TLP665J(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP665J(S) 単位: mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVERSOLID STATE RELAY TOSHIBA TLP665J(S) consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. · Peak Off-State Voltage : 600V(Min) · Trigger LED Current : 10mA(Max) · On-State Current : 100mA(Max) · Isolation Voltage : 5000Vrms(Min) · UL Recognized : UL1577,File No.E67349 · SEMKO Approved : SS EN60065, File No.9841102 SS EN60950, File No.9841102 · BSI Approved JEDEC TOSHIBA 11-7A9 Weight: 0.39 g : BS EN60065, File No.8385 BS EN60950, File No.8386 · Option(D4)type VDE Approved : DIN VDE0884 Certificate No.101399 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage :8000 VPK (Note)When a VDE0884 approved type is needed, please designate the “Option(D4)” Option(D4)” •Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness 7.62 mm pich standard type 10.16 mm pich TLPXXXF type 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) PIN CONFIGURATION (TOP VIEW) 1 6 2 3 1 4 1: ANODE 2: CATHODE 3: N.C. 4:TERMINAL1 6:TERMINAL2 2002-05-24 TLP665J(S) MAXIMUM RATINGS(Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT IF 50 mA ∆IF /°C −0.7 mA /°C IFP 1 A LED Forward Current Forward Current Derating (Ta≥53°C) Peak Forward Current (100µs pulse, 100pps) Reverse Voltage Off-State Output Terminal Voltage Ta=25°C DETECTOR On-State RMS Current VR 5 V VDRM 600 V 100 IT(RMS) mA 50 Ta=70°C On-State Current Derating (Ta≥25°C) ∆IT/°C -1.1 mA /°C Peak On-State Current (100µs pulse, 120pps) ITP 2 A Peak Nonrepetitive Surge Current ITSM 1.2 A Junction Temperature Tj 115 °C Operating Temperature Range Topr −40~100 °C Storage Temperature Range Tstg −55~125 °C Lead Soldering Temperature (10s) Tsol 260 °C BVS 5000 Vrms (Pw=10ms,DC=10%) Isolation Voltage (AC,1min. , R.H.≤60%) (Note 2) (Note 2)Pins1,2 and 3 shorted together and pin4 and pin6 shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VAC — — 240 Vac Forward Current IF 15 20 25 mA Peak On-State Current ITP — — 1 A Operating Temperature Topr −25 — 85 °C 2 2002-05-24 TLP665J(S) ELECTRICAL CHARACTERISTICS(Ta=25°C) CHARACTERISTIC LED Forward Voltage VF Reverse Current IR Capacitance D E T E C T O R SYMBOL CT TEST CONDITION MIN. TYP. MAX. UNIT IF = 10 mA 1.0 1.15 1.3 V VR = 5 V — — 10 µA V = 0, f=1MHz — 30 — pF Peak Off-State Current IDRM VDRM=600V — 10 1000 nA Peak On-State Voltage VTM ITM=100mA — 1.7 3.0 V — 1.0 — mA — 500 — V/µs 0.2 — V/µs MIN. TYP. MAX. UNIT 5 10 mA 0.8 — pF 10 — 9 5000 — — AC , 1second,in oil — 10000 — DC , 1minute,in oil — 10000 — Holding Current IH Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Commutating Voltage — dv/dt Vin=240Vrms , Ta=85°C (Note3) dv/dt(c) Vin=60Vrms , IT=15mA (Note3) — COUPLED ELECTRICAL CHARACTERISTICS(Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Trigger LED Current IFT VT=6V — Capacitance (Input to Output) CS VS=0 , f=1MHz — Isolation Resistance RS VS=500V AC , 1minute Isolation Voltage BVS 12 1×10 14 Vrms Vdc (Note 3)dv/dt TEST CIRCUIT Rin + Vcc 1 6 Vin 1209 +5V , VCC 2 — 3 4 RL 0V 4k9 dv/dt(c) 3 dv/dt 2002-05-24 TLP665J(S) 4 2002-05-24 TLP665J(S) 5 2002-05-24 TLP665J(S) RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-05-24