MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead(Pb)-Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous EBO IC 3 1 2 SOT-23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT6427 = 1V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — V V (BR)CBO 40 — V V (BR)EBO 12 — V I CES — 1.0 µA I CBO — 50 nA I EBO — 50 nA OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current (V CE = 25Vdc, I B = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw 1/5 21-Dec-07 MMBT6427 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 10,000 100,000 20,000 14,000 200,000 140,000 –– 1.2 –– 1.5 V BE(sat) –– 2.0 V V — 1.75 V C obo –– 7.0 pF C ibo –– 15 pF |h fe | 1.3 — V NF — 10 dB ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE –– (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) VCE(sat)(3) V BE(on) SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain–High Frequency (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) Noise Finure (V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz ) 3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0% NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 500 RS 200 IDEAL TRANSISTOR e n , VOLTAGE (nV) in en BANDWIDTH = 1.0 Hz ~0 R S~ 100 10 µA 50 100 µA 20 I C = 1.0 mA 10 5.0 10 Figure 1. Transistor Noise Model 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Noise Voltage WEITRON http://www.weitron.com.tw 2/5 21-Dec-07 MMBT6427 NOISE CHARACTERISTICS 2.0 V T , TOTAL WIDEBAND NOISE VOLTAGE (nV) (V CE = 5.0 Vdc, T A = 25°C) BANDWIDTH = 1.0 Hz i n , NOISE CURRENT (pA) 1.0 0.7 0.5 I C = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 0.02 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 200 BANDWIDTH = 10 Hz TO 15.7 kHz 100 I C = 10 µA 70 50 100 µA 30 20 1.0 mA 10 1.0 50 k 100 k 2.0 5.0 f, FREQUENCY (Hz) 20 50 100 200 500 1000 R S , SOURCE RESISTANCE (kΩ) Figure 3. Noise Current 14 10 Figure 4. Total Wideband Noise Voltage SMALL–SIGNAL CHARACTERISTICS BANDWIDTH = 10 Hz TO 15.7 kHz 20 10 8.0 100 µA 6.0 I C = 1.0 mA 4.0 2.0 0 1.0 2.0 5.0 10 20 50 T J = 25°C 10 10 µA 100 200 500 1000 C, CAPACITANCE (pF) NF, NOISE FIGURE (dB) 12 7.0 C ibo 5.0 C obo 3.0 2.0 0.04 0.1 R S , SOURCE RESISTANCE (kΩ) 4.0 10 20 40 SMALL–SIGNAL CHARACTERISTICS V CE = 5.0 V T J = 125°C 100 70 f = 100 MHz T J = 25°C h FE , DC CURRENT GAIN |h fe |, SMALL– SIGNAL CURRENT GAIN 2.0 200 1.0 0.8 0.6 0.4 0.2 1.0 Figure 6. Capacitance SMALL–SIGNAL CHARACTERISTICS 2.0 0.4 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Wideband Noise Figure 4.0 0.2 25°C 50 30 20 10 7.0 5.0 –55°C V CE = 5.0 V 3.0 2.0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 5.0 I C , COLLECTOR CURRENT (mA) http://www.weitron.com.tw 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain WEITRON 7.0 Figure 8. DC Current Gain 3/5 21-Dec-07 MMBT6427 V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) SMALL–SIGNAL CHARACTERISTICS 3.0 1.6 T J = 25°C 2.5 I C = 10 mA T J = 25°C 1.4 250 mA 500 mA V, VOLTAGE (VOLTS) 50 mA 2.0 1.5 1.0 0.5 V BE(sat) @ I C /I B = 1000 1.2 V BE(on) @ V CE = 5.0 V 1.0 0.8 V CE(sat) @ I C /I B = 1000 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5.0 500 1000 7.0 R θV , TEMPERATURE COEFFICIENTS (mV/°C) I B , BASE CURRENT (µA) 10 20 *APPLIES FOR I C / I B < h FE /3.0 70 100 200 300 500 Figure 10. “On” Voltages 25°C TO 125°C *R θVC FOR V CE(sat) –2.0 50 I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region –1.0 30 FIGURE A t –55°C TO 25°C P –3.0 PP PP 25°C TO 125°C –4.0 θ VB FOR V BE –5.0 –55°C TO 25°C t –6.0 5.0 7.0 10 20 30 50 70 100 200 300 1 1/f 500 DUTY CYCLE =t 1 f = t1 tP PEAK PULSE POWER = P P I C , COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients Design Note: Use of Transient Thermal Resistance Data 1.0 r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.05 SINGLE PULSE SINGLE PULSE 0.07 0.05 0.03 Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t) Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response WEITRON http://www.weitron.com.tw 4/5 21-Dec-07 MMBT6427 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M 5/5 21-Dec-07