2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4540 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −1 A Base current IB −0.2 A PC 500 Collector power dissipation PC (Note 1) Junction temperature Storage temperature range 1000 PW-MINI JEDEC mW Tj 150 °C Tstg −55 to 150 °C ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1735 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ― ― −0.1 μA V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = −2 V, IC = −100 mA 120 ― 400 hFE (2) VCE = −2 V, IC = −700 mA 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −25 mA ― ― −0.5 V Base-emitter saturation voltage VBE (sat) IC = −500 mA, IB = −25 mA ― ― −1.2 V fT VCE = −2 V, IC = −100 mA ― 100 ― MHz Cob VCB = −10 V, IE = 0, f = 1 MHz ― 16 ― pF ton IB2 ― 0.1 ― ― 0.25 ― ― 0.1 ― Transition frequency Collector output capacitance Turn-on time Storage time Switching time tstg INPUT I B1 IB1 20 μs Fall time tf IB2 −IB1 = IB2 = 25 mA, DUTY CYCLE ≤ 1% OUTPUT 50 Ω DC current gain μs VCC = −25 V Marking Part No. (or abbreviation code) L Lot No. C A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1735 hFE – IC IC – VCE −1.2 −10 −8 1000 −6 Common emitter Ta = 100°C −1.0 300 −4 DC current gain hFE Collector current IC (A) Ta = 25°C −3 −0.8 −2 −0.4 IB = −1 mA −0.2 100 25 −25 30 10 3 Common emitter VCE = −2 V 0 0 0 −4 −8 −12 Collector-emitter voltage −16 1 −1 −20 −3 −10 −30 IC – VBE (mA) PC – Ta PC (W) VCE = −2 V (A) −1.0 −0.8 Ta = 100°C Collector power dissipation Collector current IC −1000 −3000 1.2 Common emitter 25 −25 −0.4 −0.2 0 0 −300 Collector current IC VCE (V) −1.2 −0.6 −100 −0.4 −0.8 −1.2 Base-emitter voltage −1.6 VBE (V) (250 mm2 × 0.8 t) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 −2.0 (1) Mounted on a ceramic substrate (1) 1.0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2006-11-09 2SA1735 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09