Breakdown Voltage
50
V
IC = 100 µA, Ee = 0
V(BR)ECO
Emitter-Collector Breakdown Voltage
7.0
V
IE = 100 µA, Ee = 0
VCE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
IC = 0.4 mA, Ee = 20 mW/cm2(3)(4)
tr
Rise Time
20.0
µs
tf
Fall Time
20.0
µs
VCC = 30 V, IC = 1.00 mA,
RL = 100 Ω
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
13-31