PHILIPS PEMD30

PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 31 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
Philips
JEITA
PNP/PNP
complement
NPN/NPN
complement
PEMD30
SOT666
-
PEMB30
PEMH30
PUMD30
SOT363
SC-88
PUMB30
PUMH30
1.2 Features
n 100 mA output current capability
n Built-in bias resistors
n Simplifies circuit design
n Reduces component count
n Reduces pick and place costs
1.3 Applications
n Low current peripheral driver
n Control of IC inputs
n Cost-saving alternative for BC847BPN
and BC847BVN
n Switching loads
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
50
V
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
open base
IO
output current
-
-
100
mA
R1
bias resistor 1 (input)
1.54
2.2
2.86
kΩ
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
1
GND (emitter) TR1
2
input (base) TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
output (collector) TR1
6
5
4
Symbol
6
5
4
R1
TR2
TR1
1
2
3
R1
001aab555
1
2
3
006aaa269
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PEMD30
-
plastic surface-mounted package; 6 leads
SOT666
PUMD30
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PEMD30
2U
PUMD30
*B3
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
2 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
5
V
IO
output current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1]
-
200
mW
SOT666
[1][2]
-
200
mW
SOT363
[1]
-
300
mW
SOT666
[1][2]
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C
-
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
-
-
625
K/W
SOT666
[1][2]
-
-
625
K/W
SOT363
[1]
-
-
416
K/W
SOT666
[1][2]
-
-
416
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
3 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
-
-
1
µA
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 20 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
R1
bias resistor 1 (input)
1.54
2.2
2.86
kΩ
Cc
collector capacitance
TR1 (NPN)
-
-
2.5
pF
TR2 (PNP)
-
-
3
pF
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
4 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
006aaa696
500
006aaa697
1
hFE
(1)
400
VCEsat
(V)
(2)
300
10−1
(1)
(2)
(3)
(3)
200
100
0
10−1
1
102
10
10−2
10−1
1
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa691
500
102
10
IC (mA)
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa692
−1
hFE
(1)
400
VCEsat
(V)
300
(2)
−10−1
200
(1)
(2)
(3)
(3)
100
0
−10−1
−1
−10
−102
−10−2
−10−1
IC (mA)
−10
−102
IC (mA)
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
PEMD30_PUMD30_1
Product data sheet
−1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
5 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
8. Package outline
2.2
1.8
6
1.1
0.8
5
1.7
1.5
0.45
0.15
4
6
0.6
0.5
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7
1.5
pin 1
index
1.3
1.1
pin 1 index
1
2
3
1
0.25
0.10
0.3
0.2
0.65
2
3
0.18
0.08
0.27
0.17
0.5
1.3
1
Dimensions in mm
04-11-08
Fig 5. Package outline SOT363 (SC-88)
Dimensions in mm
04-11-08
Fig 6. Package outline SOT666
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
3000
4000
8000
10000
PEMD30
SOT666
-
-
-315
-
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
PUMD30
SOT363
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-
-165
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T2: reverse taping
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
6 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
2.65
0.60
(2×)
0.40 0.90 2.10
(2×)
2.35
solder paste
0.50
(4×)
solder lands
solder resist
0.50
(4×)
occupied area
1.20
2.40
MSA432
Dimensions in mm
Fig 7. Reflow soldering footprint SOT363 (SC-88)
5.25
0.30 1.00 4.00
4.50
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
Dimensions in mm
sot363
Fig 8. Wave soldering footprint SOT363 (SC-88)
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
7 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2.75
2.45
2.10
1.60
0.15
(4×)
0.40
(6×)
2.00 1.70 1.00
0.55
(2×)
0.30 (2×)
0.375
(4×)
1.20
2.20
2.50
solder lands
placement area
solder resist
occupied area
0.075
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOT666
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
8 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PEMD30_PUMD30_1
20060331
Product data sheet
-
-
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
9 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
PEMD30_PUMD30_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 31 March 2006
10 of 11
PEMD30; PUMD30
Philips Semiconductors
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].
Date of release: 31 March 2006
Document identifier: PEMD30_PUMD30_1