ONSEMI NUP4114UPXV6T1G

NUP4114UPXV6
Transient Voltage
Suppressors
Low Capacitance ESD Protection for
High Speed Data
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The NUP4114UPXV6 transient voltage suppressor is designed to
protect high speed data lines from ESD. Ultra−low capacitance and
high level of ESD protection makes this device well suited for use in
USB 2.0 applications.
6
Features
SOT−563
CASE 463A
•
•
•
•
•
•
•
Low Capacitance 0.8 pF
Low Clamping Voltage
Stand Off Voltage: 5 V
Low Leakage
Protection for the Following IEC Standards:
IEC 61000−4−2 Level 4 ESD Protection
UL Flammability Rating of 94 V−0
This is a Pb−Free Device
1
P4MG
G
PIN CONFIGURATION
AND SCHEMATIC
High Speed Communication Line Protection
USB 2.0 High Speed Data Line and Power Line Protection
Monitors and Flat Panel Displays
MP3
Gigabit Ethernet
Notebook Computers
Digital Video Interface (DVI) and HDMI
I/O 1
6 I/O
VN 2
5 VP
I/O 3
4 I/O
ORDERING INFORMATION
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
ESD
16000
400
13000
V
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact (ESD)
1
P4 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
•
•
•
•
•
•
•
MARKING
DIAGRAM
Device
Package
Shipping
NUP4114UPXV6T1G
SOT−563
(Pb−Free)
4000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
1
Publication Order Number:
NUP4114UPXV6/D
NUP4114UPXV6
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
VC VBR VRWM
Working Peak Reverse Voltage
IPP
Uni−Directional TVS
Max. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
VRWM
VBR
Conditions
Min
Typ
(Note 1)
IT = 1 mA, (Note 2)
Max
Unit
5.0
V
6.0
Reverse Leakage Current
IR
VRWM = 5 V
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins
Clamping Voltage
VC
@ IPP = 1 A (Note 4)
Clamping Voltage
VC
Per IEC 61000−4−2 (Note 5)
V
1.0
mA
0.8
1.0
pF
0.4
0.5
pF
11.2
V
Figures 1 and 2
V
1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. VBR is measured at pulse test current IT.
3. Nonrepetitive current pulse per Figure NO TAG (Pin 5 to Pin 2)
4. Surge current waveform per Figure 5.
5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
NUP4114UPXV6
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 5. 8 X 20 ms Pulse Waveform
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3
80
NUP4114UPXV6
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Figure 6. 500 MHz Data Pattern
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4
NUP4114UPXV6
APPLICATIONS INFORMATION
Option 2
The new NUP4114UPXV6 is a low capacitance TVS
diode array designed to protect sensitive electronics such as
communications systems, computers, and computer
peripherals against damage due to ESD events or transient
overvoltage conditions. Because of its low capacitance, it
can be used in high speed I/O data lines. The integrated
design of the NUP4114UPXV6 offers surge rated, low
capacitance steering diodes and a TVS diode integrated in
a single package (SOT−563). If a transient condition occurs,
the steering diodes will drive the transient to the positive rail
of the power supply or to ground. The TVS device protects
the power line against overvoltage conditions to avoid
damage to the power supply and any downstream
components.
Protection of four data lines with bias and power supply
isolation resistor.
I/O 1
I/O 2
VCC
1
6
2
5
3
4
10 k
I/O 3
I/O 4
NUP4114UPXV6 Configuration Options
The NUP4114UPXV6 can be isolated from the power
supply by connecting a series resistor between pin 5 and
VCC. A 10 kW resistor is recommended for this application.
This will maintain a bias on the internal TVS and steering
diodes, reducing their capacitance.
The NUP4114UPXV6 is able to protect up to four data
lines against transient overvoltage conditions by driving
them to a fixed reference point for clamping purposes. The
steering diodes will be forward biased whenever the voltage
on the protected line exceeds the reference voltage (Vf or
VCC + Vf). The diodes will force the transient current to
bypass the sensitive circuit.
Data lines are connected at pins 1, 3, 4 and 6. The negative
reference is connected at pin 2. This pin must be connected
directly to ground by using a ground plane to minimize the
PCB’s ground inductance. It is very important to reduce the
PCB trace lengths as much as possible to minimize parasitic
inductances.
Option 3
Protection of four data lines using the internal TVS diode
as reference.
I/O 1
I/O 2
1
6
2
5
3
4
Option 1
Protection of four data lines and the power supply using
VCC as reference.
I/O 1
I/O 2
NC
I/O 3
I/O 4
1
6
2
5
3
4
In applications lacking a positive supply reference or
those cases in which a fully isolated power supply is
required, the internal TVS can be used as the reference. For
these applications, pin 5 is not connected. In this
configuration, the steering diodes will conduct whenever the
voltage on the protected line exceeds the working voltage of
the TVS plus one diode drop (VC = Vf + VTVS).
VCC
I/O 3
I/O 4
ESD Protection of Power Supply Lines
When using diodes for data line protection, referencing to
a supply rail provides advantages. Biasing the diodes
reduces their capacitance and minimizes signal distortion.
Implementing this topology with discrete devices does have
disadvantages. This configuration is shown below:
For this configuration, connect pin 5 directly to the
positive supply rail (VCC), the data lines are referenced to
the supply voltage. The internal TVS diode prevents
overvoltage on the supply rail. Biasing of the steering diodes
reduces their capacitance.
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5
NUP4114UPXV6
Power
Supply
IESDpos
VCC
Protected Data Line
Device
Even with good board layout, some disadvantages are still
present when discrete diodes are used to suppress ESD
events across datalines and the supply rail. Discrete diodes
with good transient power capability will have larger die and
therefore higher capacitance. This capacitance becomes
problematic as transmission frequencies increase. Reducing
capacitance generally requires reducing die size. These
small die will have higher forward voltage characteristics at
typical ESD transient current levels. This voltage combined
with the smaller die can result in device failure.
The ON Semiconductor NUP4114UPXV6 was
developed to overcome the disadvantages encountered
when using discrete diodes for ESD protection. This device
integrates a TVS diode within a network of steering diodes.
D1
IESDpos
IESDneg
D2
IESDneg
VF + VCC
−VF
Looking at the figure above, it can be seen that when a
positive ESD condition occurs, diode D1 will be forward
biased while diode D2 will be forward biased when a
negative ESD condition occurs. For slower transient
conditions, this system may be approximated as follows:
For positive pulse conditions:
Vc = VCC + VfD1
For negative pulse conditions:
Vc = −VfD2
ESD events can have rise times on the order of some
number of nanoseconds. Under these conditions, the effect
of parasitic inductance must be considered. A pictorial
representation of this is shown below.
D1
D3
D5
D7
D2
D4
D6
D8
0
Power
Supply
Figure 7. NUP4114UPXV6 Equivalent Circuit
IESDpos
During an ESD condition, the ESD current will be driven
to ground through the TVS diode as shown below.
VCC
Protected
Device
D1
IESDpos
IESDneg
Power
Supply
Data Line
D2
VC = VCC + Vf + (L diESD/dt)
IESDneg
VCC
D1
Protected
Device
VC = −Vf − (L diESD/
dt)
An approximation of the clamping voltage for these fast
transients would be:
For positive pulse conditions:
Vc = VCC + Vf + (L diESD/dt)
For negative pulse conditions:
Vc = −Vf – (L diESD/dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also on the
L diESD/dt factor. A relatively small trace inductance can
result in hundreds of volts appearing on the supply rail. This
endangers both the power supply and anything attached to
that rail. This highlights the importance of good board
layout. Taking care to minimize the effects of parasitic
inductance will provide significant benefits in transient
immunity.
IESDpos
Data Line
D2
The resulting clamping voltage on the protected IC will
be:
Vc = VF + VTVS.
The clamping voltage of the TVS diode depends on the
magnitude of the ESD current. The steering diodes are fast
switching devices with unique forward voltage and low
capacitance characteristics.
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6
NUP4114UPXV6
TYPICAL APPLICATIONS
UPSTREAM
USB PORT
VBUS
VBUS
VBUS
VBUS
D+
RT
D+
RT
D−
VBUS
GND
USB
Controller
D−
VBUS
NUP4114UPXV6
CT CT
DOWNSTREAM
USB PORT
GND
VBUS
NUP2202W1
VBUS
RT
D+
RT
D−
GND
CT CT
DOWNSTREAM
USB PORT
Figure 8. ESD Protection for USB Port
RJ45
Connector
TX+
TX+
TX−
TX−
PHY
Ethernet
(10/100)
RX+
Coupling
Transformers
RX+
RX−
RX−
NUP4114UPXV6
VCC
GND
N/C
Figure 9. Protection for Ethernet (Differential mode)
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7
N/C
NUP4114UPXV6
R1
RTIP
R3
R2
RRING
T1
VCC
T1/E1
TRANCEIVER
NUP4114UPXV6
R4
TTIP
R5
TRING
T2
Figure 10. TI/E1 Interface Protection
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8
NUP4114UPXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
e
2
A
4
L
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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PUBLICATION ORDERING INFORMATION
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Sales Representative
NUP4114UPXV6/D