SD103A/103B/103C Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a Metal-on-silicon Schottky barrier device which is e2 protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. • These diodes are also available in the SOD123 and SOD323 case with type designations SD103AW(S)-V...SD103CW(S)-V, and in the MiniMELF case with type designations LL103A thru LL103C. • For general purpose applications • Lead (Pb)-free component • Component in accordance with RoHS2002/95/EC and WEEE 2002/96/EC Applications • • • • HF-Detector Protection circuit Small battery charger AC-DC/DC-DC converters 94 9367 Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks SD103A VR = 40 V SD103A-TR or SD103A-TAP SD103A Tape and Reel/Ammopack SD103B VR = 30 V SD103B-TR or SD103B-TAP SD103B Tape and Reel/Ammopack SD103C VR = 20 V SD103C-TR or SD103C-TAP SD103C Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Part Symbol Value Unit SD103A VR 40 V SD103B VR 30 V SD103C VR 20 V Power dissipation (infinite heatsink) Ptot 4001) mW Single cycle surge 60 Hz sine wave IFSM 15 A Peak inverse voltage 1) Test condition Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85754 Rev. 1.5, 28-Feb-07 www.vishay.com 1 SD103A/103B/103C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 3101) K/W Tj 1251) Thermal resistance junction to ambient air Junction temperature Tstg Storage temperature range 1) °C - 55 to + 150 1) °C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Breakdown Voltage IR = 50 µA Part Symbol Min SD103A V(BR) 40 Typ. Max Unit V SD103B V(BR) 30 V 20 SD103C V(BR) VR = 30 V SD103A IR 5 µA VR = 20 V SD103B IR 5 µA VR = 10 V SD103C IR 5 µA IF = 20 mA VF 370 mV IF = 200 mA VF 600 mV Diode capacitance VR = 0 V, f = 1 MHz CD 50 pF Reverse recovery time IF = IR = 50 to 200 mA, recover to 0.1 IR trr 10 ns Leakage current Forward voltage drop V Typical Characteristics Tamb = 25 °C, unless otherwise specified 5 100 IF - Forward Current (A) IF - Forward Current (mA) 1000 10 1 0.1 0.01 4 3 2 1 0 0.001 0.0 0 100 200 300 400 500 600 700 800 900 1000 16765 VF - Forward Voltage (mV) Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 16766 0.5 1.0 1.5 2.0 VF - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage Document Number 85754 Rev. 1.5, 28-Feb-07 SD103A/103B/103C Vishay Semiconductors 25 Itot - Typ. Non Repetitve Forward Surge Current (A) IR - Reverse Current (µA) 10 000 1000 100 10 1 20 15 10 5 0 0 20 40 16767 60 80 100 120 140 160 0.1 Tj - Junction Temperature (°C) 16769 Figure 3. Reverse Current vs. Junction Temperature 1.0 10.0 tP - Pulse width (ms) Figure 5. Typ. Non Repetitive Forward Surge Current vs. Pulse Width 30 CD - Diode Capacitance (pF) f = 1 MHz 25 20 15 10 5 0 0 10 5 15 20 25 30 VR - Reverse Voltage (V) 16768 Figure 4. Diode Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO35 3.9 max. (0.154) 26 min. (1.024) 1.5 (0.059) 26 min. (1.024) 1.7 (0.067) 0.55 max. (0.022) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85754 Rev. 1.5, 28-Feb-07 www.vishay.com 3 SD103A/103B/103C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85754 Rev. 1.5, 28-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1