LTC4555 SIM Power Supply and Level Translator FEATURES DESCRIPTION n The LTC®4555 provides power conversion and signal level shifting needed for low voltage 2.5G and 3G cellular telephones to interface with 1.8V or 3V subscriber identity modules (SIMs). The part meets all type approval requirements for 1.8V and 3V SIMs and smart cards. The part contains an LDO linear regulator to supply SIM power at either 1.8V or 3V from a 3V to 6V input. The output voltage is selected with a single pin and up to 50mA of load current can be supplied. n n n n n n n n SIM Power Supply: 1.8V/3V at 50mA Input Voltage Range: 3V to 6V Controller Voltage Range: 1.2V to 4.4V 14kV ESD On All SIM Contact Pins Meets All ETSI, IMT-2000 and ISO7816 SIM/Smart Card Interface Requirements Level Translators to 1.8V or 3V 20μA Operating Current Logic-Controlled Shutdown (ISD < 1μA) Available in a Low Profile, 16-Pin (3mm × 3mm) QFN Package Internal level translators allow controllers operating with supplies as low as 1.2V to interface with 1.8V or 3V smart cards. Battery life is maximized by 20μA operating current and <1μA shutdown current. Board area is minimized by the 3mm × 3mm leadless QFN package. APPLICATIONS n n SIM Interface in 3G Cellular Telephones Smart Card Readers L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION Typical SIM Interface (1.2V TO 4.4V) VBAT (3V TO 6V) VCC 0.1μF 0.1μF DVCC VBAT SHDN CONTROLLER SIM/ SMART CARD INTERFACE VCC VSEL VCC 1μF LTC4555 RIN RST RST CIN CLK CLK I/0 I/0 DATA GND GND 4555 TA01 4555fb 1 LTC4555 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Note 1) VBAT, DVCC, VCC to GND ............................ –0.3V to 6.5V Digital Inputs to GND ................................ –0.3V to 6.5V CLK, RST, I/O to GND .......................–0.3V to VCC + 0.3V VCC Short-Circuit Duration ................................... Infinite Operating Temperature Range (Note 2).... –40°C to 85°C Junction Temperature ........................................... 125°C Storage Temperature Range................... –65°C to 125°C CIN RIN DATA NC TOP VIEW 16 15 14 13 SHDN 1 12 NC VSEL 2 11 CLK 17 DVCC 3 10 GND NC 4 RST 6 7 8 VBAT NC VCC I/O 9 5 UD PACKAGE 16-LEAD (3mm s 3mm) PLASTIC QFN TJMAX = 125°C, θJA = 68°C/W, θJC = 4.2°C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4555EUD#PBF LTC4555EUD#TRPBF LAAA 16-Lead (3mm × 3mm) Plastic QFN –40°C to 85°C Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN l VBAT Operating Voltage VBAT Operating Current ICC = 0mA l VBAT Shutdown Current SHDN = 0V, VBAT = 4.5V l DVCC Operating Voltage l DVCC Operating Current fCLK = 1MHz l DVCC Shutdown Current SHDN = 0V l l DVCC Undervoltage Lockout TYP 3 MAX 6 20 1.2 5 V 30 μA 1 μA 4.4 V 10 μA 1 μA 1.1 V 2.8 1.7 2.8 3.0 1.8 3.2 1.9 V V V VCC Shorted to GND 60 110 175 mA Input Voltage Range SHDN, VSEL, RIN, CIN, DATA 0 DVCC V Input Current (IIH/IIL) SHDN, VSEL, RIN, CIN l –100 100 nA 0.7 × DVCC V VCC Output Voltage VCC Short-Circuit Current VSEL = DVCC, VBAT = 3V, IVCC = 50mA VSEL = DVCC, VBAT = 3.3V to 6V, IVCC = 0mA to 50mA VSEL = 0, VBAT = 2.6V to 6V, IVCC = 0mA to 50mA l l 0.5 UNITS Controller Inputs/Outputs High Input Threshold Voltage (VIH) RIN, CIN l Low Input Threshold Voltage (VIL) RIN, CIN l High Input Threshold Voltage (VIH) SHDN, VSEL l Low Input Threshold Voltage (VIL) SHDN, VSEL l 0.2 × DVCC V 1 0.4 V V 4555fb 2 LTC4555 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS High Level Input Current (IIH) DATA l MIN Low Level Input Current (IIL) DATA l High Level Output Voltage (VOH) DATA IOH = 20μA, I/O = VCC l Low Level Output Voltage (VOL) DATA IOL = –200μA, I/O = 0V l DATA Pull-Up Resistance Between DATA and DVCC TYP –20 MAX UNITS 20 μA 1 mA 0.7 × DVCC 13 V 20 0.4 V 30 kΩ SIM Inputs/Outputs (VCC = 3V) High Level Output Voltage (VOH) I/O, IOH = 20μA, DATA = DVCC l Low Level Output Voltage (VOL) I/O, IOL = –1mA, DATA = 0V l High Level Output Voltage (VOH) RST, CLK, IOH = 20μA l Low Level Output Voltage (VOL) RST, CLK, IOL = –200μA l I/O Pull-Up Resistance Between I/O and VCC 0.8 × VCC V 0.4 0.9 × VCC 6.5 V V 10 0.4 V 14 kΩ SIM Inputs/Outputs (VCC = 1.8V) High Level Output Voltage (VOH) I/O, IOH = 20μA, DATA = DVCC l Low Level Output Voltage (VOL) I/O, IOL = –1mA, DATA = 0V l High Level Output Voltage (VOH) RST, CLK, IOH = 20μA l Low Level Output Voltage (VOL) RST, CLK, IOL = –200μA l I/O Pull-Up Resistance Between I/O and VCC 0.8 × VCC V 0.3 0.9 × VCC 0.2 × VCC 6.5 V V 10 V 14 kΩ 18 ns SIM Timing Parameters CLK Rise/Fall Time CCLK = 30pF, VCC = 1.8V/3V l RST, I/O Rise/Fall Time RST, I/O Loaded with 30pF, VCC = 1.8V/3V l Max CLK Frequency 1 5 μs MHz VCC Turn-On Time SHDN = 1, (Note 3) 0.5 ms VCC Discharge Time to 1V SHDN = 0, (Note 3) 0.5 ms Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC4555E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Specification is guaranteed by design and not 100% tested in production. 4555fb 3 LTC4555 TYPICAL PERFORMANCE CHARACTERISTICS VCC Short-Circuit Current IBAT vs VBAT 170 22 150 20 TA = –40°C TA = 25°C 110 TA = –40°C 16 90 14 70 12 50 –40 –20 TA = 85°C 18 130 IBAT (μA) SHORT-CIRCUIT CURRENT (mA) VCC = 3V 40 20 60 0 TEMPERATURE (°C) 80 100 4555 G01 10 2.5 TA = 25°C TA = 85°C VCC = 1.8V 3.0 3.5 4.0 4.5 VBAT (V) 5.0 5.5 6.0 4555 G02 PIN FUNCTIONS SHDN (Pin 1): Controller Driven Shutdown Pin. This pin should be high (DVCC) for normal operation and low to activate a low current shutdown mode. VSEL (Pin 2): VCC Voltage Select Pin. A low level selects VCC = 1.8V while driving this pin to DVCC selects VCC = 3V. DVCC (Pin 3): Supply Voltage for the Controller Side I/O Pins (CIN, RIN, DATA). When below 1.1V, the VCC supply is disabled. This pin should be bypassed with a 0.1μF ceramic capacitor close to the pin. NC (Pins 4, 6, 12, 16): No Connect. VBAT (Pin 5): VCC Supply Input. This pin can be between 3V and 6V for normal operation. VBAT quiescent current reduces to <1μA in shutdown. This pin should be bypassed with a 0.1μF ceramic capacitor close to the pin. VCC (Pin 7): SIM Card VCC Supply. A 1μF low ESR capacitor needs to be connected close to the VCC pin for stable operation. This pin is discharged to GND during shutdown. RST (Pin 9): Reset Output Pin for the SIM Card. GND (Pin 10): Ground for the SIM and Controller. Proper grounding and bypassing is required to meet 14kV ESD specifications. CLK (Pin 11): Clock Output Pin for the SIM Card. This pin is pulled to ground during shutdown. Fast rising and falling edges necessitate careful board layout for the CLK node. CIN (Pin 13): Clock Input from the Controller. RIN (Pin 14): Reset Input from the Controller. DATA (Pin 15): Controller Side Data I/O. This pin is used for bidirectional data transfer. The controller output must be an open-drain configuration. The open-drain output must be capable of sinking greater than 1mA. Exposed Pad (Pin 17): GND. Must be soldered to PCB. I/O (Pin 8): SIM-Side Data I/O. The SIM card output must be on an open-drain driver capable of sourcing >1mA. 4555fb 4 LTC4555 BLOCK DIAGRAM VBAT (3V TO 6V) PROCESSOR VCC 3 C3 0.1μF SHUTDOWN PIN 1 VSIM VOLTAGE SELECT 2 RESET FROM PROCESSOR 14 CLOCK FROM PROCESSOR 13 5 DVCC VCC SHDN CELL PHONE PROCESSOR INTERFACE 15 1.8V/3V AT 50mA 7 50mA LDO VSEL C1 1μF RIN RST CIN CLK 20k DATA TO/ FROM SIM C2 0.1μF VBAT 9 RESET 11 CLOCK 8 BIDIRECTIONAL I/O 10k DATA I/0 LTC4555 10 GND SIM/ SMART CARD INTERFACE 4555 BD 4555fb 5 LTC4555 APPLICATIONS INFORMATION The LTC4555 provides both regulated power and internal level translators to allow low voltage controllers to interface with 1.8V or 3V SIMs or smart cards. The part meets all ETSI, IMT-2000 and ISO7816 requirements for SIM and smart card interfaces. VCC Voltage Regulator provides level translators to allow controllers to communicate with the SIM. The CLK and RST lines to the SIM are level shifted from the controller supply (GND to DVCC) to the SIM supply (GND to VCC). The data input to the SIM requires an open-drain output on the controller. On-chip pull-up resistors are provided for both the DATA and I/O lines. The VCC voltage regulator is a 50mA low dropout (LDO) regulator with a digitally selected 1.8V or 3V output. Shutdown Modes The output voltage is selected via the VSEL pin. The output is internally current limited and is capable of surviving an indefinite short to GND. The LTC4555 enters a low current shutdown mode by pulling the SHDN pin low. The SHDN pin is an active low input that the controller can use to directly shut down the part. The VCC output should be bypassed with a 1μF capacitor. The LTC4555 can use either a low ESR ceramic capacitor or a tantalum electrolytic capacitor on the VCC pin, with no special ESR requirements. VBAT should be bypassed with a 0.1μF ceramic capacitor. Level Translators All SIMs and smart cards contain a clock input, a reset input and a bidirectional data input/output. The LTC4555 ESD Protection All pins that connect to the SIM/smart card will withstand 14kV of human body model ESD. In order to ensure proper ESD protection, careful board layout is required. The GND pin should be tied directly to a GND plane. The VCC capacitor should be located very close to the VCC pin and tied directly to the GND plane. 4555fb 6 LTC4555 PACKAGE DESCRIPTION UD Package 16-Lead Plastic QFN (3mm × 3mm) (Reference LTC DWG # 05-08-1691) 0.70 p0.05 3.50 p 0.05 1.45 p 0.05 2.10 p 0.05 (4 SIDES) PACKAGE OUTLINE 0.25 p0.05 0.50 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 3.00 p 0.10 (4 SIDES) BOTTOM VIEW—EXPOSED PAD PIN 1 NOTCH R = 0.20 TYP OR 0.25 s 45o CHAMFER R = 0.115 TYP 0.75 p 0.05 15 16 PIN 1 TOP MARK (NOTE 6) 0.40 p 0.10 1 1.45 p 0.10 (4-SIDES) 2 (UD16) QFN 0904 0.200 REF 0.00 – 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WEED-2) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.25 p 0.05 0.50 BSC 4555fb Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 7 LTC4555 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1514 50mA, 650kHz, Step-Up/Down Charge Pump with Low-Battery Comparator VIN = 2.7V to 10V, VOUT = 3V/5V, IQ = 60μA, ISD = 10μA, S8 Package LTC1515 50mA, 650kHz, Step-Up/Down Charge Pump with Power-On Reset VIN = 2.7V to 10V, VOUT = 3.3V or 5V, IQ = 60μA, ISD < 1μA, S8 Package LTC1555/LTC1556 650kHz,SIM Power Supply and Level Translator for 3V/5V SIM Cards VIN = 2.7V to 10V, VOUT = 3V/5V, IQ = 60μA, ISD < 1μA, SSOP-16, SSOP-20 Packages LTC1555L 1MHz, SIM Power Supply and Level Translator for 3V/5V SIM Cards VIN = 2.6V to 6.6V, VOUT = 3V/5V, IQ = 40μA, ISD < 1μA, SSOP-16 Package LTC1555L-1.8 1MHz, SIM Power Supply and Level Translator for 1.8V/3V/5V VIN = 2.6V to 6.6V, VOUT = 1.8V/3V/5V, IQ = 32μA, ISD < 1μA, SSOP-16 SIM Cards LTC1755/LTC1756 Smart Card Interface with Serial Control for 3V/5V Smart Card VIN = 2.7V to 7V, VOUT = 3V/5V, IQ = 60μA, ISD < 1μA, Applications SSOP-16, SSOP-24 LTC1955 Dual Smart Card Interface with Serial Control for 1.8V/3V/5V Smart Card Applications VIN = 3V to 6V, VOUT = 1.8V/3V, IQ = 200μA, ISD < 1μA, QFN-32 Package LTC1986 900kHz, SIM Power Supply for 3V/5V SIM Cards VIN = 2.6V to 4.4V, VOUT = 3V/5V, IQ = 14μA, ISD < 1μA, ThinSOT™ Package LTC3250-1.5 250mA,1.5MHz, High Efficiency Step-Down Charge Pump 85% Efficiency, VIN = 3.1V to 5.5V, VOUT = 1.5V, IQ = 35μA, ISD < 1μA, ThinSOT Package LTC3251 500mA,1MHz to 16MHz, Spread Spectrum, Step-Down Charge Pump 85% Efficiency, VIN = 3.1V to 5.5V, VOUT = 0.9V to 1.6V, IQ = 9μA, ISD < 1μA, MS Package ThinSOT is a trademark of Linear Technology Corporation. 4555fb 8 Linear Technology Corporation LT 0109 REV B • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2001